A reinforced thin-film device (100, 200, 500) including a substrate (101) having a top surface for supporting an epilayer; a mask layer (103) patterned with a plurality of nanosize cavities (102, 102′) disposed on said substrate (101) to form a needle pad; a thin-film (105) of lattice-mismatched semiconductor disposed on said mask layer (103), wherein said thin-film (105) comprises a plurality of in parallel spaced semiconductor needles (104, 204) of said lattice-mismatched semiconductor embedded in said thin-film (105), wherein said plurality of semiconductor needles (104, 204) are substantially vertically disposed in the axial direction toward said substrate (101) in said plurality of nanosize cavities (102, 102′) of said mask layer (103), and where a lattice-mismatched semiconductor epilayer (106) is provided on said thin-film supported thereby.
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2. The reinforced thin-film device according to claim 1, wherein said plurality of in parallel spaced semiconductor needles of lattice-mismatched semiconductor are arranged in a close-packed structure, wherein said close-packed structure is a hexagonal pattern; and each individual semiconductor needle is disposed at a distance of 50-100 nm from each plurality of semiconductor needles.
3. The reinforced thin-film device according to claim 1, wherein said plurality of nanosize cavities are nanosize holes configured with a hole diameter of 5-25 nm to provide said semiconductor needles of the same thickness in said nanosize holes.
4. The reinforced thin-film device according to claim 1, wherein said thin-film is germanium and said epilayer is graphene.
5. The reinforced thin-film device of claim 1, wherein said epilayer comprises semiconductor fins of the same semiconductor material as said epilayer.
6. The reinforced thin-film device according to claim 1, wherein said plurality of islands is positioned at a distance of 200-500 nm to each other.
7. The reinforced thin-film device according to claim 1, wherein said epilayer comprises at least one heterostructure of III-V semiconductor alloy with different bandgaps having a 1-10 nm thin middle layer, said middle layer having a smaller band gap than abutting semiconductor in said heterostructure.
8. The reinforced thin-film device of claim 7, wherein the heterostructure comprises Ill-nitride nanowires having a light emitting diode (LED), and a structure of GaN core/AlGaN shell/GaN barrier shell/InGaN active layer shell/GaN barrier shell/GaN shell, and where the INGaN active layer shell acts as the middle layer.
9. The reinforced thin-film device of claim 1, wherein said semiconductor needles have at least a portion which is wurtzite crystal structure.
10. The reinforced thin-film device of claim 1, wherein said substrate is a silicon wafer.
11. The reinforced thin-film device of claim 1, wherein the lattice-mismatched semiconductor epilayer and the thin-film of lattice-mismatched semiconductor are of the same semiconductor material which is intentionally mismatched relative to the substrate.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
April 23, 2019
October 11, 2022
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