Integrated photonics including waveguiding material

2. The photonic structure of claim 1, wherein each of the first photonic layer and the second photonic layer is formed of a waveguiding material selected from the group consisting of crystalline silicon, poly-crystalline silicon, amorphous silicon, silicon nitride, and silicon oxynitride.

3. The photonic structure of claim 1, wherein the distinct first photonic layer and the distinct second photonic layer are each formed of a different waveguiding material.

4. The photonic structure of claim 3, wherein the first photonic layer and the second photonic layer are separately formed of a different waveguiding material selected from the group consisting of crystalline silicon, poly-crystalline silicon, amorphous silicon, silicon nitride, and silicon oxynitride.

5. The photonic structure of claim 1, wherein the plurality of photonic layers further including include a third photonic layer and a fourth photonic layer.

6. The photonic structure of claim 5, wherein the second photonic layer, the third photonic layer and the fourth photonic layer is formed at a different elevation on the substrate.

7. The photonic structure of claim 1, wherein a bottom of the first photonic layer and a bottom of the second photonic layer are formed at a common elevation on the substrate.

8. The photonic structure of claim 1, wherein the first photonic layer is formed on a first dielectric layer, and wherein the second photonic layer is formed on a second dielectric layer, the second dielectric layer formed on the first dielectric layer.

9. The photonic structure of claim 1, wherein the first photonic layer is formed of silicon nitride, and wherein the second photonic layer is formed of a material selected from the group consisting of amorphous silicon or polycrystalline silicon.

11. The photonic structure of claim 10, wherein each of the first photonic layer and the second photonic layer is formed of a waveguiding material selected from the group consisting of crystalline silicon, poly-crystalline silicon, amorphous silicon, silicon nitride, and silicon oxynitride.

12. The photonic structure of claim 10, wherein the distinct first photonic layer and the distinct second photonic layer are each formed of a different waveguiding material.

13. The photonic structure of claim 12, wherein the first photonic layer and the second photonic layer are separately formed of a different waveguiding material selected from the group consisting of crystalline silicon, poly-crystalline silicon, amorphous silicon, silicon nitride, and silicon oxynitride.

14. The photonic structure of claim 10, wherein the plurality of photonic layers further including a third photonic layer and a fourth photonic layer.

15. The photonic structure of claim 14, wherein the each of the second photonic layer, the third photonic layer and the fourth photonic layer is formed at a different elevation on the substrate.

16. The photonic structure of claim 10, wherein the first photonic layer is formed of silicon nitride, and wherein the second photonic layer is formed of a material selected from the group consisting of amorphous silicon or polycrystalline silicon.

18. The photonic structure of claim 17, wherein the one or more photonics means further formed from patterning.

19. The photonic structure of claim 18, wherein the waveguiding means of one or more of the first photonic layer or the second photonic layer comprises a material selected from the group consisting of crystalline silicon, poly-crystalline silicon, amorphous silicon, silicon nitride, and silicon oxynitride.

20. The photonic structure of claim 17, wherein the distinct first photonic layer and the distinct second photonic layer are each formed of a different waveguiding means.

21. The photonic structure of claim 20, wherein the first photonic layer and the second photonic layer are separately formed of a different waveguiding means selected from a material in the group consisting of crystalline silicon, poly-crystalline silicon, amorphous silicon, silicon nitride, and silicon oxynitride.