Semiconductor devices and methods of forming the same are provided. The methods may include forming a stacked structure that may include a stacking area and a stepped area and may include first layers and second layers alternately stacked. The second layers may have a stepped shape in the stepped area, and the stepped area may include at least one flat area and at least one inclined stepped area. The methods may also include forming a capping insulating layer covering the stacked structure. The capping insulating layer may include a first capping region having a first upper surface and a second capping region having a second upper surface at a lower level than the first upper surface. The methods may further include patterning the capping insulating layer to form protrusions at least one of which overlaps the stepped area and then planarizing the capping insulating layer.
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2. The method of claim 1, further comprising, after forming the partially etched capping insulating layer, prior to the annealing process, removing the planarization stop layer to expose the uppermost layer of the stacked structure.
3. The method of claim 1, wherein the stepped area of the stacked structure comprises at least one flat area and at least one inclined stepped area adjacent to the at least one flat area.
4. The method of claim 3, wherein one of the plurality of protrusions overlaps the at least one inclined step area.
A method for manufacturing a semiconductor device involves forming a plurality of protrusions on a substrate, where at least one of these protrusions overlaps an inclined step area. The inclined step area is a region where the substrate surface transitions at an angle, such as a slope or edge. The protrusions are typically formed using a patterning process, such as lithography, to create raised structures on the substrate. The overlapping protrusion may serve to improve electrical connectivity, mechanical stability, or alignment in the device. This method is particularly useful in semiconductor fabrication where precise control over feature placement is critical, such as in memory devices, transistors, or interconnect structures. The overlapping protrusion ensures proper alignment and functionality in areas where the substrate surface is not uniform, addressing challenges in maintaining consistent performance across varying topography. The technique may also involve additional steps like etching, deposition, or planarization to refine the protrusions and step areas. The method enhances device reliability and performance by ensuring that critical features remain properly positioned even in complex topographical regions.
5. The method of claim 1, wherein at least a portion of each of the plurality of protrusions is removed during planarizing the capping insulating layer.
This invention relates to semiconductor fabrication, specifically to a method for planarizing a capping insulating layer in a semiconductor device. The problem addressed is ensuring uniform planarization of the capping insulating layer while maintaining structural integrity of underlying features. The method involves forming a plurality of protrusions on a substrate, depositing a capping insulating layer over the protrusions, and planarizing the capping insulating layer. During planarization, at least a portion of each protrusion is removed to achieve a flat surface. The protrusions may be formed by etching or other patterning techniques and can be made of the same or different material as the substrate. The planarization process may include chemical-mechanical polishing (CMP) or other planarization techniques. The removal of protrusion portions ensures that the capping insulating layer is uniformly planarized without damaging underlying structures. This method is particularly useful in advanced semiconductor manufacturing where precise planarization is critical for device performance and reliability. The invention improves yield and reduces defects by controlling the planarization process more effectively.
7. The method of claim 6, wherein the first height is less than a thickness of each of the plurality of second layers.
9. The method of claim 1, wherein the partially etched capping insulating layer includes an upper surface at a level between a lower surface of the planarization stop layer and an upper surface of the planarization stop layer.
10. The method of claim 1, wherein a volume of the partially etched capping insulating layer is reduced by performing the annealing process.
This invention relates to semiconductor fabrication, specifically to a method for reducing the volume of a partially etched capping insulating layer through an annealing process. The capping insulating layer is typically used to protect underlying structures during etching processes in integrated circuit manufacturing. A common issue in semiconductor fabrication is the formation of residual material or unwanted thickness in the capping insulating layer after partial etching, which can lead to defects or performance issues in the final device. The method involves performing an annealing process on the partially etched capping insulating layer to reduce its volume. Annealing is a thermal treatment that can alter material properties, such as density or stress, which in this case leads to a reduction in the layer's volume. This reduction helps to eliminate excess material that may have remained after partial etching, ensuring better uniformity and reliability in the final semiconductor structure. The annealing process may be performed at controlled temperatures and durations to achieve the desired volume reduction without damaging the underlying layers or other components. This technique is particularly useful in advanced semiconductor manufacturing where precise control over material properties is critical.
11. The method of claim 1, wherein the annealing process is performed for 30 minutes to 2 hours at a temperature of 500° C. to 850° C.
12. The method of claim 1, wherein patterning the capping insulating layer includes sequentially performing a plurality of etching processes on the capping insulating layer, and each of the plurality of protrusions is formed by performing a respective one of the plurality of etching processes.
15. The method of claim 14, further comprising, after planarizing the first capping insulating layer, performing a first annealing process to increase a density of the first capping insulating layer by reducing a volume of the first capping insulating layer.
17. The method of claim 16, further comprising, after planarizing the second capping insulating layer, performing a second annealing process to increase a density of the second capping insulating layer by reducing a volume of the second capping insulating layer.
18. The method of claim 16, further comprising forming a vertical memory structure extending through the second stacked structure and the first stacked structure after planarizing the second capping insulating layer.
The invention relates to semiconductor memory devices, specifically to methods for fabricating three-dimensional (3D) memory structures, such as those used in NAND flash memory. The problem addressed is the integration of vertical memory structures within stacked layers of a semiconductor device, ensuring proper alignment and electrical isolation during fabrication. The method involves forming a first stacked structure comprising alternating conductive and insulating layers, followed by a second stacked structure also comprising alternating conductive and insulating layers. A second capping insulating layer is deposited over the second stacked structure and then planarized to expose an upper surface. After planarization, a vertical memory structure is formed, extending through both the second and first stacked structures. This vertical structure may include memory elements such as charge-trap layers or floating gates, and is electrically isolated from the surrounding layers. The process ensures precise alignment and proper electrical insulation, enabling high-density memory integration. The method is particularly useful in advanced semiconductor manufacturing for 3D NAND flash memory devices, where vertical stacking of memory cells is critical for increasing storage capacity while minimizing footprint.
20. The method of claim 19, wherein at least one of the plurality of protrusions comprises opposing sides that have different inclinations, and a first side of the opposing sides that is closer to the stacking area is steeper than a second side opposite to the first side.
This invention relates to a system for stacking objects, particularly addressing the challenge of securely and efficiently arranging items in a stacked configuration. The system includes a stacking area where objects are placed and a plurality of protrusions positioned around the stacking area to guide and stabilize the objects during stacking. The protrusions are designed to prevent misalignment and ensure proper positioning of the objects as they are stacked. At least one of the protrusions has opposing sides with different inclinations, where the side closer to the stacking area is steeper than the opposite side. This asymmetrical design helps to guide objects into the correct position while allowing easier removal or adjustment if needed. The protrusions may be adjustable or fixed, depending on the application, and can be integrated into a larger apparatus or used as a standalone component. The system is particularly useful in automated or semi-automated stacking processes where precision and stability are critical. The invention improves upon existing stacking methods by reducing the risk of misalignment and enhancing the structural integrity of the stacked arrangement.
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September 29, 2020
October 25, 2022
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