Methods for activating a p-type dopant in a group III-Nitride semiconductor are provided. In embodiments, such a method comprises annealing, in situ, a film of a group III-Nitride semiconductor comprising a p-type dopant formed via metalorganic chemical vapor deposition (MOCVD) at a first temperature for a first period of time under an atmosphere comprising NH3 and N2; and cooling, in situ, the film of the group III-Nitride semiconductor to a second temperature that is lower than the first temperature under an atmosphere comprising N2 in the absence of NH3, to form an activated p-type group III-Nitride semiconductor film.
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2. The method of claim 1, wherein the group III element is Ga, Al, In, or combinations thereof.
3. The method of claim 1, wherein the p-type dopant is Mg.
4. The method of claim 1, wherein the first temperature is in a range of from 900° C. to 1100° C. and the first period of time is in a range of from 30 seconds to 5 minutes.
6. The method of claim 1, wherein the second temperature is in a range of from 750° C. to 650° C.
7. The method of claim 1, wherein the atmosphere during step (b) consists of N2.
8. The method of claim 1, wherein step (b) comprises cooling to an intermediate temperature followed by cooling from the intermediate temperature to the second temperature over a second period of time.
9. The method of claim 8, wherein the atmosphere during cooling from the intermediate temperature to the second temperature consists of N2.
10. The method of claim 5, wherein the atmosphere during step (a) is free of H2.
12. The method of claim 11, wherein the first temperature is in a range of from 900° C. to 1100° C. and the first period of time is in a range of from 30 seconds to 5 minutes.
13. The method of claim 11, wherein the atmosphere during step (c) consists of N2.
14. The method of claim 11, wherein the atmosphere during step (b) and step (c) consists of N2.
16. The method of claim 11, wherein the method consists of steps (a)-(c), followed by cooling, in situ, the film of the group III-Nitride semiconductor from the second temperature to room temperature.
19. The method of claim 18, wherein the p-type dopant is Mg and step (c) comprises cooling to an intermediate temperature that is lower than the first temperature followed by cooling from the intermediate temperature to the second temperature over a second period of time.
20. The method of claim 18, wherein the first temperature is in a range of from 900° C. to 1100° C.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
November 18, 2020
March 7, 2023
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