A radio frequency (RF) transistor amplifier package includes a submount, and first and second leads extending from a first side of the submount. The first and second leads are configured to provide RF signal connections to one or more transistor dies on a surface of the submount. At least one rivet is attached to the surface of the submount between the first and second leads on the first side. One or more corners of the first side of the submount may be free of rivets. Related devices and associated RF leads and non-RF leads are also discussed.
Legal claims defining the scope of protection, as filed with the USPTO.
3. The RF transistor amplifier package of claim 2, wherein the isolation structure comprises a conductive element vertically protruding from the at least one rivet on the surface of the submount.
5. The RF transistor amplifier package of claim 4, wherein a spacing separating the first and second input leads is different than a spacing separating the first and second output leads.
8. The RF transistor amplifier package of claim 7, wherein the isolation structure comprises a conductive element vertically protruding from the surface of the submount between the first and second RF amplifier paths and connecting the at least one first rivet to the at least one second rivet.
9. The RF transistor amplifier package of claim 8, wherein the conductive element comprises at least one metal segment and/or at least one bond wire.
10. The RF transistor amplifier package of claim 1, wherein one or more corners of the first side of the submount are free of rivets.
11. The RF transistor amplifier package of claim 10, wherein the first lead and/or the second lead extends to the one or more corners of the first side of the submount.
16. The RF transistor amplifier package of claim 1, wherein the one or more transistor dies comprise a gallium nitride-based high electron mobility transistor (HEMT).
17. The RF transistor amplifier package of claim 1, wherein the one or more transistor dies comprise a silicon-based laterally diffused metal oxide semiconductor (LDMOS) transistor.
18. The RF transistor amplifier package of claim 1, wherein the one or more transistor dies are configured to operate in at least a portion of one or more of the 2.5-2.7 GHz, 3.4-4.2 GHz, or 5.1-5.8 GHz frequency bands.
19. The RF transistor amplifier package of claim 1, wherein the one or more transistor dies are configured to operate at frequencies above 10 GHz.
21. The RF transistor amplifier package of claim 20, wherein the first portion and the second portion of the one or more non-RF leads are separated from a plane of the surface of the submount by different first and second spacings thereabove, respectively.
23. The transistor amplifier package of claim 22, wherein the at least one lead is configured to provide radio frequency (RF) signal connections to the at least one transistor die.
24. The transistor amplifier package of claim 23, wherein the first spacing of the first portion of the at least one lead defines an impedance of at least a portion of an input or output matching circuit for the at least one transistor die, and wherein the second spacing of the second portion of the at least one lead defines a height corresponding to at least one external connection.
30. The transistor amplifier package of claim 22, wherein the at least one transistor die comprises a gallium nitride-based high electron mobility transistor (HEMT).
31. The transistor amplifier package of claim 22, wherein the at least one transistor die comprises a silicon-based laterally diffused metal oxide semiconductor (LDMOS) transistor.
32. The transistor amplifier package of claim 22, wherein the at least one transistor die is configured to operate in at least a portion of one or more of the 2.5-2.7 GHz, 3.4-4.2 GHz, or 5.1-5.8 GHz frequency bands.
33. The transistor amplifier package of claim 22, wherein the at least one transistor die is configured to operate at frequencies above 10 GHz.
34. The RF transistor amplifier package of claim 20, wherein the first lead and/or the second lead extends to the one or more corners of the first side of the submount.
38. The RF transistor amplifier package of claim 20, wherein the one or more transistor dies comprise a gallium nitride-based high electron mobility transistor (HEMT).
39. The RF transistor amplifier package of claim 20, wherein the one or more transistor dies comprise a silicon-based laterally diffused metal oxide semiconductor (LDMOS) transistor.
40. The RF transistor amplifier package of claim 20, wherein the one or more transistor dies are configured to operate in at least a portion of one or more of the 2.5-2.7 GHz, 3.4-4.2 GHz, or 5.1-5.8 GHz frequency bands.
41. The RF transistor amplifier package of claim 20, wherein the one or more transistor dies are configured to operate at frequencies above 10 GHz.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
June 26, 2020
February 14, 2023
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