An image sensor is provided. The image sensor includes a pixel array including first and second pixels, the first and second pixels receiving the same transfer gate signal and outputting first and second signal voltages, respectively, a transfer gate driver receiving first and second voltages and generating the transfer gate signal, the transfer gate signal having the first voltage as its maximum voltage and having the second voltage as its minimum voltage and a compensation module detecting a variation in the second voltage, generating a compensation voltage based on the variation in the second voltage, and performing a compensation operation.
Legal claims defining the scope of protection, as filed with the USPTO.
7. The image sensing device of claim 6, wherein the compensation module generates the compensated ramp signal based on a variation of transconductances of each the first bias transistor, the second bias transistor and the second bias PMOS transistor.
9. The image sensing device of claim 8, wherein the compensation module generates the compensated ramp signal based on variations of transconductances of each the first bias NMOS transistor, the first bias PMOS transistor and the third bias PMOS transistor.
17. The operating method of claim 16, wherein the first bias transistor and the first NMOS transistor are enabled the amplified negative supply voltage.
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July 29, 2020
November 15, 2022
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