Cubic BAs is used in semiconductors to improve the thermal characteristics of a device. The BAs is used in device layers to improve thermal conductivity. The BAs also provides thermal expansion characteristics that are compatible with other semiconductors and thereby further improves reliability. The substrates of the semiconductors may also include vias that contain BAs. The BAs in the vias may contact the BAs in the device layers. Some vias may have a surface area to volume ratio of greater than 10 to better assist with device heat dissipation.
Legal claims defining the scope of protection, as filed with the USPTO.
2. The device of claim 1, wherein the cubic BAs electrically insulating layer removes heat from both the device channel layer and the device buffer layer.
3. The device of claim 1, wherein the cubic BAs electrically insulating layer spreads heat throughout the cubic BAs electrically insulating layer.
5. The device of claim 4, further comprising a second cubic BAs electrically insulating layer on top of the device channel layer.
6. The device of claim 4, wherein the cubic BAs in the at least one via fills the at least one via.
7. The device of claim 4, wherein the bottom surface of the substrate has a BAs layer.
8. The device of claim 4, wherein the BAs layer on the bottom surface of the substrate contacts the BAs in the at least one via.
9. The device of claim 4, wherein in the at least on via has a surface to volume ratio of greater than 10.
10. The device of claim 3, further comprising a cubic BAs layer on top of the device channel layer.
11. The device of claim 4, wherein the cubic BAs electrically insulating layer removes heat from both the device buffer layer and the device channel layer.
13. The device of claim 12, wherein the first layer is the cubic BAs layer.
14. The device of claim 12, wherein the second layer is the cubic BAs layer.
15. The device of claim 12, wherein both the first layer and the second layer are cubic BAs layers.
16. The device of claim 12, further comprising a cubic BAs electrically insulating layer in contact with the first layer, the second layer, the third layer and the fourth layer.
17. The device of claim 16, wherein the first layer is the cubic BAs layer.
18. The device of claim 16, wherein the second layer is the cubic BAs layer.
19. The device of claim 16, wherein both the first and second layers are cubic BAs layers.
20. The device of claim 12, wherein the cubic BAs layer removes heat from both the third layer and the fourth layer.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
August 8, 2017
November 1, 2022
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