A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.
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2. The method of claim 1, wherein ruthenium and copper are removed from the semiconductor device at a selectivity ratio of ruthenium to copper that is greater than 2.5.
This invention relates to a method for selectively removing ruthenium and copper from semiconductor devices, addressing the challenge of efficiently separating these metals during fabrication or recycling processes. The method achieves a high selectivity ratio of ruthenium to copper removal, exceeding 2.5, ensuring precise material extraction without excessive copper loss. The process involves a chemical or electrochemical treatment that preferentially targets ruthenium while minimizing copper removal, improving yield and reducing waste. This selective removal is critical in semiconductor manufacturing, where precise control over metal deposition and etching is essential for device performance and reliability. The method may be applied in wet etching, chemical-mechanical planarization, or other semiconductor processing steps where metal selectivity is required. By optimizing the removal ratio, the invention enhances process efficiency and reduces costs associated with material waste and rework. The technique is particularly useful in advanced semiconductor nodes where ruthenium is used in interconnect structures, and precise metal removal is necessary to maintain electrical and mechanical integrity. The method may also be adapted for recycling semiconductor waste, recovering valuable metals while minimizing contamination. The invention provides a solution to the technical problem of achieving high ruthenium-to-copper selectivity in semiconductor processing, improving both manufacturing efficiency and environmental sustainability.
3. The method of claim 1, further comprising a pH adjuster present in an amount of about 0.01 wt % to about 10 wt %, based on the total weight of the polishing composition.
A polishing composition is used in chemical-mechanical planarization (CMP) processes to polish semiconductor substrates, such as wafers, to achieve a smooth and uniform surface. A key challenge in CMP is maintaining consistent polishing performance while minimizing defects and controlling material removal rates. The polishing composition includes abrasive particles, an oxidizing agent, and a pH adjuster. The pH adjuster is added to the composition in an amount ranging from about 0.01 wt % to about 10 wt %, based on the total weight of the composition. The pH adjuster regulates the acidity or alkalinity of the composition, which influences the chemical interactions between the polishing slurry and the substrate surface. By adjusting the pH, the composition can enhance polishing efficiency, reduce surface defects, and improve uniformity in material removal. The abrasive particles mechanically remove material, while the oxidizing agent facilitates chemical reactions that further aid in material removal. The pH adjuster ensures the composition remains within an optimal pH range for effective polishing, addressing issues such as corrosion, residue formation, and inconsistent polishing rates. This adjustment helps achieve precise control over the polishing process, improving yield and performance in semiconductor manufacturing.
4. The method of claim 1, wherein the oxygenated halogen compound comprises at least one halogen selected from the group consisting of iodine, bromine, chlorine, and any combinations thereof.
This invention relates to methods for producing oxygenated halogen compounds, which are used in various industrial and chemical processes. The problem addressed is the need for efficient and selective production of these compounds, which often involve complex reactions and require precise control of reaction conditions. The invention provides a method for synthesizing oxygenated halogen compounds, where the compounds contain at least one halogen selected from iodine, bromine, chlorine, or combinations thereof. These compounds are valuable intermediates in chemical synthesis, disinfectants, and other applications where halogen-based reactivity is desired. The method ensures the production of these compounds with high purity and yield, addressing challenges related to side reactions and byproduct formation. The halogen selection allows for tailored reactivity and stability, making the compounds suitable for specific industrial needs. The process may involve controlled oxidation or halogenation reactions, depending on the desired compound, and may incorporate catalysts or specific reaction conditions to enhance selectivity. This approach improves upon existing methods by providing a more efficient and versatile synthesis route for oxygenated halogen compounds.
5. The method of claim 1, wherein the oxygenated halogen is hydrogen periodate.
6. The method of claim 1, wherein the alkyl in the halogen alkyl benzotriazole is selected from the group consisting of methyl, ethyl, propyl, isopropyl, butyl, isobutyl, and any combinations thereof.
7. The method of claim 1, wherein the abrasive is selected from the group consisting of alumina, silica, titania, ceria, zirconia, co-formed products thereof, and any combinations thereof.
8. The method of claim 1, wherein the abrasive is silica.
This invention relates to abrasive materials used in grinding or polishing processes, specifically addressing the need for efficient and effective abrasive particles. The invention provides a method for using silica as an abrasive material to improve cutting or polishing performance. Silica, a hard and durable mineral, is employed to enhance the abrasive action by providing sharp edges and high wear resistance, which improves material removal rates and surface finish quality. The method involves selecting silica particles with specific size and shape characteristics to optimize their abrasive properties. The silica particles may be used in various forms, such as loose grains, bonded abrasives, or coated abrasives, depending on the application. The invention also includes the use of silica in combination with other abrasive materials or additives to further enhance performance. The method ensures consistent and reliable abrasive action, making it suitable for industrial applications where precision and efficiency are critical. The use of silica as an abrasive material offers advantages such as cost-effectiveness, availability, and environmental compatibility compared to traditional abrasives. The invention is particularly useful in industries such as metalworking, glass processing, and semiconductor manufacturing, where high-performance abrasives are required.
9. The method of claim 1, wherein the abrasive is present in an amount of about 0.01 wt % to about 12 wt %, based on the total weight of the polishing composition.
This invention relates to a polishing composition for chemical-mechanical planarization (CMP) used in semiconductor manufacturing. The composition addresses the challenge of achieving precise material removal rates and surface uniformity during polishing, which is critical for fabricating advanced integrated circuits. The composition includes an abrasive material, a liquid carrier, and optionally other additives to enhance polishing performance. The abrasive is incorporated in a controlled concentration to balance material removal efficiency and surface quality. Specifically, the abrasive is present in an amount ranging from approximately 0.01 weight percent to 12 weight percent, based on the total weight of the polishing composition. This concentration range ensures effective polishing while minimizing defects such as scratches or uneven removal. The liquid carrier, typically water or a water-based solution, facilitates the dispersion of the abrasive and other components. Additional additives, such as oxidizers, surfactants, or pH adjusters, may be included to further optimize polishing performance for specific materials like silicon dioxide, silicon nitride, or metal layers. The composition is designed to be compatible with CMP processes, providing consistent and reproducible results across multiple polishing applications.
10. The method of claim 1, wherein the acid is selected from the group consisting of carboxylic acids, amino acids, sulfonic acids, phosphoric acids, phosphonic acids, and any combination thereof.
11. The method of claim 10, wherein the sulfonic acid is present and is at least one organic sulfonic acid selected from the group consisting of 1,2-ethanedisulfonic acid, 4-amino-3-hydroxy-1-naphthalenesulfonic acid, 8-hydroxyquinoline-5-sulfonic acid, aminomethane sulfonic acid, benzenesulfonic acid, hydroxylamine o-sulfonic acid, methanesulfonic acid, m-xylene-4-sulfonic acid, poly(4-styrenesulfonic acid), polyanetholesulfonic acid, p-toluenesulfonic acid, and trifluoromethane-sulfonic acid.
12. The method of claim 10, wherein said phosphoric acid is present and is at least one organic phosphoric acid selected from the group consisting of ethyl phosphoric acid, cyanoethyl phosphoric acid, phenyl phosphoric acid and vinyl phosphoric acid.
13. The method of claim 10, wherein said phosphonic acid is present and is at least one organic phosphonic acid consisting of poly(vinylphosphonic acid), 1-hydroxyethane-1,1-diphosphonic acid, nitrilotri(methylphosphonic acid), diethylenetriaminepentakis (methylphosphonic acid), N,N,N′N′-ethylenediaminetetrakis(methylene phosphonic acid), n-hexylphosphonic acid, benzylphosphonic acid and phenylphosphonic acid.
14. The method of claim 1, wherein the acid is at least one acid selected from the group consisting of: malonic acid, propionic acid, an organic sulfonic acid, and any combinations thereof.
15. The method of claim 1, wherein the acid is present in an amount of about 0.01 wt % to about 10 wt %, based on the total weight of the polishing composition.
A polishing composition is used in chemical-mechanical planarization (CMP) processes to remove material from semiconductor wafers. A key challenge in CMP is achieving uniform material removal while minimizing defects and maintaining surface quality. The composition includes an abrasive, an oxidizer, and an acid to enhance polishing performance. The acid is incorporated in a controlled concentration to optimize the polishing rate and selectivity. Specifically, the acid is present in an amount ranging from about 0.01 wt % to about 10 wt % of the total composition weight. This concentration range ensures effective material removal without causing excessive corrosion or surface damage. The acid may be selected from various types, such as inorganic or organic acids, depending on the specific polishing requirements. The composition may also include additional components like surfactants, corrosion inhibitors, or pH adjusters to further refine polishing performance. The controlled acid concentration helps balance polishing efficiency, defect reduction, and surface smoothness, making the composition suitable for advanced semiconductor manufacturing.
16. The method of claim 1, wherein the polishing composition further comprises a surfactant.
17. The method of claim 16, wherein the surfactant is at least one surfactant selected from the group consisting of cationic surfactants, anionic surfactants, non-ionic surfactants, and amphoteric surfactants.
18. The method of claim 16, wherein the surfactant is an alkoxylated alcohol non-ionic surfactant.
This invention relates to a method for producing a surfactant composition, specifically focusing on the use of alkoxylated alcohol non-ionic surfactants. The method addresses the need for efficient and effective surfactant production, particularly in applications requiring stable and high-performance surfactant formulations. Alkoxylated alcohol non-ionic surfactants are known for their low foaming properties, good wetting ability, and compatibility with various formulations, making them suitable for industrial, household, and personal care applications. The method involves selecting an alkoxylated alcohol non-ionic surfactant, which is a type of surfactant derived from alcohols that have been modified through alkoxylation, typically with ethylene oxide or propylene oxide. These surfactants exhibit excellent surface activity, emulsification, and detergency properties. The process may include steps such as mixing, heating, or reacting the surfactant with other components to enhance its performance or stability. The resulting surfactant composition is designed to improve cleaning efficiency, reduce surface tension, and provide better dispersion in aqueous or non-aqueous systems. The use of alkoxylated alcohol non-ionic surfactants in this method ensures compatibility with a wide range of formulations, including those in detergents, emulsifiers, and wetting agents. The method may also include additional steps to optimize the surfactant's properties, such as adjusting the degree of alkoxylation or incorporating additives to enhance performance. The final surfactant composition is intended for use in various industries, including textile processing, agriculture, and industrial cleaning, where effective surfactant performance is critical.
19. The method of claim 16, wherein the surfactant is present in an amount of about 0.01 wt % to about 10 wt %, based on the total weight of the polishing composition.
This invention relates to a polishing composition for chemical-mechanical planarization (CMP) used in semiconductor manufacturing. The composition includes a surfactant to improve polishing performance, particularly in reducing defects and enhancing uniformity during the planarization process. The surfactant is incorporated in an amount ranging from 0.01 wt % to 10 wt % of the total composition weight. The surfactant helps stabilize the polishing slurry, reduce particle agglomeration, and improve surface quality by minimizing scratches and other defects. The composition is designed for use in polishing substrates such as silicon wafers, where precise material removal and surface smoothness are critical. The surfactant concentration is optimized to balance effectiveness in defect reduction while maintaining slurry stability and polishing efficiency. This invention addresses challenges in CMP processes where traditional compositions may lead to inconsistent polishing rates or surface imperfections, particularly in advanced semiconductor fabrication where defect control is essential. The surfactant's role is to enhance the slurry's ability to uniformly remove material without compromising the integrity of the polished surface.
20. The method of claim 1, wherein the pH of the polishing composition is from about 5 to about 11.
21. The method of claim 1, wherein the pH of the polishing composition is from about 7 to about 11.
23. The method of claim 22, wherein the composition further comprises an alkoxylated alcohol non-ionic surfactant, present in an amount of about 0.01 wt % to about 10 wt %, based on the total weight of the composition.
This invention relates to a cleaning composition, specifically a liquid laundry detergent, designed to improve cleaning performance while maintaining stability and reducing environmental impact. The composition addresses the challenge of balancing effective soil removal with minimal residue and eco-friendly formulation. The detergent includes a surfactant system, a solvent, and a builder, with the surfactant system comprising an anionic surfactant and an alkoxylated alcohol non-ionic surfactant. The alkoxylated alcohol non-ionic surfactant, present in a concentration of 0.01 wt % to 10 wt % of the total composition, enhances cleaning efficiency by improving wetting and emulsification of greasy soils. The solvent, such as a glycol ether, aids in dissolving and suspending soils, while the builder, like a citrate or carbonate, softens water and prevents redeposition. The composition may also include additional ingredients like enzymes, optical brighteners, and preservatives to further enhance performance and stability. The formulation ensures effective cleaning across various fabric types while minimizing environmental harm.
24. The method of claim 22, wherein the composition has a pH of about 5 to about 11.
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May 12, 2021
November 22, 2022
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