Patentable/Patents/US-11508822
US-11508822

Source/drain via having reduced resistance

PublishedNovember 22, 2022
Assigneenot available in USPTO data we have
Inventorsnot available in USPTO data we have
Technical Abstract

A source/drain is disposed over a substrate. A source/drain contact is disposed over the source/drain. A first via is disposed over the source/drain contact. The first via has a laterally-protruding bottom portion and a top portion that is disposed over the laterally-protruding bottom portion.

Patent Claims
12 claims

Legal claims defining the scope of protection, as filed with the USPTO.

3

3. The device of claim 2, wherein the first via and the second via are offset with respect to one another in both an X-direction and a Y-direction in a top view.

4

4. The device of claim 2, further comprising: a glue layer disposed on side surfaces and a bottom surface of the second via.

5

5. The device of claim 4, wherein the glue layer contains titanium or titanium nitride.

6

6. The device of claim 1, wherein a first maximum lateral dimension of the laterally-protruding bottom portion is greater than a second maximum lateral dimension of the top portion.

7

7. The device of claim 1, wherein the source/drain contact and the first via have different metal material compositions.

8

8. The device of claim 1, wherein an uppermost surface of the source/drain contact is narrower than a bottommost surface of the first via.

9

9. The device of claim 1, wherein the laterally-protruding bottom portion is in direct contact with the source/drain contact.

13

13. The device of claim 11, wherein the source/drain via and the gate via are offset from each other in both a first horizontal direction and a second horizontal direction that is perpendicular to the first horizontal direction in a top view.

14

14. The device of claim 11, wherein the glue layer contains titanium or titanium nitride.

17

17. The device of claim 16, further comprising: a glue layer disposed on side surfaces and a bottom surface of the gate via, wherein the glue layer contains titanium or titanium nitride.

19

19. The device of claim 15, wherein a bottom surface of the source/drain via is in direct contact with a top surface of the source/drain contact.

20

20. The device of claim 15, wherein the top portion of the source/drain via is more slanted than the laterally-protruding bottom portion of the source/drain via in the cross-sectional side view.

Classification Codes (CPC)

Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.

Patent Metadata

Filing Date

June 11, 2020

Publication Date

November 22, 2022

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Cite as: Patentable. “Source/drain via having reduced resistance” (US-11508822). https://patentable.app/patents/US-11508822

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