In a described example, an integrated circuit includes a capacitor first plate; a dielectric stack over the capacitor first plate comprising silicon nitride and silicon dioxide with a capacitance quadratic voltage coefficient less than 0.5 ppm/V2; and a capacitor second plate over the dielectric stack.
Legal claims defining the scope of protection, as filed with the USPTO.
2. The integrated circuit of claim 1, wherein the dielectric stack comprises a silicon nitride layer between a first silicon dioxide layer and a second silicon dioxide layer.
3. The integrated circuit of claim 2, wherein a thickness of the first silicon dioxide layer and a thickness of the second silicon dioxide layer are about equal and are about half a thickness of the silicon nitride layer.
4. The integrated circuit of claim 1, wherein the dielectric stack comprises a silicon dioxide layer between a first silicon nitride layer and a second silicon nitride layer.
5. The integrated circuit of claim 4, wherein a thickness of the first silicon nitride layer, a thickness of the second silicon nitride layer, and a thickness of the silicon dioxide layer are approximately equal.
6. The integrated circuit of claim 1, wherein an atomic hydrogen content of the silicon nitride of the dielectric stack is less than 25%.
7. The integrated circuit of claim 1, wherein an atomic hydrogen content of the silicon nitride of the dielectric stack is less than 20%.
8. The integrated circuit of claim 1, wherein the capacitor first plate is one selected from silicided polysilicon and a metal.
9. The integrated circuit of claim 1, wherein the integrated circuit is an analog to digital converter.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
February 22, 2021
June 6, 2023
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