A reinforced thin-film device (100, 200, 500) including a substrate (101) having a top surface for supporting an epilayer; a mask layer (103) patterned with a plurality of nanosize cavities (102, 102′) disposed on said substrate (101) to form a needle pad; a thin-film (105) of lattice-mismatched semiconductor disposed on said mask layer (103), wherein said thin-film (105) comprises a plurality of in parallel spaced semiconductor needles (104, 204) of said lattice-mismatched semiconductor embedded in said thin-film (105), wherein said plurality of semiconductor needles (104, 204) are substantially vertically disposed in the axial direction toward said substrate (101) in said plurality of nanosize cavities (102, 102′) of said mask layer (103), and where a lattice-mismatched semiconductor epilayer (106) is provided on said thin-film supported thereby.
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2. The reinforced thin-film device according to claim 1, wherein said plurality of in parallel spaced semiconductor needles of lattice-mismatched semiconductor are arranged in a close-packed structure, wherein said close-packed structure is a hexagonal pattern; and each individual semiconductor needle is disposed at a distance of 50-100 nm from each plurality of semiconductor needles.
This invention relates to a reinforced thin-film device incorporating a plurality of semiconductor needles arranged in a close-packed hexagonal pattern. The device addresses challenges in semiconductor integration, particularly those arising from lattice mismatch between different semiconductor materials, which can lead to defects and reduced performance. The close-packed hexagonal arrangement of semiconductor needles, spaced 50-100 nm apart, enhances structural stability and electrical properties by minimizing lattice mismatch-induced strain. Each needle is composed of lattice-mismatched semiconductor materials, allowing for tailored electronic and optical properties while maintaining mechanical integrity. The hexagonal pattern optimizes packing density, improving thermal and electrical conductivity while reducing defect formation. This configuration is particularly useful in high-performance electronic, optoelectronic, and photonic applications where material compatibility and structural reinforcement are critical. The reinforced structure ensures reliable operation under varying thermal and mechanical conditions, making it suitable for advanced semiconductor devices.
3. The reinforced thin-film device according to claim 1, wherein said plurality of nanosize cavities are nanosize holes configured with a hole diameter of 5-25 nm to provide said semiconductor needles of the same thickness in said nanosize holes.
4. The reinforced thin-film device according to claim 1, wherein said thin-film is germanium and said epilayer is graphene.
5. The reinforced thin-film device of claim 1, wherein said epilayer comprises semiconductor fins of the same semiconductor material as said epilayer.
6. The reinforced thin-film device according to claim 1, wherein said plurality of islands is positioned at a distance of 200-500 nm to each other.
7. The reinforced thin-film device according to claim 1, wherein said epilayer comprises at least one heterostructure of III-V semiconductor alloy with different bandgaps having a 1-10 nm thin middle layer, said middle layer having a smaller band gap than abutting semiconductor in said heterostructure.
8. The reinforced thin-film device of claim 7, wherein the heterostructure comprises Ill-nitride nanowires having a light emitting diode (LED), and a structure of GaN core/AlGaN shell/GaN barrier shell/InGaN active layer shell/GaN barrier shell/GaN shell, and where the INGaN active layer shell acts as the middle layer.
9. The reinforced thin-film device of claim 1, wherein said semiconductor needles have at least a portion which is wurtzite crystal structure.
The invention relates to reinforced thin-film devices incorporating semiconductor needles, particularly those with a wurtzite crystal structure. Thin-film devices, such as solar cells or light-emitting diodes, often suffer from mechanical fragility and performance limitations due to defects in their semiconductor materials. The invention addresses these issues by integrating semiconductor needles into the thin-film structure, where at least a portion of these needles exhibit a wurtzite crystal structure. Wurtzite is a hexagonal crystal lattice known for its stability and favorable electronic properties, enhancing the device's durability and efficiency. The semiconductor needles provide mechanical reinforcement, reducing cracking or delamination in the thin-film layers. Additionally, the wurtzite structure improves charge carrier mobility and optical properties, leading to better device performance. The needles can be embedded within the thin-film layers or positioned at interfaces to optimize structural and electronic integration. This approach is particularly useful in flexible or large-area thin-film applications where mechanical robustness and high efficiency are critical. The invention may also include additional features such as specific needle dimensions, doping profiles, or interface modifications to further enhance device properties.
10. The reinforced thin-film device of claim 1, wherein said substrate is a silicon wafer.
11. The reinforced thin-film device of claim 1, wherein the lattice-mismatched semiconductor epilayer and the thin-film of lattice-mismatched semiconductor are of the same semiconductor material which is intentionally mismatched relative to the substrate.
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April 23, 2019
October 11, 2022
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