Method for decreasing cool down time with heated system for semiconductor manufacturing equipment

2. The workpiece processing system of claim 1, wherein the controller is configured to selectively decrease the power input to the heater apparatus from a first power associated with the process temperature to a second power associated with the equipment-safe temperature concurrent with the cooling of the heated apparatus from the process temperature to the equipment-safe temperature.

3. The workpiece processing system of claim 2, wherein the first power generally maintains the process temperature of the heated apparatus, and wherein the second power comprises approximately zero power input to the heater apparatus.

4. The workpiece processing system of claim 2, wherein the controller is configured to decrease of the power input to the heater apparatus from the first power to the second power based, at least in part, on the temperature of the heated apparatus.

5. The workpiece processing system of claim 2, wherein the cooling of the heated apparatus from the process temperature to the equipment-safe temperature is predominantly based on thermal radiation to the chamber, and wherein the cooling of the heated apparatus from the equipment-safe temperature to the personnel-safe temperature is predominantly based on thermal conduction and convection to the purge gas.

6. The workpiece processing system of claim 1, wherein the chamber further comprises an access port selectively configured in one of a closed position and an open position, wherein in the closed position, the access port generally isolates the chamber volume from an external environment, and wherein in the open position, the access port exposes the chamber volume to the external environment, wherein the controller is further configured to selectively control an operation of the access port to be in the closed position and open position based, at least in part, on the temperature of a workpiece support.

7. The workpiece processing system of claim 6, further comprising a lockout apparatus, wherein the controller is configured to selectively prevent the access port from being configured in the open position via the lockout apparatus when the temperature of the workpiece support is greater than an operator-safe temperature.

8. The workpiece processing system of claim 6, wherein the access port is configured to provide access to an operator to physically contact the heated apparatus within the chamber volume from the external environment when the access port is in the open position.

9. The workpiece processing system of claim 1, wherein the purge gas valve comprises an automated valve, wherein the controller is configured to open the purge gas valve once the temperature is less than or equal to the equipment-safe temperature, thereby flowing the purge gas into the chamber volume.

10. The workpiece processing system of claim 9, wherein the controller is further configured to selectively vary the flow of the purge gas based on the temperature of the heated apparatus.

11. The workpiece processing system of claim 1, wherein the purge gas valve comprises a manual valve, wherein the controller is configured to provide an indicator to an operator that the temperature is less than or equal to the equipment-safe temperature.

12. The workpiece processing system of claim 1, wherein the process temperature ranges between approximately 200 C and approximately 1500 C, wherein the equipment-safe temperature is approximately 200 C, and wherein the personal-safe temperature is approximately 60 C.

13. The workpiece processing system of claim 1, further comprising an ion implantation system, wherein the chamber comprises one of a load lock chamber and a process chamber, and wherein the heated apparatus comprises a workpiece support configured to selectively support and heat a workpiece.

14. The workpiece processing system of claim 13, wherein the workpiece support comprises an electrostatic chuck.

15. The workpiece processing system of claim 1, wherein the temperature sensor comprises one or more of a thermocouple and an RTD.

16. The workpiece processing system of claim 1, wherein the controller is further configured to selectively vary a flow of the purge gas from the purge gas port based on the temperature of the heated apparatus.