Integrated circuit having a resistor layer partially overlapping endcaps

2. The semiconductor device of claim 1, wherein an upper surface of the first end-cap has an indent, wherein the second dielectric layer extends along a sidewall of the indent.

3. The semiconductor device of claim 1, wherein the first dielectric layer extends over an upper surface of the first conductive feature.

4. The semiconductor device of claim 1, wherein the first dielectric layer extends along a sidewall of the first conductive feature.

5. The semiconductor device of claim 1, wherein the resistor layer directly contacts the first end-cap, the second end-cap, and an upper surface of the first dielectric layer.

6. The semiconductor device of claim 5, wherein a lower surface of the resistor layer is planar.

7. The semiconductor device of claim 1, wherein the resistor layer has a thickness in a range from about 10 Å to about 1,000 Å.

10. The semiconductor device of claim 8, wherein a thickness of the first end-cap closest to the second end-cap is greater than a thickness of the first end-cap furthest from the second end-cap.

11. The semiconductor device of claim 8, wherein a first portion of the first dielectric layer extends along a first sidewall of the first end-cap, wherein a second portion of the first dielectric layer extends along a second sidewall of the first end-cap, wherein an upper surface of the first portion is higher than an upper surface of the second portion.

13. The semiconductor device of claim 12, wherein the resistor layer comprises a silicon chromium (SiCr) layer, a tantalum nitride (TaN) layer, or a nickel chromium (NiCr) layer.

14. The semiconductor device of claim 8, wherein an upper surface of the first end-cap is level with an upper surface of the first dielectric layer.

17. The semiconductor device of claim 15, further comprising a third interconnect pad in the first dielectric layer, wherein an upper surface of the third interconnect pad is level with an upper surface of a second portion of the upper surface of the first end-cap, wherein the second portion of the upper surface of the first end-cap is lower than the first portion of the upper surface of the first end-cap.

18. The semiconductor device of claim 15, wherein the first dielectric layer comprises SiO2, a low-k dielectric material having k less than 3.5, and an ELK dielectric material having a dielectric constant k less than 30.0.

19. The semiconductor device of claim 15, wherein the first dielectric layer comprises SiO2, undoped silica glass (USG), phosphor doped silicate glass (PSG), fluorine doped silicate glass (FSG), a boron doped silicate glass (BSG) layer, or a boron phosphorous-doped silicate glass (BPSG).

20. The semiconductor device of claim 15, wherein an upper surface of the first portion of the first dielectric layer is level with an upper surface of the first end-cap.