Post-CMP cleaning composition for germanium-containing substrate

2. The method of claim 1, wherein the oligomeric or polymeric polyamine comprises diethylenediamine, triethylenetetramine, tetraethylenepentamine, polyethyleneimine or polyvinyl amine.

3. The method of claim 1, wherein the oligomeric or polymeric polyamine comprises one or more hydroxyl functional groups.

4. The method of claim 1, wherein the oligomeric or polymeric polyamine is a primary amine, a secondary amine, a tertiary amine or a quaternary amine having at least two amino groups.

6. The method of claim 5, wherein the first fin comprises silicon, and the second fin comprises SiGe.

7. The method of claim 5, wherein the oligomeric or polymeric polyamine comprises diethylenediamine, triethylenetetramine, tetraethylenepentamine, polyethyleneimine or polyvinyl amine.

8. The method of claim 5, wherein the oligomeric or polymeric polyamine comprises one or more hydroxyl functional groups.

9. The method of claim 5, further comprising cleaning the surfaces of the first fin and the second fin using deionized water.

10. The method of claim 1, wherein the cleaning composition further comprises a solvent.

12. The method of claim 11, wherein the oligomeric or polymeric polyamine comprises diethylenediamine, triethylenetetramine, tetraethylenepentamine, polyethyleneimine or polyvinyl amine.

13. The method of claim 11, wherein the at least one wetting agent comprises an anionic, cationic, non-ionic or zwitterionic surfactant.

14. The method of claim 11, wherein the pH adjusting agent comprises an organic acid selected from C1-C6 alkyl carboxylic acid, nitric acid, sulfuric acid and C1-C6 alkyl sulfonic acid.

15. The method of claim 11, wherein the first fin comprises silicon, and the second fin comprises a Ge-containing semiconductor material.

17. The method of claim 16, wherein removing the contaminants generated by the CMP process from the top surfaces of the plurality of fins and the isolation structures further comprises rinsing the top surfaces of the plurality of fins and the isolation structures with water.

18. The method of claim 11, wherein the top surfaces of the plurality of fins have a surface roughness less than 20 nm after cleaning with the cleaning composition.

20. The method of claim 11, wherein the isolation structures comprise silicon oxide, silicon nitride or silicon oxynitride.