According to one or more embodiments, a semiconductor device includes a mounting substrate and a semiconductor element on the mounting substrate. The mounting substrate has a first electrode pad and a second electrode pad. The semiconductor element has a supporting substrate, third and fourth electrode pads, first slits and second slits. The third and fourth electrode pads are provided on a first surface of the supporting substrate facing the mounting substrate. The first slits are provided both in the supporting substrate and in the third electrode pad. The second slits are provided both in the supporting substrate and in the fourth electrode pad. The semiconductor device further includes a first conductive bonding agent that connects the first electrode pad to the third electrode pad and a second conductive bonding agent that connects the second electrode pad to the fourth electrode pad.
Legal claims defining the scope of protection, as filed with the USPTO.
2. The semiconductor device according to claim 1, wherein each of the first and second slits is provided extending from an outer periphery of the semiconductor element toward a central region of the supporting substrate.
6. The semiconductor device according to claim 1, wherein a length of each of the first slits is at least four times as large as a height of the first slits and at least four times as large as a width of the first slits.
7. The semiconductor device according to claim 1, wherein a length of each of the second slits is at least four times as large as a height of the second slits and at least four times as large as a width of the second slits.
8. The semiconductor device according to claim 1, wherein the first slits and the second slits do not extend into the central region of the supporting substrate.
10. The semiconductor device according to claim 9, wherein a length of each of the first slits is less than a distance from a first side surface of the semiconductor element in which an opening of each of the first slits is provided in the switching element to a second side surface of the semiconductor element opposite to the first side surface.
11. The semiconductor device according to claim 9, wherein the first and second conductive bonding agents do not overlap with the light-receiving element.
15. The semiconductor device according to claim 12, wherein a length of the first slit is at least four times as large as a height of the first slit and at least four times as large as a width of the first slit.
16. The semiconductor device according to claim 12, wherein a length of the second slit is at least four times as large as a height of the second slit and at least four times as large as a width of the second slit.
17. The semiconductor device according to claim 12, wherein the semiconductor element is a photorelay.
19. The semiconductor device according to claim 18, wherein each of the first and second slits is provided extending from an outer periphery of the semiconductor element toward a central region of the supporting substrate.
23. The semiconductor device according to claim 18, wherein a length of each of the first slits is at least four times as large as a height of the first slits and at least four times as large as a width of the first slits.
24. The semiconductor device according to claim 18, wherein a length of each of the second slits is at least four times as large as a height of the second slits and at least four times as large as a width of the second slits.
25. The semiconductor device according to claim 18, wherein the first slits and the second slits do not extend into the central region of the supporting substrate.
26. The semiconductor device according to claim 18, wherein a length of each of the first slits is less than a distance from a first side surface of the semiconductor element in which an opening of each of the first slits is provided in the switching element to a second side surface of the semiconductor element opposite to the first side surface.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 2, 2021
March 21, 2023
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