The present disclosure relates to an etching method including: a first step of forming an etching assistance layer on a surface of at least one of a plurality of silicon-containing regions by plasma of a processing gas generated in a processing container; and a second step of imparting energy to the etching assistance layer. The energy is equal to or greater than energy at which the etching assistance layer is removed, and smaller than energy at which a region located immediately below the etching assistance layer is sputtered, and a sequence including the first step and the second step is executed repeatedly.
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
2. The apparatus of claim 1, wherein the controller is further configured to cause repeating (a) and (b).
3. The apparatus of claim 1, wherein, in (b), the etching assistance layer is removed by imparting an energy at which a region located immediately below the etching assistance layer is not sputtered.
4. The apparatus of claim 1, wherein the first region of the workpiece has SiN and the second region has SiC.
This invention relates to semiconductor processing, specifically to an apparatus for handling workpieces with distinct material regions. The problem addressed is the difficulty in processing workpieces composed of different materials, such as silicon nitride (SiN) and silicon carbide (SiC), which require specialized handling due to their varying thermal, mechanical, and chemical properties. The apparatus is designed to accommodate these differences while ensuring precise processing. The apparatus includes a workpiece holder configured to support a workpiece with at least two distinct regions. The first region of the workpiece is made of silicon nitride (SiN), while the second region is made of silicon carbide (SiC). The apparatus is structured to manage the differences in material properties between these regions, such as thermal expansion coefficients, hardness, and chemical reactivity, to prevent damage during processing. This may involve localized heating, cooling, or mechanical support tailored to each material. The apparatus ensures that both regions are processed uniformly, maintaining structural integrity and performance. The design may also include sensors or feedback mechanisms to monitor and adjust processing conditions in real-time, ensuring consistency across the workpiece. This invention is particularly useful in semiconductor manufacturing, where multi-material substrates are increasingly common for advanced electronic and optoelectronic devices.
5. The apparatus of claim 1, wherein the first region of the workpiece has SiC and the second region has SiN.
6. The apparatus of claim 1, wherein, in (b), plasma is generated from an inert gas and an oxygen-containing gas.
8. The apparatus of claim 1, wherein, in (b), a halogen plasma is generated from a halogen gas for the etching.
9. The apparatus of claim 8, wherein the halogen gas is Cl2, HBr, NF3, CxHyFz, or CxFy (x, y, and z are natural number).
10. The apparatus of claim 1, wherein the second region of the workpiece has SiO2.
The invention relates to a semiconductor processing apparatus designed to modify the surface properties of a workpiece, particularly focusing on regions with different material compositions. The apparatus includes a first region of the workpiece that is treated to enhance its electrical or mechanical properties, while a second region of the workpiece contains silicon dioxide (SiO2). The apparatus is configured to selectively process these regions to achieve desired modifications, such as etching, deposition, or surface activation, without adversely affecting the SiO2-containing second region. This selective processing is crucial in semiconductor manufacturing, where different regions of a workpiece may require distinct treatments to ensure functionality and reliability. The apparatus may include a plasma source, a gas delivery system, or a thermal treatment module to facilitate the selective modification of the workpiece. The presence of SiO2 in the second region may serve as a protective layer or an insulating material, requiring specialized processing techniques to avoid damage or unintended reactions. The invention addresses challenges in semiconductor fabrication where precise control over material interactions is necessary to maintain performance and yield.
11. The apparatus of claim 10, wherein the first region of the workpiece has SiC and the second region of the workpiece has SiN or SiO2.
This invention relates to semiconductor processing, specifically to an apparatus for treating a workpiece with distinct material regions. The problem addressed is the need to selectively process different regions of a workpiece composed of dissimilar materials, such as silicon carbide (SiC) and silicon nitride (SiN) or silicon dioxide (SiO2), without damaging or contaminating the adjacent regions during treatment. The apparatus includes a workpiece holder configured to support a workpiece with at least a first region and a second region, where the first region contains SiC and the second region contains SiN or SiO2. The apparatus further includes a treatment module designed to apply a process to the first region while protecting the second region. This may involve etching, deposition, or other semiconductor fabrication steps. The treatment module may use directional energy beams, selective chemical processes, or masking techniques to ensure that only the intended region is modified. The workpiece holder may include alignment features to precisely position the workpiece, ensuring accurate treatment of the designated regions. The apparatus may also include monitoring systems to verify the integrity of the second region during processing. This selective treatment is critical for advanced semiconductor devices where different materials must be integrated without cross-contamination or degradation.
12. The apparatus of claim 10, wherein, in (b), an oxygen-containing gas is supplied.
This invention relates to an apparatus for processing materials, specifically for controlling the atmosphere during a thermal or chemical treatment process. The problem addressed is the need to precisely regulate the gas environment to achieve desired material properties, such as oxidation resistance, surface modification, or controlled chemical reactions. The apparatus includes a chamber for containing the material being processed and a gas supply system that introduces gases into the chamber. The gas supply system is configured to deliver an oxygen-containing gas, such as air, oxygen, or a mixture with other gases, to the chamber. The oxygen-containing gas may be used to create an oxidizing atmosphere, promote combustion, or facilitate controlled oxidation of the material. The apparatus may also include temperature control mechanisms, pressure regulation, and gas flow management to ensure uniform processing conditions. The oxygen-containing gas supply can be adjusted in flow rate, composition, or timing to achieve specific treatment effects. For example, it may be used to form oxide layers on metal surfaces, enhance combustion efficiency in thermal processes, or prevent unwanted reactions by balancing oxygen levels. The apparatus may further include sensors to monitor gas composition, temperature, or pressure, allowing for real-time adjustments to maintain optimal processing conditions. This invention is applicable in industries such as metallurgy, ceramics, chemical synthesis, and waste treatment, where precise atmospheric control is critical for material quality and process efficiency.
13. The apparatus of claim 12, wherein the oxygen-containing gas is O2, CO, COS, or CO2.
16. The apparatus of claim 15, wherein the process further comprising continuously performing the generating of the first plasma and the generating of the second plasma for a predetermined number of times while a vacuum state is maintained.
17. The apparatus of claim 15, wherein the first region of the workpiece has SiN and the second region of the workpiece has SiC.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
January 3, 2020
October 4, 2022
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.