A manufacturing method of a semiconductor apparatus includes preparing an intermediate member that includes a first member having a first substrate comprising a semiconductor element formed thereon, a second member having a second substrate, the second substrate including a part of a circuit electrically connected to the semiconductor element and having a linear expansion coefficient different from that of the first substrate, and a third member having a third substrate showing such a linear expansion coefficient that a difference between itself and the linear expansion coefficient of the first substrate is smaller than a difference between the linear expansion coefficients of the first substrate and the second substrate, and includes bonding the first member and the second member together. A first bonding electrode containing copper electrically connected to the semiconductor element and a second bonding electrode containing copper electrically connected to the circuit are bonded together.
Legal claims defining the scope of protection, as filed with the USPTO.
3. The manufacturing method of the semiconductor apparatus according to claim 1, wherein preparing the intermediate member includes bonding the second member and the third member at normal temperatures.
4. The manufacturing method of the semiconductor apparatus according to claim 3, wherein bonding at normal temperatures is performed using an ultraviolet-curing adhesive.
5. The manufacturing method of the semiconductor apparatus according to claim 4, wherein the ultraviolet-curing adhesive is light transmissive.
6. The manufacturing method of the semiconductor apparatus according to claim 1, further comprising thinning a surface of the second substrate bonded to the third member before heating the intermediate member, the surface being on an opposite side of a surface on which the third member is mounted.
7. The manufacturing method of the semiconductor apparatus according to claim 6, wherein a thickness of the second substrate after the thinning is smaller than a thickness of the first substrate.
8. The manufacturing method of the semiconductor apparatus according to claim 6, further comprising forming a through electrode in the second electrode after thinning of the surface of the second substrate on the opposite side of the surface on which the third member is mounted.
9. The manufacturing method of the semiconductor apparatus according to claim 1, wherein the semiconductor element is at least one of a light receiving element and a light emitting element.
10. The manufacturing method of the semiconductor apparatus according to claim 9, wherein the circuit is at least one of a readout circuit configured to read out a signal of the semiconductor element and a control circuit configured to control a potential to the semiconductor element.
11. The manufacturing method of the semiconductor apparatus according to claim 1, further comprising removing the third member after the bonding.
12. The manufacturing method of the semiconductor apparatus according to claim 1, wherein the first substrate contains a group III-V semiconductor.
15. The semiconductor apparatus according to claim 14, wherein the third member is light transmissive.
16. The semiconductor apparatus according to claim 15, wherein a light transmissive adhesive is arranged between the third member and the second substrate.
17. The semiconductor apparatus according to claim 16, wherein a thickness of the second substrate is smaller than a thickness of the first substrate.
19. The semiconductor apparatus according to claim 18, wherein the semiconductor element is at least one of a light receiving element and a light emitting element.
20. The semiconductor apparatus according to claim 19, wherein the semiconductor element contains a group III-V semiconductor.
21. The semiconductor apparatus according to claim 20, wherein the first bonding electrode and the second bonding electrode are composed of copper.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
August 25, 2020
September 13, 2022
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