A testing device comprises test interface circuitry, probe circuitry, and initiate state machine circuitry. The test interface circuitry is configured to receive NAND signaling when operatively coupled to a M-NAND memory device under test and to operate the M-NAND memory device under test to receive memory access requests and to provide status or data at the same rate it receives memory access requests. The probe circuitry is configured to detect memory operations of the memory device under test. The finite state machine circuitry is operatively coupled to the probe circuitry and is configured to advance through multiple circuit states according to the detected memory operations; and log memory events of the memory device under test according to the circuit states.
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4. The testing device of claim 3, including processing circuitry and a display, wherein the processing circuitry is configured to display a distribution of types of memory operations performed in a physical address space.
9. The testing device of claim 8, wherein the electronic system is a mobile phone system.
12. The method of claim 11, wherein the logging memory events includes logging a physical memory address accessed in association with a detected memory operation.
13. The method of claim 12, including displaying a distribution of types of memory operations performed in a physical address space.
17. The method of claim 10, wherein operating a M-NAND memory device under test includes operating a universal flash storage (UFS) device embedded in an electronic system to receive memory access requests from the electronic system and to provide one or both of status and data to the electronic system at the same rate it receives memory access requests.
18. The method of claim 10, wherein operating a M-NAND memory device under test includes operating a universal flash storage (UFS) device or an embedded MultiMediaCard (eMMC) in a mobile phone system.
21. The non-transitory computer readable storage medium of claim 20, further including instructions configured to cause the processing circuitry of the testing device to display a distribution of types of memory operations according to physical address space.
25. The non-transitory computer readable storage medium of claim 19, further including instructions configured to cause the processing circuitry of the M-NAND testing device to operate a universal flash storage (UFS) device embedded in a mobile phone system as the M-NAND memory device under test.
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June 26, 2019
November 8, 2022
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