A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.
Legal claims defining the scope of protection, as filed with the USPTO.
2. The vapor phase epitaxial growth device according to claim 1, further comprising a heater arranged around the wafer holder, the first material gas supply pipe, the second material gas supply pipe, and the gas exhaust pipe.
5. The vapor phase epitaxial growth device according to claim 1, wherein the surface of the shower head has a material not containing silicon nor oxygen arranged thereon.
6. The vapor phase epitaxial growth device according to claim 1, wherein the surface of the shower head has a material containing tungsten arranged thereon.
10. The vapor phase epitaxial growth device according to claim 7, wherein the catalyst is a material containing tungsten.
12. The vapor phase epitaxial growth device according to claim 11, wherein the surface of the ring unit is covered with a catalyst capable of decomposing the second material gas by a catalytic effect.
13. The vapor phase epitaxial growth device according to claim 12, wherein the catalyst is a material containing tungsten.
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September 7, 2018
February 28, 2023
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