A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate; a first conductive pattern on the substrate; a second conductive pattern on the substrate and spaced apart from the first conductive pattern; an air spacer between the first conductive pattern and the second conductive pattern; and a quantum dot pattern covering an upper part of the air spacer.
Legal claims defining the scope of protection, as filed with the USPTO.
4. The method for fabricating the semiconductor device of claim 1, further comprising forming a filling insulating film covering the quantum dot pattern.
8. The method for fabricating the semiconductor device of claim 1, wherein the quantum dot pattern includes at least one of silicon oxide quantum dots, silicon nitride quantum dots, polysilicon quantum dots, silicon germanium quantum dots, and combinations thereof.
12. The method for fabricating the semiconductor device of claim 9, further comprising, after forming the sacrificial spacer, forming a second conductive pattern spaced apart from the first conductive pattern by the sacrificial spacer, on the substrate.
14. The method for fabricating the semiconductor device of claim 9, wherein forming the sacrificial spacer includes sequentially forming a first spacer, the sacrificial spacer, and a second spacer on a side surface of the first conductive pattern.
15. The method for fabricating the semiconductor device of claim 14, wherein the first spacer and the second spacer includes silicon nitride.
16. The method for fabricating the semiconductor device of claim 9, wherein the capping pattern includes silicon nitride.
17. The method for fabricating the semiconductor device of claim 9, further comprising after forming the quantum dot pattern, forming a filling insulating film filling another portion of the first trench, on the quantum dot pattern.
18. The method for fabricating the semiconductor device of claim 9, wherein the quantum dot pattern includes at least one of silicon oxide quantum dots, silicon nitride quantum dots, polysilicon quantum dots, silicon germanium quantum dots, and combinations thereof.
20. The method for fabricating the semiconductor device of claim 19, further comprising, before forming the air spacer, forming a contact structure connected to the active region and disposed on both sides of the bit line structure.
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June 23, 2021
February 21, 2023
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