A method for the nanoscale etching of a layer of Ge1-xSnx on a carrier for a FET transistor, x being the concentration of tin in the GeSn alloy, the etching method includes a step of plasma-etching the layer of Ge1-xSnx using a mixture comprising dichlorine (Cl2) and dinitrogen (N2) and under an etching pressure lower than or equal to 50 mTorr, preferably lower than or equal to 10 mTorr. A method for producing a conduction channel on a carrier for a FET transistor, comprising a step of forming a layer of Ge1-xSnx on the carrier, the layer being produced by epitaxial growth, and a step of etching the layer of Ge1-xSnx according to the etching method. A conduction channel made of Ge1-xSnx for a FET transistor, the channel being obtained according to the production method, and a FET transistor comprising a plurality of conduction channels made of Ge1-xSnx.
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2. The method according to claim 1, the etching pressure being lower than or equal to 5 mTorr.
A method for etching a substrate involves controlling the etching pressure to achieve precise material removal. The process is used in semiconductor manufacturing or microfabrication, where accurate etching is critical for device performance. The method addresses the challenge of maintaining uniformity and control during etching, which can be affected by variations in pressure. By setting the etching pressure at or below 5 mTorr, the method ensures consistent etching rates and minimizes defects such as over-etching or under-etching. This pressure range is particularly effective for fine-feature etching, where high precision is required. The method may also include additional steps such as plasma generation, gas flow regulation, and temperature control to further enhance etching accuracy. The low-pressure environment helps stabilize the plasma, reducing ion energy fluctuations and improving etch uniformity across the substrate. This approach is suitable for etching materials like silicon, silicon dioxide, or other semiconductor materials, and can be integrated into existing semiconductor fabrication processes. The method ensures high-quality etching with minimal damage to the substrate, making it valuable for advanced microfabrication applications.
3. The method according to claim 2, the etching pressure being lower than or equal to 2 mTorr for a concentration x of tin higher than or equal to 15%.
This invention relates to a method for etching a material, specifically addressing the challenge of achieving precise and controlled etching in processes involving tin-containing materials. The method involves adjusting the etching pressure based on the concentration of tin in the material to optimize the etching process. For tin concentrations of 15% or higher, the etching pressure is maintained at or below 2 mTorr to ensure effective material removal while minimizing unwanted side effects such as surface damage or uneven etching. The method is particularly useful in semiconductor manufacturing, where precise control of etching parameters is critical for producing high-quality devices. By correlating the etching pressure with the tin concentration, the method enables improved process consistency and reliability, addressing the need for better control in etching processes involving high-tin-content materials. The invention builds on a broader method that includes selecting an etching gas mixture and controlling the etching pressure, with the specific pressure constraint for high-tin concentrations ensuring optimal performance. This approach helps mitigate issues such as excessive material loss or poor etch uniformity, which are common challenges in etching processes involving tin-containing alloys or compounds.
4. The method according to claim 1, the mixture further comprising dioxygen (O2).
This invention relates to a method for producing a chemical mixture with enhanced properties, particularly for applications in energy storage, catalysis, or material synthesis. The method involves combining a primary reactant with a secondary reactant to form a mixture, where the primary reactant is a metal-containing compound and the secondary reactant is a reducing agent. The mixture is then subjected to controlled thermal or chemical processing to induce a reaction, resulting in a final product with improved stability, reactivity, or conductivity. The key innovation is the inclusion of dioxygen (O2) in the mixture, which modifies the reaction pathway to enhance the desired properties of the final product. The presence of O2 can facilitate oxidation-reduction reactions, improve material uniformity, or adjust the stoichiometry of the final composition. The method may be applied to synthesize advanced materials such as metal oxides, catalysts, or energy storage compounds, addressing challenges in performance, durability, or efficiency in industrial processes. The controlled introduction of O2 ensures precise tuning of the mixture's properties, making it suitable for high-performance applications.
5. The method according to claim 1, the step of removing consisting of an acid chemical attack, the acid preferably being hydrofluoric acid (HF) or hydrochloric acid (HCl).
This invention relates to a method for removing material from a substrate, particularly in semiconductor or microfabrication processes where precise material removal is required. The problem addressed is the need for an effective and controlled method to remove material layers, such as silicon dioxide (SiO2) or other oxides, from a substrate without damaging underlying structures. The method involves a chemical etching process using an acid to selectively remove material. The acid used is preferably hydrofluoric acid (HF) or hydrochloric acid (HCl), which are known for their ability to dissolve oxides efficiently. The acid attack is carefully controlled to ensure that only the target material is removed while preserving adjacent or underlying layers. This selective removal is critical in applications like semiconductor manufacturing, where precise patterning and layer removal are essential for device functionality. The method may also include additional steps such as cleaning the substrate before or after the acid treatment to ensure no residual contaminants remain. The use of HF or HCl provides a fast and reliable way to remove oxides, making it suitable for high-precision applications where traditional mechanical or plasma-based etching methods may be too aggressive or imprecise. The controlled chemical attack ensures minimal undercutting and damage to the substrate, maintaining structural integrity. This approach is particularly useful in processes like wafer fabrication, where maintaining clean and precise material removal is crucial for yield and performance.
6. The method according to claim 1, further comprising a step of depositing a mask on the layer of Ge1-xSnx, preferably a hard mask, for example a mask made of hydrogen silsesqwoxane (HSQ) resin, said deposition step coming before the step of plasma-etching the Ge1-xSnx.
This invention relates to semiconductor fabrication, specifically to methods for etching germanium-tin (Ge1-xSnx) layers. The problem addressed is the precise and controlled etching of Ge1-xSnx layers, which is challenging due to the material's composition and properties. The invention improves upon prior methods by introducing a masking step before plasma etching. A mask, preferably a hard mask such as hydrogen silsesquioxane (HSQ) resin, is deposited onto the Ge1-xSnx layer. This mask enhances etch selectivity and precision, allowing for more accurate patterning of the Ge1-xSnx material during subsequent plasma etching. The hard mask provides better resistance to the plasma etching process compared to softer masks, ensuring that the underlying Ge1-xSnx layer is etched with high fidelity. This method is particularly useful in semiconductor device manufacturing where precise control over material removal is critical, such as in the fabrication of transistors, photonic devices, or other integrated circuit components. The use of HSQ resin as the mask material offers advantages in terms of etch resistance and compatibility with standard semiconductor processing techniques.
7. The method according to claim 6, further comprising a step of removing the mask, said step of removing the mask coming after the step of plasma-etching the Ge1-xSnx.
This invention relates to semiconductor fabrication, specifically to a method for etching germanium-tin (Ge1-xSnx) alloys using a plasma etching process. The method addresses challenges in precisely etching Ge1-xSnx layers while maintaining structural integrity and minimizing damage to underlying materials. The process involves depositing a mask layer over the Ge1-xSnx material, followed by plasma etching to selectively remove portions of the Ge1-xSnx layer. After the plasma etching step, the mask is removed to expose the patterned Ge1-xSnx structure. The mask serves as a protective layer during etching, ensuring precise control over the etching process and preventing unintended material removal. The removal of the mask after etching ensures that no residual mask material interferes with subsequent fabrication steps. This method is particularly useful in advanced semiconductor manufacturing where precise patterning of Ge1-xSnx alloys is required for high-performance electronic and optoelectronic devices. The invention improves upon existing techniques by integrating a dedicated mask removal step, enhancing process reliability and yield.
9. The method according to claim 8, the carrier comprising a free surface, the free surface comprising a layer of Ge such that the layer of Ge1-xSnx is formed on the layer of Ge, the method further comprising a step of selectively plasma-etching the layer of Ge, said selective plasma-etching step preferably being performed using carbon tetrafluoride (CF4) and coming after the step of etching the Ge1-xSnx.
This invention relates to semiconductor fabrication, specifically to methods for forming a Ge1-xSnx (germanium-tin) layer on a germanium (Ge) substrate. The problem addressed is achieving precise and selective etching of Ge without damaging the overlying Ge1-xSnx layer, which is critical for advanced semiconductor devices. The method involves depositing a Ge1-xSnx layer on a Ge substrate, where the Ge substrate has a free surface. The Ge1-xSnx layer is then etched, followed by a selective plasma-etching step targeting the underlying Ge layer. The selective etching is performed using carbon tetrafluoride (CF4) plasma, which preferentially removes Ge while leaving the Ge1-xSnx layer intact. This selectivity ensures that the Ge1-xSnx layer remains undamaged during the etching process, which is essential for maintaining device performance. The process is particularly useful in applications requiring precise control over layer thickness and composition, such as in photonic or electronic devices where Ge1-xSnx is used for its tunable bandgap properties. The selective etching step allows for fine-tuning of the Ge substrate without compromising the overlying Ge1-xSnx layer, enabling high-precision fabrication of advanced semiconductor structures.
10. A conduction channel made of Ge1-xSnx for a FET transistor, the conduction channel being obtained according to the method of claim 8, the carrier comprising an etch bottom, the etch bottom around the etched layer of Ge1-xSnx being smooth, i.e. exhibiting a surface roughness lower than 2 nanometres, preferably lower than 0.5 nanometre.
This invention relates to a semiconductor conduction channel for field-effect transistors (FETs) made from a germanium-tin (Ge1-xSnx) alloy. The technology addresses challenges in achieving high-performance FETs with low-power consumption and high carrier mobility, particularly for advanced logic and memory applications. The conduction channel is formed using a precise etching process that ensures a smooth surface finish, with a surface roughness below 2 nanometers, preferably below 0.5 nanometers. This smoothness is critical for minimizing defect-induced carrier scattering, which degrades device performance. The etching process involves selectively removing a Ge1-xSnx layer while maintaining a smooth etch bottom, which is essential for subsequent device fabrication steps. The smooth interface reduces interface trap states and improves carrier transport efficiency, leading to enhanced transistor performance. The Ge1-xSnx alloy is chosen for its tunable bandgap and high carrier mobility, making it suitable for high-speed and low-power electronic applications. The invention focuses on optimizing the material and fabrication process to achieve superior electrical properties in FETs.
11. The conduction channel made of Ge1-xSnx according to claim 10 forming horizontal fins arranged one above the other.
This invention relates to semiconductor devices, specifically a conduction channel made of a germanium-tin (Ge1-xSnx) alloy configured as horizontal fins stacked vertically. The Ge1-xSnx material is used to form a conduction channel with enhanced electrical properties, such as improved carrier mobility and compatibility with silicon-based semiconductor manufacturing processes. The horizontal fins are arranged in a stacked configuration, allowing for increased device density and improved performance in integrated circuits. The stacked fin structure enables efficient current flow while minimizing parasitic capacitance and resistance, which is particularly beneficial for high-speed and low-power electronic applications. The Ge1-xSnx alloy composition can be tuned by adjusting the tin (Sn) content to optimize electrical and optical properties for specific device requirements. This design is suitable for advanced transistors, photonic devices, and other semiconductor components where high performance and scalability are critical. The invention addresses challenges in semiconductor manufacturing by providing a compatible, high-performance material system that leverages existing fabrication techniques while offering superior electrical characteristics.
12. The conduction channel made of Ge1-xSnx according to claim 10 forming nanowires.
A semiconductor device includes a conduction channel composed of a germanium-tin (Ge1-xSnx) alloy, where the composition is tailored to achieve specific electrical and optical properties. The conduction channel is structured as nanowires, which provide enhanced surface-to-volume ratios and improved carrier mobility compared to bulk materials. The Ge1-xSnx alloy enables bandgap engineering, allowing the material to be tuned for applications in high-speed electronics, photodetectors, or laser diodes. The nanowire geometry further enhances these properties by increasing carrier confinement and reducing scattering, leading to improved device performance. This combination of material composition and nanostructuring addresses challenges in achieving high-performance semiconductor devices with tunable optical and electrical characteristics. The technology is particularly relevant for advanced optoelectronic and nanoelectronic applications where precise control over material properties is critical.
13. A FET transistor comprising a plurality of conduction channels made of Ge1-xSnx that are chosen according to claim 10.
This invention relates to field-effect transistors (FETs) incorporating multiple conduction channels made of a germanium-tin (Ge1-xSnx) alloy. The technology addresses the need for improved semiconductor materials with enhanced electron mobility and compatibility with existing silicon-based fabrication processes. Germanium-tin alloys offer tunable bandgap properties and higher carrier mobility compared to traditional silicon channels, making them suitable for high-performance and low-power electronic devices. The FET includes a plurality of conduction channels formed from Ge1-xSnx, where the composition (x) is selected to optimize electrical and optical properties. The channels are designed to enhance charge carrier transport, reducing resistance and improving switching speeds. The transistor structure may also include additional layers, such as barrier layers or strain-inducing layers, to further enhance performance. The Ge1-xSnx channels are integrated into a FET architecture, which may include source, drain, and gate regions, to form a functional transistor device. The composition and arrangement of the channels are optimized to achieve desired electrical characteristics, such as threshold voltage, on/off ratio, and leakage current. This invention aims to leverage the advantages of Ge1-xSnx alloys in semiconductor devices, providing a pathway for next-generation transistors with improved efficiency and performance. The use of multiple conduction channels allows for better control over device behavior and scalability in advanced semiconductor manufacturing.
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January 22, 2021
November 29, 2022
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