A system and method comprising the steps of: depositing a first electrode metal on an insulating substrate or layer; creating a trench component, in which said trench component comprises a section of said first electrode metal or both first electrode metal and insulating substrate or layer with a depth based on at least one of, a molecular device element, a trenched bottom electrode, and a liftoff molecular device (TBELMD) to be produced; insulating said first electrode metal from a predetermined material deposited in said trench component; and depositing a second electrode metal on said predetermined material deposited in said trench component.
Legal claims defining the scope of protection, as filed with the USPTO.
2. The method of claim 1, wherein the step of forming said trench component comprises forming said trench component through said first electrode metal and a portion of said insulating substrate or layer.
3. The method of claim 2, further comprising a step of depositing a gate electrode material in said trench component of said portion of said insulating substrate or layer, wherein the depth of said trench component has a depth based on said TBELMD.
4. The method of claim 3, wherein a thickness of said gate electrode material and said insulating component is approximately more than the depth of said trench component, wherein said thickness is based on said TBELMD to be produced.
5. The method of claim 4, further comprising a step of engaging said first electrode metal and second electrode metal with a molecular bridge.
6. The method of claim 1, further comprising a step of depositing a gate electrode material in said trench component of said first electrode metal, wherein the depth of said trench component has a depth based on said TBELMD.
7. The method of claim 6, further comprising a step of oxidizing a surface portion of said first electrode metal to form said insulating component.
9. The method of claim 8, further comprising a step of producing a tunnel junction having at least one exposed side edge, from the first electrode metal, the insulating component, the second insulator material, and the second electrode metal.
10. The method of claim 9, in which said molecular bridge comprises at least a molecule core, at least two tethers, and at least two thiol anchoring compounds.
12. The method of claim 10, in which said step of engaging said first electrode metal and second electrode metal with said molecular bridge comprises a step of bonding a first end portion of said at least two thiol anchoring compounds to said first electrode metal and bonding a second end portion of said at least two thiol anchoring compounds to said second electrode metal.
13. The method of claim 1, further comprising a step of forming a second insulating layer between said second electrode metal and a gate electrode.
14. The method of claim 1, further comprising a step of depositing a second insulator material above a gate electrode material, wherein said second insulator material is configured to separate said gate electrode material from said second electrode metal.
18. The system of claim 17, wherein said first insulator component comprises an oxidized surface portion of said bottom electrode metal.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 25, 2020
April 4, 2023
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