A substrate processing gas of the present invention contains IF5; and IF7, in which a content of the IF5 is equal to or more than 1 ppm and equal to or less than 2% on a volume basis with respect to a total amount of the IF5 and the IF7.
Legal claims defining the scope of protection, as filed with the USPTO.
13. A storage container filled with the substrate processing gas according to claim 1.
14. The storage container according to claim 13, wherein the storage container is a metal container.
15. A substrate processing method comprising: dry-etching silicon without plasma, using the substrate processing gas according to claim 1.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
March 5, 2019
September 20, 2022
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