The subject application discloses a substrate. The substrate includes a first conductive layer, a first bonding layer, a first dielectric layer, and a conductive via. The first bonding layer is disposed on the first conductive layer. The first dielectric layer is disposed on the first bonding layer. The conductive via penetrates the first dielectric layer and is electrically connected with the first conductive layer.
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2. The substrate of claim 1, wherein the first dielectric layer includes a first surface and a second surface opposite to the first surface, the conductive via extends from the first surface to the second surface.
This invention relates to semiconductor substrates with embedded conductive vias for improved electrical interconnectivity. The problem addressed is the need for efficient vertical electrical connections within semiconductor devices, particularly in multi-layered structures where signal integrity and thermal management are critical. The substrate includes a first dielectric layer with a first surface and an opposing second surface. A conductive via extends through the entire thickness of the dielectric layer, connecting electrical components on opposite sides. This via provides a direct conductive path, reducing signal delay and improving thermal dissipation compared to traditional interconnect methods. The via's full-thickness extension ensures robust electrical connectivity across the dielectric layer, which is essential for high-performance semiconductor applications. The dielectric layer may be part of a larger substrate structure, potentially including additional layers or components. The conductive via's design minimizes resistance and capacitance, enhancing signal transmission speed and reliability. This configuration is particularly useful in advanced packaging and 3D integrated circuits where vertical interconnects are critical for compact, high-density designs. The invention improves upon prior art by ensuring consistent electrical performance across the substrate while maintaining structural integrity.
3. The substrate of claim 1, wherein the first bonding layer is configured for a promoter.
A substrate is provided for use in semiconductor or microelectronic applications, addressing challenges related to bonding and interface stability between different material layers. The substrate includes a first bonding layer designed to facilitate adhesion between a semiconductor material and an insulating layer, such as an oxide or dielectric. This bonding layer is specifically configured to incorporate a promoter, which enhances the bonding strength and reliability by improving chemical or physical interactions at the interface. The promoter may be a material or treatment that modifies the surface properties of the bonding layer, such as increasing reactivity or reducing defects. The substrate may also include additional layers, such as a semiconductor layer, an insulating layer, and a second bonding layer, where the second bonding layer further supports adhesion between the insulating layer and another material, such as a carrier or additional semiconductor layer. The overall structure ensures robust mechanical and electrical performance, particularly in applications requiring high thermal or mechanical stability, such as advanced packaging or 3D integrated circuits. The promoter within the first bonding layer is critical for achieving consistent and durable bonding, addressing issues like delamination or interface degradation over time.
4. The substrate of claim 1, wherein the first bonding layer is configured for an adhesive layer.
A system for bonding substrates includes a first bonding layer applied to a substrate surface, where the bonding layer is specifically designed to function as an adhesive layer. This adhesive layer facilitates secure attachment between the substrate and another material or component. The substrate may be part of a larger assembly, such as a semiconductor device, electronic package, or structural component, where reliable bonding is critical. The adhesive layer ensures strong adhesion while maintaining mechanical and environmental stability. The bonding layer may be composed of materials such as epoxies, acrylates, or other adhesives optimized for specific applications, including high-temperature or high-stress environments. The system may also include additional layers or coatings to enhance adhesion, durability, or electrical properties. The adhesive layer can be applied using techniques like spin coating, spraying, or lamination, depending on the substrate and application requirements. This configuration improves bonding reliability in manufacturing processes where substrates must withstand mechanical stress, thermal cycling, or chemical exposure. The adhesive layer may also be formulated to cure under specific conditions, such as UV light or heat, to achieve optimal bonding strength. The system is particularly useful in industries requiring precise and durable substrate bonding, such as electronics, automotive, and aerospace.
5. The substrate of claim 1, wherein a thickness of the first bonding layer is in a range from about 50 Ångstrom (Å) to about 100 Å.
The invention relates to semiconductor substrates with improved bonding layers for enhanced device performance. The problem addressed is achieving reliable and efficient bonding between layers in semiconductor structures, particularly in thin-film applications where bonding integrity and uniformity are critical. The substrate includes a first bonding layer with a precisely controlled thickness to optimize adhesion and electrical properties. The thickness of this bonding layer is specified to be between approximately 50 angstroms (Å) and 100 Å, ensuring sufficient bonding strength while minimizing defects and resistance. This range balances mechanical stability and electrical conductivity, making it suitable for advanced semiconductor devices such as transistors, memory cells, or photonic components. The bonding layer may be composed of materials like silicon oxide, silicon nitride, or other dielectric or conductive films, depending on the application. The controlled thickness prevents delamination and ensures uniform layer deposition, which is essential for high-yield manufacturing and reliable device operation. This innovation is particularly valuable in applications requiring precise layer stacking, such as 3D integrated circuits, MEMS devices, or wafer-level packaging. The invention improves manufacturing consistency and device performance by addressing the challenge of maintaining bonding integrity at nanoscale dimensions.
6. The substrate of claim 1, wherein a thickness of the first conductive layer is equal to or less than 3 micrometers (μm).
This invention relates to semiconductor substrates with conductive layers, addressing the need for precise control of conductive layer thickness to optimize electrical performance and manufacturing efficiency. The substrate includes a base material with a first conductive layer deposited on its surface. The first conductive layer has a thickness of 3 micrometers or less, ensuring minimal material usage while maintaining sufficient conductivity for integrated circuit applications. The conductive layer may be composed of metals, alloys, or conductive polymers, depending on the specific application. The substrate may also include additional layers, such as insulating or semiconductor layers, to form functional electronic devices. The thin conductive layer reduces parasitic capacitance and resistance, improving signal integrity and device speed. The invention is particularly useful in high-density semiconductor devices where precise layer thickness is critical for performance and reliability. The manufacturing process involves deposition techniques like sputtering, chemical vapor deposition, or electroplating, followed by etching or polishing to achieve the desired thickness. The thin conductive layer also enables finer feature sizes, supporting advanced semiconductor fabrication processes. The invention ensures compatibility with existing semiconductor manufacturing equipment while enhancing device performance.
7. The substrate of claim 1, further comprising a carrier on which the first conductive layer is disposed.
This invention relates to a substrate structure with an improved conductive layer configuration. The problem addressed is enhancing electrical conductivity and structural integrity in substrates used in electronic devices, particularly where high-performance conductive pathways are required. The substrate includes a first conductive layer with a specific composition and thickness, optimized for low resistance and high durability. A carrier material is integrated beneath the first conductive layer to provide mechanical support and thermal stability, ensuring the conductive layer maintains its properties under operational stress. The carrier may be selected from materials such as polymers, ceramics, or metals, depending on the application requirements. The first conductive layer is deposited or bonded onto the carrier using techniques like sputtering, electroplating, or lamination, ensuring strong adhesion and uniform conductivity. This configuration improves heat dissipation, reduces signal loss, and extends the lifespan of the substrate in high-frequency or high-power applications. The invention is particularly useful in printed circuit boards, flexible electronics, and semiconductor packaging where reliable conductive pathways are critical. The carrier's role is to prevent deformation or delamination of the conductive layer, even under thermal cycling or mechanical stress, while maintaining electrical performance.
8. The substrate of claim 1, wherein the conductive via penetrates the first bonding layer.
A method for fabricating a semiconductor device involves forming a conductive via that extends through a bonding layer to electrically connect components in a stacked structure. The bonding layer, which may be an adhesive or dielectric material, is used to bond two or more semiconductor substrates or layers together. The conductive via penetrates this bonding layer, enabling vertical electrical connections between the bonded layers. This technique is particularly useful in 3D integrated circuits, where multiple layers of circuitry are stacked to increase device density and performance. The via may be formed using processes such as etching, plating, or deposition, ensuring reliable electrical conductivity through the bonding layer. The invention addresses challenges in interconnecting stacked semiconductor layers while maintaining structural integrity and electrical performance. The conductive via may also include barrier or seed layers to prevent diffusion and improve adhesion. This approach enhances signal integrity and reduces parasitic resistance in advanced semiconductor packaging and integration technologies.
14. The substrate of claim 13, wherein the thickness of the conductive layer is equal to or less than 3 μm.
This invention relates to a substrate with a conductive layer, addressing the need for thin, efficient conductive coatings in electronic or semiconductor applications. The substrate includes a base material with a conductive layer deposited on its surface, where the conductive layer has a thickness of 3 micrometers or less. This thin conductive layer improves electrical performance by reducing resistance and enhancing signal transmission while minimizing material usage. The substrate may be used in applications requiring precise conductivity control, such as flexible electronics, sensors, or integrated circuits. The conductive layer can be composed of materials like metals, conductive polymers, or carbon-based compounds, depending on the application. The thinness of the layer ensures compatibility with miniaturized devices and reduces weight, making it suitable for portable or wearable electronics. The invention also ensures uniform conductivity across the substrate, preventing hotspots or signal degradation. By limiting the conductive layer thickness to 3 micrometers or less, the invention balances electrical efficiency with material economy, addressing challenges in high-performance, compact electronic systems.
15. The substrate of claim 13, further comprising a conductive via penetrating the dielectric layer to be electrically connected to the conductive layer.
A semiconductor substrate includes a conductive layer embedded within a dielectric layer, where the conductive layer is positioned at a predetermined depth from a surface of the substrate. The conductive layer is configured to provide electrical shielding or grounding functionality. The substrate further includes a conductive via that penetrates the dielectric layer to establish an electrical connection with the conductive layer. This via allows for signal routing, grounding, or shielding purposes, ensuring proper electrical performance of the substrate. The conductive layer and via together form a conductive path that can be integrated into larger semiconductor devices or packages to manage electromagnetic interference, signal integrity, or power distribution. The via may be formed using standard semiconductor fabrication techniques, such as etching and metallization, to ensure precise alignment and reliable electrical contact with the conductive layer. This configuration enhances the substrate's functionality by enabling controlled electrical connections to the embedded conductive layer, which is otherwise isolated within the dielectric material. The design is particularly useful in high-frequency or high-density semiconductor applications where shielding, grounding, or signal routing is critical.
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December 3, 2020
November 29, 2022
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