Cubic BAs is used in semiconductors to improve the thermal characteristics of a device. The BAs is used in device layers to improve thermal conductivity. The BAs also provides thermal expansion characteristics that are compatible with other semiconductors and thereby further improves reliability. The substrates of the semiconductors may also include vias that contain BAs. The BAs in the vias may contact the BAs in the device layers. Some vias may have a surface area to volume ratio of greater than 10 to better assist with device heat dissipation.
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2. The device of claim 1, wherein the cubic BAs electrically insulating layer removes heat from both the device channel layer and the device buffer layer.
3. The device of claim 1, wherein the cubic BAs electrically insulating layer spreads heat throughout the cubic BAs electrically insulating layer.
5. The device of claim 4, further comprising a second cubic BAs electrically insulating layer on top of the device channel layer.
6. The device of claim 4, wherein the cubic BAs in the at least one via fills the at least one via.
This invention relates to semiconductor devices, specifically to the formation of conductive vias in integrated circuits. The problem addressed is the efficient and reliable filling of vias with conductive material to ensure electrical connectivity between different layers of a semiconductor device. Traditional via filling methods often result in voids or incomplete filling, which can degrade device performance or cause failures. The invention describes a semiconductor device with at least one via filled with cubic boron arsenide (BAs) material. The cubic BAs in the via completely fills the via, ensuring no voids or gaps that could disrupt electrical conductivity. The via is formed in a dielectric layer, and the cubic BAs provides high thermal and electrical conductivity, improving the overall performance of the semiconductor device. The cubic BAs material is deposited in a manner that ensures uniform and complete filling of the via, addressing the challenges of traditional via filling techniques. The invention may also include additional layers or structures, such as conductive interconnects or insulating layers, to further enhance device functionality. The use of cubic BAs in vias is particularly advantageous due to its superior thermal and electrical properties compared to conventional materials like copper or tungsten. This ensures reliable electrical connections and improved heat dissipation in advanced semiconductor devices.
7. The device of claim 4, wherein the bottom surface of the substrate has a BAs layer.
The invention relates to a semiconductor device with an improved substrate structure for enhanced electrical performance and reliability. The device addresses challenges in semiconductor fabrication, particularly in managing thermal and electrical properties at the substrate level. The substrate includes a bottom surface with a boron arsenide (BAs) layer, which provides superior thermal conductivity and electrical insulation compared to traditional materials. This BAs layer is integrated into the substrate to dissipate heat efficiently while maintaining electrical isolation between components. The substrate may also include additional layers, such as a semiconductor layer for active device fabrication and an insulating layer to support the BAs layer. The BAs layer's high thermal conductivity ensures effective heat spreading, reducing thermal resistance and preventing overheating in high-power applications. The insulating properties of the BAs layer prevent unwanted electrical leakage, improving device reliability. This design is particularly useful in high-performance electronics, power devices, and integrated circuits where thermal management and electrical isolation are critical. The BAs layer's integration into the substrate structure enhances overall device performance by optimizing heat dissipation and electrical insulation.
8. The device of claim 4, wherein the BAs layer on the bottom surface of the substrate contacts the BAs in the at least one via.
9. The device of claim 4, wherein in the at least on via has a surface to volume ratio of greater than 10.
10. The device of claim 3, further comprising a cubic BAs layer on top of the device channel layer.
A semiconductor device includes a channel layer for conducting current and a cubic boron arsenide (BAs) layer positioned on top of the channel layer. The cubic BAs layer enhances thermal conductivity and electrical performance by efficiently dissipating heat generated during device operation. The channel layer is designed to support charge carrier transport, while the cubic BAs layer provides superior thermal management properties compared to traditional materials like silicon or gallium arsenide. This combination improves device efficiency and reliability, particularly in high-power or high-frequency applications where heat dissipation is critical. The cubic BAs layer may be integrated into various semiconductor structures, including transistors, diodes, or other electronic components, to mitigate thermal bottlenecks and enhance overall performance. The device leverages the high thermal conductivity of cubic BAs to maintain stable operating temperatures, reducing thermal resistance and improving longevity. This innovation addresses challenges in thermal management for advanced semiconductor devices, enabling higher power densities and faster switching speeds without compromising reliability.
11. The device of claim 4, wherein the cubic BAs electrically insulating layer removes heat from both the device buffer layer and the device channel layer.
A thermal management system for electronic devices addresses the problem of heat dissipation in high-performance semiconductor components. The system includes a cubic boron arsenide (cubic BAs) electrically insulating layer that efficiently conducts heat away from critical device layers. This layer is integrated between a device buffer layer and a device channel layer, both of which generate heat during operation. The cubic BAs layer ensures thermal conductivity while maintaining electrical insulation, preventing short circuits or interference. The buffer layer provides structural support and electrical isolation for the channel layer, which is the primary conductive path for device operation. By removing heat from both the buffer and channel layers, the cubic BAs layer enhances device reliability and performance, particularly in applications requiring high thermal efficiency. The system is designed for semiconductor devices where thermal management is critical, such as power electronics, high-frequency circuits, and advanced computing components. The use of cubic BAs leverages its superior thermal conductivity properties while maintaining electrical insulation, addressing a key challenge in modern electronics where heat dissipation is a limiting factor.
13. The device of claim 12, wherein the first layer is the cubic BAs layer.
A device for electronic or optoelectronic applications includes a layered structure with a cubic BAs (boron arsenide) layer as the first layer. The cubic BAs layer is characterized by its high thermal conductivity and electronic properties, making it suitable for heat dissipation and charge transport in semiconductor devices. The device may include additional layers, such as a second layer composed of a different material, to enhance functionality. The cubic BAs layer is deposited or grown on a substrate, ensuring structural stability and compatibility with other semiconductor materials. The device may be used in high-performance electronics, power devices, or optoelectronic systems where efficient heat management and charge transport are critical. The cubic BAs layer's cubic crystal structure ensures optimal thermal and electronic performance, addressing challenges in thermal management and device efficiency in advanced semiconductor applications. The device leverages the unique properties of cubic BAs to improve overall performance and reliability in electronic and optoelectronic systems.
14. The device of claim 12, wherein the second layer is the cubic BAs layer.
15. The device of claim 12, wherein both the first layer and the second layer are cubic BAs layers.
The invention relates to a layered device structure utilizing cubic boron arsenide (BA) layers to address thermal management challenges in electronic and optoelectronic systems. Traditional materials like silicon and gallium arsenide suffer from high thermal resistance, limiting performance in high-power applications. Cubic BA is a promising alternative due to its exceptional thermal conductivity and electronic properties, but integrating it into functional devices remains challenging. The device comprises a first cubic BA layer and a second cubic BA layer, each contributing to heat dissipation and charge carrier transport. The layers are arranged to form a heterostructure, where the cubic crystal structure ensures efficient thermal and electronic coupling between them. This configuration enhances heat spreading and reduces thermal gradients, improving device reliability and performance. The use of cubic BA in both layers ensures compatibility and minimizes interfacial resistance, enabling efficient heat transfer and charge transport across the structure. The device may be part of a larger system, such as a transistor, sensor, or energy conversion module, where thermal management is critical. The invention addresses the need for high-performance materials in advanced electronics by leveraging the unique properties of cubic BA to overcome thermal bottlenecks.
16. The device of claim 12, further comprising a cubic BAs electrically insulating layer in contact with the first layer, the second layer, the third layer and the fourth layer.
This invention relates to a layered electronic device structure designed to improve electrical insulation and structural integrity. The device includes a first layer, a second layer, a third layer, and a fourth layer, each serving distinct functional roles. The first layer is a conductive layer, the second layer is a semiconductor layer, the third layer is a dielectric layer, and the fourth layer is a protective layer. These layers are arranged in a stacked configuration to form a functional electronic component, such as a transistor or sensor. The problem addressed is the need for reliable electrical insulation between conductive and semiconductor layers while maintaining structural stability. The invention introduces a cubic boron arsenide (BAs) electrically insulating layer that interfaces with all four existing layers. The BAs layer provides superior thermal conductivity and electrical insulation, reducing heat buildup and preventing short circuits. This enhancement ensures long-term reliability and performance in high-power or high-frequency applications. The BAs layer is integrated into the device without disrupting the existing layer functions, making it suitable for advanced semiconductor and microelectronic devices. The solution is particularly valuable in applications requiring high thermal management and electrical isolation, such as power electronics and integrated circuits.
17. The device of claim 16, wherein the first layer is the cubic BAs layer.
A device for electronic or optoelectronic applications includes a layered structure with a first layer composed of cubic boron arsenide (BAs). The cubic BAs layer is designed to exhibit high thermal conductivity and electrical properties, making it suitable for heat dissipation or charge transport in semiconductor devices. The device may incorporate additional layers, such as a second layer with a different material or composition, to enhance functionality. The cubic BAs layer is integrated into the device to improve performance in applications requiring efficient heat management or electrical conductivity, such as transistors, sensors, or energy conversion systems. The structure may also include interfaces or interfaces between layers to optimize material compatibility and device efficiency. The cubic BAs layer's properties are leveraged to address challenges in thermal management and electrical performance in advanced electronic and optoelectronic systems.
18. The device of claim 16, wherein the second layer is the cubic BAs layer.
19. The device of claim 16, wherein both the first and second layers are cubic BAs layers.
20. The device of claim 12, wherein the cubic BAs layer removes heat from both the third layer and the fourth layer.
A thermal management system for electronic devices includes a cubic boron arsenide (BAs) layer integrated into a multi-layered structure to enhance heat dissipation. The system addresses the challenge of efficiently removing heat from high-power electronic components, particularly in densely packed or high-performance devices where traditional cooling methods are insufficient. The cubic BAs layer is positioned between a third layer and a fourth layer, where the third layer may be a heat-generating electronic component or a heat spreader, and the fourth layer may be another heat-generating component, a substrate, or a secondary cooling mechanism. The cubic BAs layer is designed with high thermal conductivity to facilitate bidirectional heat transfer, removing heat from both the third and fourth layers simultaneously. This configuration ensures uniform heat dissipation and prevents localized overheating, improving the overall thermal performance and reliability of the electronic device. The system may also include additional layers, such as thermal interface materials or insulating layers, to optimize heat flow and electrical isolation. The cubic BAs layer's superior thermal properties enable efficient heat conduction away from critical components, extending the lifespan and operational efficiency of the device.
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August 8, 2017
November 1, 2022
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