Structures and methods for low temperature bonding using nanoparticles

2. The method of claim 1, wherein the electrically conductive nanoparticles are disposed on at least one receiving surface by exposing the at least one receiving surface to an electrolytic bath at a current density greater than the mass transport limiting current density of the electrolytic bath.

3. The method of claim 1, wherein at least one of the first and second conductive elements comprises an electrically conductive pad, or an electrically conductive trace.

4. The method of claim 1, wherein, before the bonding of the first surface with the major surface, the electrically conductive nanoparticles are disposed on the top surface of both of the first and second electrically conductive elements.

5. The method of claim 4, wherein, before the bonding of the first surface with the major surface, the conductive nanoparticles include first and second layers of conductive nanoparticles overlying each top surface, the first layer of conductive nanoparticles disposed on the respective top surface and the second layer of conductive nanoparticles disposed on the first layer of conductive nanoparticles, the second layer of conductive nanoparticles comprising at least one material different than at least one material comprising the first layer of conductive nanoparticles.

6. The method of claim 5, wherein, before the bonding of the first surface with the major surface, the conductive nanoparticles on each top surface include a third layer of conductive nanoparticles formed on the respective second layer of conductive nanoparticles, the third layer of conductive nanoparticles comprising at least one material different than the at least one material comprising the second layer of conductive nanoparticles, the second layer of conductive nanoparticles including a barrier metal configured to prevent metal of the third layer of conductive nanoparticles from penetrating into the first layer of conductive nanoparticles.

7. The method of claim 1, wherein, before the bonding of the first surface with the major surface, the electrically conductive nanoparticles are disposed on the top surface of one of the first or second electrically conductive elements.

8. The method of claim 1, wherein the dielectric material at the first surface and the major surface each include a B-stage material layer that is not fully cured, and during the elevating of the temperature, the B-stage material layers are fully cured.

9. The method of claim 1, wherein each metallurgical joint includes solder extending into microvoids located between at least some of the conductive nanoparticles, each microvoid having a maximum width below 0.5 microns.

10. The method of claim 1, further comprising providing a barrier material between the first conductive element and the conductive nanoparticles prior to the juxtaposing.

11. The method of claim 1, wherein top surface of the first conductive element extends between sidewalls of a recess formed in the first surface of the first substrate.

13. The method of claim 12, wherein the electrically conductive nanoparticles are deposited by an electrolytic bath at a current density greater than the mass transport limiting current density of the electrolytic bath.

14. The method of claim 12, further comprising depositing another barrier material over the first conductive element prior to the juxtaposing.

15. The method of claim 14, wherein, before the bonding of the first surface with the major surface, the conductive nanoparticles include first and second layers of conductive nanoparticles overlying each top surface, the first layer of conductive nanoparticles disposed on the respective top surface and the second layer of conductive nanoparticles disposed on the first layer of conductive nanoparticles, the second layer of conductive nanoparticles comprising at least one material different than at least one material comprising the first layer of conductive nanoparticles, one of the first and second layers of conductive nanoparticles comprising the barrier material and the second barrier material.

16. The method of claim 15, wherein, before the bonding of the first surface with the major surface, the conductive nanoparticles on each top surface include a third layer of conductive nanoparticles formed on the respective second layer of conductive nanoparticles, the third layer of conductive nanoparticles comprising at least one material different than the at least one material comprising the second layer of conductive nanoparticles, the second layer of conductive nanoparticles comprising the barrier material and configured to prevent metal of the third layer of conductive nanoparticles from penetrating into the first layer of conductive nanoparticles.

17. The method of claim 12, wherein, before the bonding of the first surface with the major surface, the electrically conductive nanoparticles are disposed over the top surface of one of the first or second electrically conductive elements.

18. The method of claim 12, wherein the dielectric material at the first surface and the major surface each include a B-stage material layer that is not fully cured, and during the elevating of the temperature, the B-stage material layers are fully cured.

20. The method of claim 19, wherein both of the substrates of the first component and the second component has the metal element extending in the respective plane in the first and second transverse directions within the respective substrate, the metal element of the first component comprises traces extending in the first direction, and the metal element of the second component comprises traces extending in the second direction.

21. The method of claim 19, further comprising directly bonding the dielectric material of the first surface with the dielectric material of the major surface.

22. The method of claim 19, wherein the top surface of the first conductive element is recessed below the first surface of the first substrate, and the top surface of the second conductive element is recessed below the major surface of the second substrate.