A data storage system includes a storage medium coupled to a storage controller via an electrical interface connected to a plurality of input/output (IO) pads of the storage medium. The storage medium receives a read or write instruction from the storage controller via the IO pads, associates the read or write instruction with memory cells of a first block of a first plane of a plurality of planes of the storage medium, and adjusts a word line voltage level or a source line voltage level for the first block of the first plane based on (i) a position of the first plane with respect to the IO pads of the storage medium and (ii) a position of the first block within the first plane.
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6. The data storage system of claim 1, wherein the driver adjustment circuitry is configured to cause the word line driver to adjust the word line voltage level by sending (i) an adjustment enable signal to the word line driver and (ii) an adjustment amount signal to the word line driver specifying an amount to increase the word line voltage level.
This invention relates to data storage systems, specifically non-volatile memory systems like flash memory, where precise control of word line voltages is critical for reliable data storage and retrieval. The problem addressed is the need to dynamically adjust word line voltage levels during read, program, or erase operations to compensate for variations in memory cell characteristics, such as threshold voltage shifts due to wear or process variations. Traditional systems often rely on fixed voltage levels, which can lead to read errors or reduced endurance. The invention describes a data storage system with a word line driver and driver adjustment circuitry. The word line driver supplies voltage to word lines connected to memory cells. The driver adjustment circuitry dynamically modifies the word line voltage level by sending two signals to the word line driver: an adjustment enable signal to initiate the adjustment and an adjustment amount signal specifying the exact voltage increase. This allows fine-grained control over word line voltages, improving read accuracy and extending memory lifespan. The adjustment can be applied during any memory operation, such as reading, programming, or erasing, to compensate for real-time variations in memory cell behavior. The system may also include additional circuitry to monitor memory cell conditions and determine the appropriate adjustment values. This approach enhances reliability and performance in non-volatile memory systems.
7. The data storage system of claim 1, wherein the driver adjustment circuitry is configured to cause the source line driver to adjust the source line voltage level by sending (i) an adjustment enable signal to the source line driver and (ii) an adjustment amount signal to the source line driver specifying an amount to decrease the source line voltage level.
A data storage system includes a source line driver that controls the voltage level of a source line in a memory array, such as a flash memory array. The system addresses the problem of maintaining optimal read and program operations by dynamically adjusting the source line voltage to compensate for variations in memory cell characteristics, temperature, or other operational conditions. The system includes driver adjustment circuitry that interfaces with the source line driver to modify the source line voltage level. The adjustment circuitry sends an adjustment enable signal to activate the voltage adjustment process and an adjustment amount signal to specify the exact decrease in voltage level. This allows precise control over the source line voltage, improving read and program accuracy while reducing power consumption and wear on the memory cells. The system ensures reliable data storage and retrieval by dynamically adapting to changing conditions in the memory array.
12. The method of claim 8, wherein adjusting the word line voltage level includes sending (i) an adjustment enable signal to the word line driver and (ii) an adjustment amount signal to the word line driver specifying an amount to increase the word line voltage level.
This invention relates to memory systems, specifically to methods for adjusting word line voltage levels in non-volatile memory devices to improve read or program operations. The problem addressed is the need for precise control of word line voltages to mitigate read disturbances, enhance data reliability, and optimize performance in memory operations. The method involves dynamically adjusting the voltage level applied to a word line in a memory array. The adjustment is performed by a word line driver, which receives two signals: an adjustment enable signal and an adjustment amount signal. The adjustment enable signal activates the voltage adjustment process, while the adjustment amount signal specifies the exact magnitude by which the word line voltage should be increased. This allows fine-tuned control over the voltage level, ensuring optimal conditions for memory operations. The method may be used in conjunction with other techniques, such as detecting read disturbances or monitoring memory cell degradation, to determine when and how much the word line voltage should be adjusted. By dynamically adjusting the voltage, the system can compensate for variations in memory cell characteristics, environmental factors, or wear, thereby improving data integrity and extending the lifespan of the memory device. The approach is particularly useful in high-density memory systems where precise voltage control is critical for reliable operation.
13. The method of claim 8, wherein adjusting the source line voltage level includes sending (i) an adjustment enable signal to the source line driver and (ii) an adjustment amount signal to the source line driver specifying an amount to decrease the source line voltage level.
This invention relates to memory systems, specifically to methods for adjusting source line voltage levels in non-volatile memory devices to improve performance and reliability. The problem addressed is the need to dynamically control source line voltage during memory operations to mitigate issues like read disturb, program disturb, and data retention errors, which can degrade memory reliability over time. The method involves adjusting the source line voltage level by sending two signals to a source line driver. First, an adjustment enable signal is transmitted to activate the adjustment process. Second, an adjustment amount signal is sent to specify the exact decrease in voltage level required. The source line driver then reduces the voltage accordingly. This adjustment can be applied during various memory operations, such as read, program, or erase cycles, to optimize performance and reduce errors. The source line driver is a component that regulates the voltage applied to the source lines of memory cells. By dynamically adjusting this voltage, the method helps maintain stable memory operations, particularly in high-density memory arrays where voltage fluctuations can cause data integrity issues. The adjustment process is precise, allowing for fine-tuned control over the source line voltage to meet specific operational requirements. This approach enhances memory reliability and extends the lifespan of non-volatile memory devices.
19. The data storage system of claim 14, wherein the means for adjusting the word line voltage level include means for sending (i) an adjustment enable signal to the word line driver and (ii) an adjustment amount signal to the word line driver specifying an amount to increase the word line voltage level.
This invention relates to data storage systems, specifically to a method for adjusting word line voltage levels in memory devices to improve read and write operations. The problem addressed is the need for precise control of word line voltages to ensure reliable data storage and retrieval, particularly in non-volatile memory such as flash memory, where variations in voltage can lead to errors or degraded performance. The system includes a word line driver that supplies voltage to word lines in a memory array. The invention provides a mechanism for dynamically adjusting the word line voltage level based on operational conditions. This adjustment is controlled by sending two signals to the word line driver: an adjustment enable signal, which activates the adjustment process, and an adjustment amount signal, which specifies the exact increase in voltage required. The adjustment amount signal ensures that the voltage is modified by a precise, predetermined value, allowing for fine-tuned control over memory operations. This feature is particularly useful in scenarios where environmental factors, wear, or manufacturing variations cause deviations in optimal voltage levels. By dynamically adjusting the word line voltage, the system can maintain accuracy and reliability in read and write operations, extending the lifespan of the memory device. The invention may be part of a larger control system that monitors memory performance and triggers adjustments as needed.
20. The data storage system of claim 14, wherein the means for adjusting the source line voltage level include means for sending (i) an adjustment enable signal to the source line driver and (ii) an adjustment amount signal to the source line driver specifying an amount to decrease the source line voltage level.
This invention relates to data storage systems, specifically those involving source line voltage adjustment to improve performance and reliability. The system addresses the problem of maintaining optimal voltage levels in memory operations, particularly in non-volatile memory such as flash memory, where improper source line voltage can lead to read disturbances, write errors, or reduced endurance. The system includes a source line driver configured to adjust the voltage level of a source line connected to memory cells. The adjustment mechanism involves sending an adjustment enable signal to activate the voltage modification and an adjustment amount signal to specify the exact reduction in voltage level. This allows precise control over the source line voltage, ensuring it remains within a safe operating range during read, write, or erase operations. The system may also include a controller that monitors memory cell conditions and determines when voltage adjustments are necessary, such as during high-temperature conditions or after prolonged usage, to prevent data corruption or premature wear. By dynamically adjusting the source line voltage, the system enhances memory reliability, reduces power consumption, and extends the lifespan of the storage device. The invention is particularly useful in high-density memory arrays where voltage fluctuations can have a significant impact on performance.
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June 16, 2021
December 6, 2022
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