According to one embodiment, a magnetic memory device includes a first conductor extending along a first direction, a second conductor extending along a second direction and above the first conductor, and a first layer stack provided between the first conductor and the second conductor and including a first magnetoresistance effect element. The first layer stack has a rectangular shape along a stack surface of the first layer stack. The rectangular shape of the first layer stack has a side intersecting with both the first direction and the second direction.
Legal claims defining the scope of protection, as filed with the USPTO.
3. The device of claim 2, wherein the first side of the rectangular shape of the first layer stack is parallel to the third side of the rectangular shape of the second layer stack.
5. The device of claim 4, wherein the first side of the rectangular shape of the first layer stack is parallel to the fifth side of the rectangular shape of the third layer stack.
7. The device of claim 2, wherein a distance between the first layer stack and the second layer stack is at most 50 nm.
8. The device of claim 7, wherein the first side of the rectangular shape in the nonmagnetic layer has a length of 20 nm or less.
9. The device of claim 8, wherein the nonmagnetic layer includes an oxide of magnesium (Mg).
10. The device of claim 9, wherein the first ferromagnetic layer and the second ferromagnetic layer include at least one element selected from iron (Fe), cobalt (Co), and nickel (Ni).
12. The device of claim 11, wherein the first resistance value is lower than the second resistance value.
13. The device of claim 1, wherein the first layer stack further includes a switching element coupled in series to the first magnetoresistance effect element.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
March 11, 2021
May 23, 2023
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