This disclosure describes a memory cell array with enhanced read sensing margin. The memory cell array includes a write port and a read port being connected through first and second data storage lines. The memory cell array further includes multiple word lines and bit lines arranged in rows and columns such that the read port is coupled to a read word line, a read bit line, and a virtual ground. The read port includes a first transistor coupled to at least the read bit line and the virtual ground, a second transistor coupled to at least the first data storage line and the first transistor, a third transistor coupled to at least the second data storage line and the read word line, and a fourth transistor coupled at least the first data storage line and the read word line.
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2. The memory cell array of claim 1, wherein the write port is configured to store a data value, the first data storage line is configured to carry the data value to the read port, and the second data storage line is configured to carry a complement of the data value to the read port.
This invention relates to a memory cell array designed to improve data storage and retrieval efficiency. The memory cell array includes multiple memory cells, each with a write port for storing a data value and a read port for retrieving the data. The memory cell also features two data storage lines: a first line that carries the stored data value to the read port and a second line that carries the complement of the data value to the read port. This dual-line configuration ensures that both the data value and its complement are available at the read port, enhancing data integrity and enabling faster read operations. The use of complementary data lines helps reduce errors by providing redundancy and improving signal stability during read operations. This design is particularly useful in high-speed memory systems where accurate and efficient data retrieval is critical. The memory cell array is structured to optimize both write and read operations, ensuring reliable data storage and retrieval in electronic devices.
3. The memory cell array of claim 1, where in the virtual ground is operatively connected to the read word line through an inverter.
A memory cell array includes a plurality of memory cells arranged in rows and columns, where each memory cell is connected to a read word line and a virtual ground. The virtual ground is operatively connected to the read word line through an inverter. The inverter ensures that when the read word line is activated, the virtual ground is deactivated, preventing current leakage and improving read stability. This configuration allows for efficient read operations while minimizing power consumption and enhancing data integrity. The memory cells may be non-volatile, such as flash memory cells, where the read word line controls access to stored data during read operations. The inverter acts as a switching mechanism, ensuring proper isolation between the read word line and the virtual ground to avoid unintended current paths. This design is particularly useful in high-density memory arrays where minimizing leakage current is critical for performance and reliability. The inverter may be a CMOS inverter or another suitable logic gate, depending on the specific implementation. The overall structure enables precise control of read operations while maintaining low power consumption and high data retention.
4. The memory cell array of claim 1, wherein the first data storage line is connected to a gate terminal of the second transistor and a gate terminal of the fourth transistor.
A memory cell array includes a plurality of memory cells, each comprising a first transistor, a second transistor, a third transistor, and a fourth transistor. The first transistor is configured to store data by controlling current flow between a source terminal and a drain terminal. The second transistor is connected to a first data storage line and acts as a selection device to access the memory cell. The third transistor is connected to a second data storage line and provides an additional data storage or control function. The fourth transistor is connected to a third data storage line and may serve as a reference or auxiliary device for read or write operations. The first data storage line is connected to the gate terminals of both the second and fourth transistors. This configuration allows the first data storage line to control the operation of the second transistor for cell selection and the fourth transistor for auxiliary functions. The interconnection ensures coordinated control of multiple transistors within the memory cell, improving data access efficiency and reliability. The memory cell array is designed to enhance performance in high-density memory applications by optimizing transistor control and reducing signal interference.
5. The memory cell array of claim 1, wherein the second data storage line is connected to a gate terminal of the third transistor.
A memory cell array includes multiple memory cells arranged in rows and columns, where each memory cell comprises a first transistor and a second transistor. The first transistor is connected to a first data storage line, and the second transistor is connected to a second data storage line. The memory cell array further includes a third transistor, where the second data storage line is connected to a gate terminal of the third transistor. This configuration allows the second data storage line to control the operation of the third transistor, enabling data storage or retrieval in the memory cells. The third transistor may be used to selectively couple or decouple the memory cells to other circuit components, such as sense amplifiers or write drivers, based on the voltage or signal applied to the second data storage line. This design improves memory cell access efficiency and reduces power consumption by dynamically controlling the connection between memory cells and peripheral circuits. The memory cell array is particularly useful in high-density memory devices where precise control of data storage and retrieval is required.
6. The memory cell array of claim 1, wherein the read bit line is further coupled to an inverter and the output of the inverter is accessible for a memory read operation.
A memory cell array includes a plurality of memory cells arranged in rows and columns, where each memory cell is coupled to a word line and a bit line. The array further includes a read bit line that is selectively coupled to one or more bit lines of the memory cells during a read operation. The read bit line is also coupled to an inverter, and the output of the inverter is accessible for a memory read operation. This configuration allows the read bit line to provide a signal that is inverted by the inverter, making the output signal more suitable for further processing or interfacing with other circuit components. The inverter ensures that the read signal is properly conditioned, improving signal integrity and reliability during memory read operations. The memory cell array may be part of a larger memory device, such as a static random-access memory (SRAM) or dynamic random-access memory (DRAM), where efficient and accurate data retrieval is critical. The use of an inverter on the read bit line helps standardize the output signal, reducing the need for additional signal conditioning circuitry elsewhere in the system. This design enhances the overall performance and robustness of the memory read operation.
7. The memory cell array of claim 1, wherein the read word line is connected to a shared source/drain terminal of the third and the fourth transistors.
This memory cell array, designed for enhanced read sensing, includes a write port and a read port, which are connected via first and second data storage lines. The array further incorporates multiple word lines and bit lines. The read port is specifically coupled to a read word line, a read bit line, and a virtual ground. Within this read port: a first transistor connects to the read bit line and the virtual ground; a second transistor connects to the first data storage line and the first transistor; a third transistor connects to the second data storage line and the read word line; and a fourth transistor connects to the first data storage line and the read word line. A key feature is that the read word line is connected to a shared source/drain terminal common to both the third and the fourth transistors.
8. The memory cell array of claim 1, wherein a gate terminal of the first transistor is connected to a shared source/drain terminal of the second, third, and fourth transistors.
This invention relates to memory cell arrays, specifically addressing the challenge of efficiently integrating multiple transistors within a single memory cell to improve performance and reduce area. The memory cell array includes a first transistor and a second, third, and fourth transistors, where the gate terminal of the first transistor is connected to a shared source/drain terminal of the second, third, and fourth transistors. The first transistor functions as a storage element, while the second, third, and fourth transistors act as access or control transistors, enabling selective read/write operations. The shared connection between the gate of the first transistor and the source/drain terminals of the other transistors allows for compact layout and efficient signal routing, reducing parasitic capacitance and improving switching speed. This configuration enhances memory cell density and operational efficiency, making it suitable for high-performance memory applications. The design ensures reliable data storage and retrieval while minimizing power consumption and silicon area.
9. The memory cell array of claim 1, wherein the first transistor is connected to the read bit line through a source/drain terminal and connected to the virtual ground through another source/drain terminal.
This invention relates to memory cell arrays, specifically addressing the need for efficient data storage and retrieval in semiconductor memory devices. The memory cell array includes a first transistor that serves as a key component for read operations. The first transistor is connected to a read bit line through one of its source/drain terminals, enabling data to be read from the memory cell. The other source/drain terminal of the first transistor is connected to a virtual ground, which provides a stable reference potential during read operations. This configuration ensures reliable data sensing while minimizing power consumption and interference. The virtual ground connection helps isolate the memory cell from noise and fluctuations, improving read accuracy. The memory cell array may also include additional transistors or components to support write operations, data retention, and other memory functions. The overall design optimizes performance, scalability, and energy efficiency in memory devices.
12. The memory device of claim 10, wherein the first data storage line is connected to a gate terminal of a first transistor and a gate terminal of a second transistor in the read port of the first bit cell.
This invention relates to memory devices, specifically non-volatile memory architectures with improved read port configurations. The problem addressed is the need for efficient and reliable data access in memory cells, particularly in systems requiring high-speed read operations while maintaining low power consumption and compact design. The memory device includes a bit cell with a read port that comprises at least two transistors. The read port is connected to a first data storage line, which is linked to the gate terminals of both a first and a second transistor within the read port. This configuration enhances read performance by ensuring stable and controlled data retrieval. The first transistor may function as a pass transistor, while the second transistor may act as a pull-down device, working together to improve read margin and reduce susceptibility to noise. The memory device may also include a write port with additional transistors for data storage and modification, ensuring independent read and write operations. The overall design optimizes memory access speed, power efficiency, and reliability, making it suitable for applications requiring high-performance non-volatile storage.
13. The memory device of claim 12, wherein the second data storage line is connected to a gate terminal of a third transistor in the read port of the first bit cell.
This invention relates to memory devices, specifically non-volatile memory architectures with improved read port configurations. The problem addressed is enhancing read performance and reliability in memory cells by optimizing transistor connections in the read port. The memory device includes a first bit cell with a read port containing a third transistor. A second data storage line is directly connected to the gate terminal of this third transistor. This configuration allows for selective activation of the read port based on data stored in the memory cell, improving read accuracy and speed. The third transistor acts as a pass gate, controlling data flow from the memory cell to the read port during read operations. The second data storage line, which may be a word line or control line, enables precise timing and voltage control for the read operation. The memory cell may also include additional transistors for write and erase operations, with the read port being isolated from these functions to prevent interference. The direct connection between the second data storage line and the third transistor's gate ensures fast response times and minimizes power consumption during read cycles. This design is particularly useful in high-density memory arrays where efficient read operations are critical. The invention improves upon prior art by simplifying the read path and reducing the number of intermediate components, leading to faster and more reliable data retrieval.
14. The memory device of claim 10, wherein the read word line is connected to a shared source/drain terminal of first and second transistors in the read port of the first bit cell.
The invention relates to memory devices, specifically a memory device with an improved read port configuration for bit cells. The problem addressed is optimizing the read operation in memory cells, particularly in reducing power consumption and improving read performance. The memory device includes a bit cell with a read port that contains first and second transistors. The read word line is connected to a shared source/drain terminal of these transistors, allowing efficient read operations. The shared connection simplifies the circuit design and reduces the number of required connections, which can lower power consumption and improve reliability. The read port is designed to selectively access stored data in the bit cell while minimizing interference with other operations. The memory device may also include additional features such as a write port for modifying stored data and a storage element for retaining data. The overall design aims to enhance memory performance by optimizing the read path while maintaining compatibility with existing memory architectures.
15. The memory device of claim 10, wherein the read port of the first bit cell is connected to the read bit line through a source/drain terminal of a first transistor in the read port of the first bit cell and connected to the virtual ground through another source/drain terminal of the first transistor in the read port of the first bit cell.
This invention relates to memory devices, specifically addressing the design of bit cells with improved read port configurations. The problem being solved involves optimizing the electrical connections in memory cells to enhance read operations while maintaining efficient circuit design. The memory device includes a bit cell with a read port that connects to a read bit line and a virtual ground. The read port of the bit cell is implemented using a transistor, where one source/drain terminal of the transistor connects to the read bit line, and the other source/drain terminal connects to the virtual ground. This configuration ensures that during a read operation, the transistor in the read port can effectively route the signal from the bit cell to the read bit line while maintaining a stable reference voltage through the virtual ground. The transistor's placement and connections are optimized to minimize signal distortion and improve read accuracy. The design also ensures compatibility with high-density memory architectures by reducing the number of additional components required for the read path. This approach enhances read performance while maintaining low power consumption and compact layout.
16. The memory device of claim 15, wherein a gate terminal of the first transistor in the read port of the first bit cell is connected to a shared source/drain terminal of second, third, and fourth transistors in the read port of the first bit cell.
The invention relates to memory devices, specifically to a configuration of transistors in a read port of a bit cell to improve read performance and reduce power consumption. The problem addressed is optimizing the read circuitry in memory devices to enhance speed and efficiency while maintaining reliability. The memory device includes a bit cell with a read port comprising multiple transistors. A first transistor in the read port is connected to a shared source/drain terminal of three other transistors (second, third, and fourth transistors) within the same read port. This shared connection reduces the number of distinct nodes, simplifying the circuit and improving signal integrity during read operations. The shared terminal allows for faster signal propagation and lower power consumption by minimizing parasitic capacitance and resistance. The configuration ensures that the read port operates efficiently, providing quick access to stored data while maintaining low power dissipation. The invention is particularly useful in high-density memory arrays where minimizing transistor count and interconnect complexity is critical. By sharing the source/drain terminal among multiple transistors, the design reduces layout area and improves manufacturability. The shared connection also enhances noise immunity, ensuring reliable data retrieval even in noisy environments. This configuration is applicable to various memory technologies, including SRAM, DRAM, and emerging non-volatile memory devices.
17. The memory device of claim 10, wherein the read bit line is further coupled to an inverter and the output of the inverter is accessible for a memory read operation.
This invention relates to memory devices, specifically addressing the challenge of efficiently reading data from memory cells. The device includes a memory cell with a read bit line connected to an inverter, where the inverter's output provides a readable signal during a memory read operation. The memory cell may be part of a larger array, where each cell is accessed via a word line and a bit line. The read bit line is coupled to the memory cell to detect stored data, and the inverter converts the signal from the read bit line into a standardized output, simplifying data retrieval. This design ensures reliable and efficient read operations by leveraging the inverter to amplify and condition the signal before it is accessed. The memory device may also include additional components, such as a write bit line for storing data and a sense amplifier for enhancing signal integrity during read operations. The overall system enables fast and accurate data access, improving performance in memory-intensive applications.
19. The method of claim 18, wherein operating the memory cell array comprises passing the data value in the write port to the read port through a data storage line and a complementary data storage line.
A method for operating a memory cell array involves transferring data between a write port and a read port using a data storage line and a complementary data storage line. The memory cell array includes multiple memory cells, each with a write port for receiving data and a read port for outputting data. The method ensures that data written to the write port is passed to the read port through a pair of storage lines, one carrying the data value and the other carrying its complement. This approach enhances data integrity and reliability by using complementary signaling, which helps detect and correct errors during data transfer. The method is particularly useful in memory systems where maintaining accurate data transmission is critical, such as in high-performance computing or error-sensitive applications. The complementary storage lines provide redundancy, allowing for error detection and correction mechanisms to be implemented efficiently. This technique improves the robustness of memory operations by ensuring that data read from the read port matches the data written to the write port, reducing the risk of data corruption. The method is applicable to various memory technologies, including static random-access memory (SRAM) and other volatile or non-volatile memory types.
20. The method of claim 18, wherein setting the virtual ground comprises: setting the virtual ground to a logic value of ‘0’ in response to a selection of a bit cell of the memory cell array.
A method for managing virtual ground in a memory system addresses the challenge of efficiently controlling ground references in memory operations to improve performance and reliability. The method involves dynamically adjusting the virtual ground level based on memory cell selection to optimize read/write operations. Specifically, when a bit cell within the memory cell array is selected, the virtual ground is set to a logic value of ‘0’. This ensures stable and accurate data access by providing a consistent reference point during memory operations. The method may also include additional steps such as initializing the memory system, configuring memory parameters, and executing read or write operations. By dynamically setting the virtual ground to ‘0’ upon bit cell selection, the method enhances signal integrity and reduces noise, leading to more reliable memory access. This approach is particularly useful in high-density memory arrays where precise ground referencing is critical for maintaining data accuracy. The method may be implemented in various memory technologies, including but not limited to DRAM, SRAM, or flash memory, to improve overall system performance and reliability.
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September 18, 2020
December 20, 2022
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