Single word line gain cell with complementary read write channel

3. The memory device of claim 2, wherein the conductive material includes metal.

4. The memory device of claim 1, wherein the second material and the semiconductor material have different conductivity types.

5. The memory device of claim 1, wherein the second material includes semiconducting oxide material.

7. The memory device of claim 6, wherein the first channel portion and the second channel portion include different materials.

8. The memory device of claim 6, wherein the first channel portion includes p-type polysilicon, and the second channel portion includes gallium phosphide.

9. The memory device of claim 6, wherein the second channel portion includes n-type semiconducting oxide material.

10. The memory device of claim 6, wherein the conductive shield includes metal.

11. The memory device of claim 6, wherein the first and second transistors have different threshold voltages.

12. The memory device of claim 6, wherein the second transistor has a threshold voltage greater than a threshold voltage of the first transistor.

13. The memory device of claim 6, wherein a gate of the first transistor and a gate of the second transistor are part of the access line.

14. The memory device of claim 6, wherein the access line includes a first portion and a second portion opposite the first portion, the first portion overlapping the at least part of each of the first channel portion and the second channel portion, and the second portion overlapping the at least an additional part of each of the first channel portion and the second channel portion.

15. The memory device of claim 6, wherein the second channel portion includes at least one of zinc tin oxide (ZTO), indium zinc oxide (IZO), zinc oxide (ZnOx), indium gallium zinc oxide (IGZO), indium gallium silicon oxide (IGSO), indium oxide (InOx, In2O3), tin oxide (SnO2), titanium oxide (TiOx), zinc oxide nitride (ZnxOyNz), magnesium zinc oxide (MgxZnyOz), indium zinc oxide (InxZnyOz), indium gallium zinc oxide (InxGayZnzOa), zirconium indium zinc oxide (ZrxInyZnzOa), hafnium indium zinc oxide (HfxInyZnzOa), tin indium zinc oxide (SnxInyZnzOa), aluminum tin indium zinc oxide (AlxSnyInzZnaOd), silicon indium zinc oxide (SixInyZnzOa), zinc tin oxide (ZnxSnyOz), aluminum zinc tin oxide (AlxZnySnzOa), gallium zinc tin oxide (GaxZnySnzOa), zirconium zinc tin oxide (ZrxZnySnzOa), indium gallium silicon oxide (InGaSiO), and gallium phosphide (GaP).