A semiconductor structure is provided. The semiconductor structure includes a gate structure over a fin structure. The semiconductor structure also includes a source/drain structure in the fin structure and adjacent to the gate structure. The semiconductor structure also includes a first contact plug over the source/drain structure. The semiconductor structure also includes a first via plug over the first contact plug. The semiconductor structure also includes a dielectric layer surrounding the first via plug. The first via plug includes a first group IV element and the dielectric layer includes the first group IV element and a second group IV element.
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2. The semiconductor structure as claimed in claim 1, wherein the first via plug has a bottom surface in contact with the first contact plug and a top surface opposite to the bottom surface, and a concentration of the first group IV element in the first via plug gradually decreases from the top surface to the bottom surface of the first via plug.
The semiconductor structure relates to an advanced interconnect technology for integrated circuits, addressing challenges in signal integrity and reliability in high-density semiconductor devices. The structure includes a first via plug electrically connecting a first contact plug to an overlying conductive feature, such as a metal line or another via. The first via plug contains a first group IV element, which may be silicon, germanium, or a combination thereof, to enhance electrical conductivity and mechanical stability. A key feature is the graded concentration profile of the first group IV element within the via plug, where the concentration decreases gradually from the top surface to the bottom surface. This gradient distribution improves adhesion between the via plug and adjacent materials, reduces stress-induced voiding, and ensures uniform current distribution, thereby enhancing overall device performance and reliability. The first contact plug, typically embedded in a dielectric layer, provides electrical connection to an underlying active or passive device region. The via plug's composition and graded doping profile are optimized to minimize resistance and electromigration effects, critical for advanced semiconductor nodes where interconnect scaling demands precise material engineering. This design is particularly relevant for back-end-of-line (BEOL) interconnects in logic and memory devices, where reliable signal transmission is essential.
3. The semiconductor structure as claimed in claim 2, wherein the first group IV element comprises carbon (C), silicon (Si) or germanium (Ge).
This invention relates to semiconductor structures incorporating group IV elements to enhance performance. The structure includes a substrate with a first group IV element layer, such as carbon (C), silicon (Si), or germanium (Ge), deposited on its surface. The layer is formed using a deposition process that ensures precise control over thickness and composition. The structure may also include additional layers, such as a second group IV element layer or a dielectric layer, to further optimize electrical or thermal properties. The use of group IV elements in the semiconductor structure improves carrier mobility, reduces leakage current, and enhances overall device efficiency. This design is particularly useful in advanced semiconductor devices, such as transistors or memory cells, where high performance and reliability are critical. The invention addresses challenges in semiconductor fabrication, including material compatibility, process control, and performance optimization, by leveraging the unique properties of group IV elements. The resulting structure provides a scalable solution for next-generation semiconductor applications.
4. The semiconductor structure as claimed in claim 2, wherein the first via plug comprises tungsten (W), tungsten germanium (WGe), tungsten carbon (WC), tungsten silicon (WSi2) or a combination thereof.
This invention relates to semiconductor structures, specifically addressing the composition of conductive via plugs used in integrated circuits. The problem being solved is the need for reliable, high-performance conductive pathways in semiconductor devices, particularly in advanced nodes where resistance and electromigration resistance are critical. The invention discloses a semiconductor structure featuring a via plug composed of tungsten (W), tungsten germanium (WGe), tungsten carbon (WC), tungsten silicon (WSi2), or a combination of these materials. These materials are selected for their superior electrical conductivity, thermal stability, and resistance to electromigration, which are essential for maintaining signal integrity and device longevity in high-density semiconductor designs. The via plug connects conductive layers within the semiconductor structure, ensuring efficient charge transport while minimizing resistive losses. The use of these specific tungsten-based alloys or compounds enhances the via plug's mechanical strength and adhesion to surrounding dielectric materials, reducing the risk of void formation or structural degradation over time. This innovation is particularly relevant in advanced semiconductor manufacturing, where traditional copper or aluminum via plugs may face limitations in performance or reliability. The disclosed composition improves overall device efficiency, scalability, and operational lifespan, making it suitable for applications in high-performance computing, memory devices, and other semiconductor technologies.
6. The semiconductor structure as claimed in claim 1, wherein the second group IV element comprises silicon (Si), and wherein the dielectric layer is formed of carbon dioxide (CO2), silicon dioxide (SiO2), germanium dioxide (GeO2) or a combination thereof.
This invention relates to semiconductor structures incorporating a second group IV element, specifically silicon (Si), and a dielectric layer composed of carbon dioxide (CO2), silicon dioxide (SiO2), germanium dioxide (GeO2), or a combination of these materials. The structure addresses challenges in semiconductor fabrication, such as improving insulation properties, enhancing thermal stability, or optimizing electrical performance in integrated circuits. The semiconductor structure includes a substrate with a first group IV element, such as germanium (Ge), and a second group IV element, silicon (Si), integrated into the structure. The dielectric layer, formed from CO2, SiO2, GeO2, or a combination, provides electrical insulation and thermal management. This layer is critical for preventing current leakage, reducing parasitic capacitance, and ensuring reliable device operation. The use of these dielectric materials offers advantages in terms of compatibility with existing semiconductor processes, high dielectric strength, and thermal stability. The combination of silicon with the specified dielectric materials enables the fabrication of advanced semiconductor devices, such as transistors, capacitors, or memory cells, with improved performance and reliability. The dielectric layer's composition ensures effective insulation while maintaining structural integrity under varying operating conditions. This invention is particularly relevant in applications requiring high-performance, low-power semiconductor devices, such as microprocessors, memory chips, and power electronics.
7. The semiconductor structure as claimed in claim 1, wherein the concentration of the first group IV element in the dielectric layer gradually decreases from a top surface to a bottom surface of the dielectric layer, wherein the concentration of the second group IV element is uniform in the dielectric layer.
This invention relates to semiconductor structures with a dielectric layer containing two different group IV elements, addressing challenges in material uniformity and performance in advanced semiconductor devices. The dielectric layer is engineered to have a non-uniform concentration profile for one group IV element while maintaining a uniform concentration for the other. Specifically, the concentration of the first group IV element gradually decreases from the top surface to the bottom surface of the dielectric layer, while the concentration of the second group IV element remains constant throughout the layer. This controlled gradient in the first element's concentration can improve electrical properties, such as dielectric constant tuning, leakage current reduction, or interface quality enhancement, while the uniform distribution of the second element ensures stability and consistency in the material's overall performance. The structure is particularly useful in high-k dielectric applications, gate dielectrics, or interlayer dielectrics where precise material composition control is critical for device functionality and reliability. The invention provides a method to optimize dielectric properties by tailoring the distribution of group IV elements within the layer, addressing limitations in conventional uniform doping approaches.
10. The semiconductor structure as claimed in claim 9, wherein the first group IV element comprises carbon (C), silicon (Si) or germanium (Ge), and the second group IV element comprises silicon (Si).
A semiconductor structure includes a substrate with a first group IV element and a second group IV element. The first group IV element is selected from carbon (C), silicon (Si), or germanium (Ge), while the second group IV element is silicon (Si). The structure is designed to enhance semiconductor properties by incorporating these elements, which can improve electrical conductivity, thermal stability, or mechanical strength. The substrate may be a single-crystal or polycrystalline material, and the elements are distributed in a controlled manner to achieve desired electronic or optoelectronic characteristics. This structure is useful in advanced semiconductor devices, such as transistors, memory cells, or photonic components, where precise material composition is critical for performance. The combination of group IV elements allows for tuning of bandgap, carrier mobility, or lattice mismatch, addressing challenges in high-speed, low-power, or high-temperature applications. The structure may also include additional layers or dopants to further optimize device functionality.
11. The semiconductor structure as claimed in claim 9, wherein the dielectric layer has a top surface aligned with a top surface of the first via plug and a bottom surface between the top surface and a bottom surface of the first via plug.
This invention relates to semiconductor structures, specifically addressing challenges in forming reliable interconnects in advanced integrated circuits. The structure includes a first via plug embedded in a dielectric layer, where the dielectric layer's top surface is aligned with the top surface of the first via plug. The dielectric layer's bottom surface is positioned between the top and bottom surfaces of the first via plug, ensuring precise alignment and minimizing misalignment issues during fabrication. This configuration improves electrical connectivity and reduces defects in multi-layer interconnect systems. The structure may also include a second via plug electrically connected to the first via plug, with the second via plug having a bottom surface aligned with the bottom surface of the first via plug. The dielectric layer may be formed using a self-aligned process, such as selective deposition or etching, to achieve precise dimensional control. The invention is particularly useful in high-density semiconductor devices where precise alignment of interconnect features is critical for performance and reliability. The structure may further include additional conductive features, such as metal lines or contact pads, integrated with the via plugs to form a complete interconnect network. The dielectric layer may be composed of materials with low dielectric constants to reduce parasitic capacitance and improve signal integrity. The overall design ensures robust electrical connections while maintaining manufacturing yield and scalability.
12. The semiconductor structure as claimed in claim 11, wherein the concentration of the first group IV element in the first via plug gradually decreases from the top surface to the bottom surface of the first via plug, and the concentration of the second group IV element is uniform in the dielectric layer.
This invention relates to semiconductor structures, specifically addressing challenges in via plug formation and material composition for improved electrical and thermal conductivity. The structure includes a first via plug composed of a first group IV element, such as silicon or germanium, and a second group IV element, such as carbon or tin, embedded within a dielectric layer. The first via plug has a graded concentration profile where the concentration of the first group IV element decreases from the top surface to the bottom surface, while the second group IV element maintains a uniform concentration throughout the dielectric layer. This graded composition enhances electrical conductivity and reduces stress at the interface between the via plug and the surrounding dielectric material. The structure may also include a second via plug with a different composition or concentration profile to optimize performance for specific applications, such as interconnects in integrated circuits. The invention aims to improve reliability and efficiency in semiconductor devices by controlling material distribution within the via plugs.
13. The semiconductor structure as claimed in claim 11, wherein the concentration of the first group IV element in the first dielectric layer gradually decreases from the top surface to the bottom surface of the dielectric layer.
The semiconductor structure relates to advanced integrated circuit fabrication, specifically addressing challenges in dielectric layer composition for improved electrical and thermal performance. The structure includes a dielectric layer containing a first group IV element, such as silicon or germanium, with a concentration gradient. The concentration of this element gradually decreases from the top surface to the bottom surface of the dielectric layer. This gradient profile enhances material properties, such as dielectric constant tuning, stress management, or thermal conductivity, which are critical for high-performance semiconductor devices. The dielectric layer is integrated into a semiconductor device, such as a transistor or memory cell, where precise control of material composition is essential for optimizing device functionality. The gradient concentration ensures uniform electrical characteristics and reduces defects, improving reliability and performance. This approach is particularly useful in advanced nodes where traditional uniform dielectric layers may not meet performance requirements. The structure may also include additional layers or features, such as conductive contacts or barrier layers, to further enhance device operation. The gradual concentration profile is achieved through controlled deposition or annealing processes, ensuring precise material distribution. This innovation addresses limitations in conventional dielectric layers, offering a solution for next-generation semiconductor technologies.
15. The semiconductor structure as claimed in claim 14, wherein the first via plug comprises a first compound, and the dielectric layer comprises a second compound and a third compound.
The semiconductor structure relates to integrated circuit fabrication, specifically addressing challenges in via plug and dielectric layer composition to improve electrical performance and reliability. The structure includes a first via plug formed within a dielectric layer, where the via plug provides electrical connectivity between different conductive layers in the semiconductor device. The first via plug is composed of a first compound, which may be a conductive material such as tungsten, copper, or a conductive alloy, ensuring low resistance and efficient signal transmission. The dielectric layer surrounding the via plug is composed of a second compound and a third compound, which may include insulating materials like silicon dioxide, silicon nitride, or low-k dielectrics. The combination of these compounds in the dielectric layer enhances insulation properties, reduces parasitic capacitance, and improves overall device performance. The specific composition of the via plug and dielectric layer materials is optimized to minimize signal delay, prevent electromigration, and ensure long-term reliability in advanced semiconductor devices. This structure is particularly useful in high-density integrated circuits where precise control of electrical and thermal properties is critical.
16. The semiconductor structure as claimed in claim 15, wherein the third compound is different from the second compound.
A semiconductor structure includes a substrate with a first compound layer, a second compound layer, and a third compound layer. The first compound layer is formed on the substrate and contains a first group III element and a first group V element. The second compound layer is formed on the first compound layer and contains a second group III element and the first group V element. The third compound layer is formed on the second compound layer and contains a third group III element and the first group V element. The third compound is different from the second compound, ensuring distinct material properties in the third layer compared to the second layer. This structure is designed to enhance electronic or optical performance by leveraging the unique characteristics of each compound layer. The substrate may be a semiconductor wafer, and the layers are epitaxially grown to ensure precise control over material composition and thickness. The structure is particularly useful in applications requiring tailored bandgap engineering, such as high-electron-mobility transistors (HEMTs) or photonic devices, where the distinct properties of each layer contribute to improved device functionality.
17. The semiconductor structure as claimed in claim 14, wherein the first group IV element is different from the second group IV element.
The semiconductor structure relates to advanced semiconductor materials, specifically those incorporating multiple group IV elements to enhance performance. The problem addressed is the need for improved semiconductor properties, such as bandgap engineering, carrier mobility, or thermal stability, by leveraging the unique characteristics of different group IV elements. The structure includes a semiconductor material layer composed of at least two distinct group IV elements, such as silicon, germanium, or carbon, where the first group IV element differs from the second. This compositional variation allows for tailored electronic and optical properties, enabling applications in high-performance transistors, photonic devices, or memory elements. The structure may also include additional layers or regions to further optimize functionality, such as strain engineering or doping profiles. The use of dissimilar group IV elements provides flexibility in designing materials with desired electrical, thermal, or mechanical properties, addressing limitations in conventional semiconductor materials. This approach is particularly relevant for next-generation semiconductor devices requiring enhanced efficiency, speed, or integration density.
18. The semiconductor structure as claimed in claim 14, wherein a maximum concentration of the first group IV element in the first via plug is located at a close position to a top surface of the dielectric layer.
The semiconductor structure relates to integrated circuit fabrication, specifically addressing challenges in forming reliable electrical connections between metal layers using via plugs. A common issue in semiconductor manufacturing is ensuring proper conductivity and structural integrity of via plugs, which connect different metal layers through dielectric layers. The invention improves upon prior art by optimizing the distribution of a first group IV element (such as silicon, germanium, or tin) within a via plug to enhance electrical performance and reliability. The semiconductor structure includes a dielectric layer with a via plug formed therein, where the via plug contains a first group IV element. The key innovation is that the maximum concentration of this element is positioned near the top surface of the dielectric layer, rather than being uniformly distributed or concentrated elsewhere. This placement improves electrical contact resistance and reduces defects, such as voids or delamination, which can occur during thermal cycling or electrical stress. The via plug may also include a second group IV element, which may be distributed differently to further optimize conductivity and mechanical stability. The structure ensures robust electrical connections in advanced semiconductor devices, particularly in multi-layered integrated circuits where via reliability is critical.
19. The semiconductor structure as claimed in claim 14, wherein a maximum concentration of the first group IV element in the first via plug is above the bottom surface of the dielectric layer.
The semiconductor structure relates to advanced integrated circuit fabrication, specifically addressing challenges in forming reliable electrical connections through dielectric layers. The structure includes a first via plug formed within a dielectric layer, where the via plug provides electrical connectivity between different conductive layers in the semiconductor device. A key aspect of the invention is the distribution of a first group IV element (such as silicon, germanium, or carbon) within the via plug. The maximum concentration of this element is positioned above the bottom surface of the dielectric layer, ensuring improved material properties and reliability. This distribution helps mitigate issues like void formation, electromigration, and poor adhesion, which can degrade performance in high-density interconnects. The via plug may also include a second group IV element, where the concentration profiles of both elements are optimized to enhance conductivity and structural integrity. The structure is particularly useful in advanced nodes where interconnect scaling demands precise control over material composition to maintain signal integrity and device longevity.
20. The semiconductor structure as claimed in claim 19, wherein a maximum compressive stress between the first via plug and the dielectric layer occurs at an interface between the first via plug and the dielectric layer having the maximum concentration of the first group IV element.
This invention relates to semiconductor structures with improved stress management, particularly in via plugs and dielectric layers. The problem addressed is the stress-induced reliability issues in semiconductor interconnects, where mismatches in material properties between conductive via plugs and surrounding dielectric layers can lead to mechanical failures, such as cracking or delamination. The semiconductor structure includes a first via plug embedded in a dielectric layer, where the dielectric layer contains a first group IV element (e.g., silicon, germanium, or carbon) with a varying concentration profile. The concentration of the first group IV element is highest at the interface between the via plug and the dielectric layer, creating a localized region of maximum compressive stress. This design helps mitigate stress concentrations that could otherwise degrade the structure's mechanical integrity. The via plug is formed from a conductive material, such as copper or tungsten, and the dielectric layer is typically an insulating material like silicon dioxide or a low-k dielectric. The controlled distribution of the group IV element in the dielectric layer ensures that the stress is distributed more evenly, reducing the risk of failure. The structure may also include additional layers, such as barrier layers or adhesion promoters, to further enhance reliability. This approach is particularly useful in advanced semiconductor nodes where stress management is critical for long-term performance.
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August 31, 2020
November 29, 2022
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