A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.
Legal claims defining the scope of protection, as filed with the USPTO.
2. The display device according to claim 1, wherein a second electrode of the capacitor is electrically connected to the second wiring.
4. The display device according to claim 1, wherein the crystalline portion is included in the channel of the one of the first transistor and the second transistor.
5. The display device according to claim 1, wherein the plurality of circumferentially distributed spots are observable in a measurement area greater than or equal to an area with a diameter of 5 nmφ and less than or equal to an area with a diameter of 10 nmφ in the nanobeam electron diffraction pattern of a cross-section of the oxide semiconductor layer.
7. The display device according to claim 1, wherein an atomic ratio of indium, gallium, and zinc in the oxide semiconductor layer is 1:1:1.
8. The display device according to claim 1, wherein the gate electrode has a tapered side surface.
10. The display device according to claim 9, wherein a second electrode of the capacitor is electrically connected to the second wiring.
12. The display device according to claim 9, wherein the crystalline portion is included in the channel of the one of the first transistor and the second transistor.
13. The display device according to claim 9, wherein the plurality of circumferentially distributed spots are observable in a measurement area greater than or equal to an area with a diameter of 5 nmφ and less than or equal to an area with a diameter of 10 nmφ in the nanobeam electron diffraction pattern of a cross-section of the oxide semiconductor layer.
15. The display device according to claim 9, wherein an atomic ratio of indium, gallium, and zinc in the oxide semiconductor layer is 1:1:1.
16. The display device according to claim 9, wherein the gate electrode has a tapered side surface.
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January 8, 2021
May 16, 2023
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