A semiconductor packaging substrate is provided and includes: an insulating layer, a thinned circuit structure formed of circuit layers and conductive posts stacked on one another embedding in the insulating layer, and a supporting structure formed on the insulating layer and having at least one through hole exposing the conductive posts. As such, before a subsequent packaging operation, the packaging substrate can be electrically tested and screened so as to prevent a defective packaging substrate from being misused in the subsequent packaging operation and hence avoid the loss of normal electronic elements. A method for fabricating a semiconductor packaging substrate and a packaging process using the semiconductor packaging substrate are also provided.
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
2. The semiconductor packaging substrate of claim 1, wherein the supporting structure is made of a photosensitive dielectric material or a photosensitive dry film material.
4. The semiconductor packaging process of claim 3, wherein the supporting structure is removed by a chemical method, laser, plasma, sandblasting or mechanical grinding.
5. The semiconductor packaging process of claim 3, further comprising, after completely removing the supporting structure, forming a conductive element on the first surface of the insulating layer to electrically connect the first end surfaces of the conductive posts.
7. The method of claim 6, wherein the through hole of the supporting structure is formed by lithography.
The invention relates to a method for fabricating a supporting structure with a through hole, particularly in microelectronic or semiconductor manufacturing. The problem addressed is the precise formation of through holes in supporting structures, which is critical for applications such as microelectromechanical systems (MEMS), integrated circuits, or packaging substrates where structural integrity and dimensional accuracy are essential. The method involves forming a through hole in a supporting structure using lithography. Lithography is a patterning technique that uses light or other radiation to transfer geometric patterns onto a substrate, typically involving steps such as photoresist application, exposure, development, and etching. The through hole is created by selectively removing material from the supporting structure in a defined region, ensuring precise dimensions and alignment. The supporting structure may be a layer or substrate made of materials like silicon, polymers, or metals, depending on the application. The lithographic process allows for high-resolution patterning, enabling the formation of through holes with tight tolerances and complex geometries. This method is particularly useful in applications requiring miniaturization, such as semiconductor devices or MEMS, where conventional drilling or mechanical methods may not achieve the necessary precision. The through hole can serve various functions, such as electrical interconnects, fluid channels, or structural openings, depending on the design requirements. The use of lithography ensures reproducibility and scalability, making it suitable for mass production in semiconductor and microfabrication industries.
8. The method of claim 6, wherein the supporting structure is made of a photosensitive dielectric material or a photosensitive dry film material.
This invention relates to the fabrication of microelectronic devices, specifically addressing challenges in forming precise supporting structures for microelectronic components. The problem solved involves creating stable, high-precision supporting structures that can withstand subsequent processing steps without deformation or misalignment. The invention describes a method for forming such structures using a photosensitive dielectric material or a photosensitive dry film material. These materials are selectively exposed to light, causing them to harden in specific areas while remaining soluble in others. The unexposed portions are then removed, leaving behind a precisely patterned supporting structure. The use of photosensitive materials allows for high-resolution patterning, ensuring the supporting structure maintains its integrity during further fabrication steps. This method is particularly useful in applications requiring fine-feature accuracy, such as semiconductor packaging or microelectromechanical systems (MEMS). The supporting structure provides mechanical stability to delicate components while enabling precise alignment and positioning. The invention improves upon traditional methods by leveraging the advantages of photosensitive materials, which offer better control over feature dimensions and reduced risk of structural collapse during processing.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
March 16, 2021
November 22, 2022
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.