A method includes forming integrated circuits on a front side of a first chip, performing a backside grinding on the first chip to reveal a plurality of through-vias in the first chip, and forming a first bridge structure on a backside of the first chip using a damascene process. The bridge structure has a first bond pad, a second bond pad, and a conductive trace electrically connecting the first bond pad to the second bond pad. The method further includes bonding a second chip and a third chip to the first chip through face-to-back bonding. A third bond pad of the second chip is bonded to the first bond pad of the first chip. A fourth bond pad of the third chip is bonded to the second bond pad of the first chip.
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2. The method of claim 1, wherein the forming the first bridge structure comprises a dual damascene process.
3. The method of claim 2, wherein a dual damascene structure formed by the dual damascene process comprises a via and the conductive trace over and joined with the via, and wherein the via is in physical contact with a through-via in the plurality of through-vias.
4. The method of claim 1, wherein the forming the first bridge structure comprises a single damascene process.
A method for fabricating semiconductor devices involves forming a first bridge structure using a single damascene process. The method addresses challenges in creating high-performance interconnects with improved electrical conductivity and reduced resistance in advanced semiconductor manufacturing. The single damascene process simplifies the fabrication by forming both the trench and via in a single etching step, followed by filling with conductive material. This approach reduces complexity compared to dual damascene processes, which require separate etching and filling steps for trenches and vias. The method ensures precise alignment and uniform deposition of conductive material, enhancing reliability and performance. The first bridge structure serves as an interconnect, facilitating signal transmission between different layers of the semiconductor device. The use of a single damascene process minimizes processing steps, lowers manufacturing costs, and improves yield. The method is particularly useful in high-density integrated circuits where efficient interconnects are critical for performance and power efficiency. The conductive material, such as copper or other low-resistance metals, is deposited into the etched features, forming a robust electrical pathway. The method may also include additional steps like barrier layer deposition to prevent diffusion and ensure long-term reliability. The resulting structure provides a scalable solution for advanced semiconductor nodes, supporting higher integration densities and faster data transmission.
8. The method of claim 1, wherein entireties of the second chip and the third chip overlap the first chip, and the first chip extends laterally beyond all edges of the second chip and the third chip.
10. The method of claim 9 further comprising packaging the package into an additional package.
12. The method of claim 11, wherein the additional bridge structure comprises a first via and a second via connected to through-vias in the second chip and the third chip, respectively.
14. The package of claim 13, wherein the bridge structure further comprises a first via in physical contact with a first through-via of the plurality of through-vias.
15. The package of claim 14, wherein the bridge structure further comprises a second via in physical contact with a second through-via of the plurality of through-vias.
16. The package of claim 13, wherein each of the plurality of through-vias penetrates through the semiconductor substrate.
A semiconductor package includes a semiconductor substrate with a plurality of through-vias that penetrate entirely through the substrate. These through-vias provide electrical connections between the front and back sides of the substrate, enabling vertical signal routing and reducing the need for additional wiring layers. The package may also include a redistribution layer (RDL) on the front side of the substrate, which redistributes electrical signals from the through-vias to other components or external connections. The back side of the substrate may have a backside RDL or other interconnect structures to further route signals or connect to external devices. The through-vias are typically filled with conductive material, such as copper, and may be lined with an insulating barrier to prevent short circuits with the substrate. This configuration improves signal integrity, reduces package size, and enhances thermal dissipation by providing direct vertical pathways for heat transfer. The package may be used in high-performance applications where compact size and efficient signal routing are critical, such as in advanced integrated circuits, system-in-package (SiP) modules, or high-density interconnect (HDI) designs. The through-vias may be formed using processes like laser drilling, etching, or mechanical drilling, followed by plating or deposition of conductive material. The package may also include additional features like solder bumps, underfill material, or thermal interface materials to enhance reliability and performance.
18. The package of claim 17 comprising a power supplying path, wherein the power supplying path comprises the through-via, a second interconnect structure of the second chip, the bridge structure, and a third interconnect structure of the third chip.
19. The package of claim 17, wherein the first chip comprises a dual damascene structure on the backside of the semiconductor substrate, and wherein the dual damascene structure comprises a via, and the via is in physical contact with the through-via.
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October 22, 2020
October 4, 2022
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