Method of manufacturing semiconductor device

2. The method of claim 1, further comprising curing the release film before the removing of the release film.

3. The method of claim 2, wherein the curing of the release film is performed by a reflow.

4. The method of claim 1, wherein the release film comprises an adhesive material.

5. The method of claim 4, wherein the release film comprises epoxy resin.

6. The method of claim 1, wherein the release film is removed when the solder bracing material is partially cured.

7. The method of claim 1, wherein the rough surface has a line roughness (Ra) greater than about 1.3 μm is formed.

8. The method of claim 1, wherein the substrate further comprises a die.

10. The method of claim 9, wherein the release film comprises an adhesive material.

11. The method of claim 9, wherein the solder bracing material is in contact with the substrate, the pad and the conductive bump.

12. The method of claim 9, wherein a portion of the conductive bump is exposed though the solder bracing material.

13. The method of claim 12, wherein the release film is in contact with the solder bracing material and the portion of the conductive bump exposed through the solder bracing material.

14. The method of claim 9, wherein a line roughness (Ra) of the rough surface of the solder bracing material is greater than about 1.3 μm.

15. The method of claim 9, wherein the substrate further comprises a die and a redistribution layer (RDL).

17. The method of claim 16, wherein the rough interface is coupled to the conductive bump.

18. The method of claim 16, further comprising curing the release film and the solder bracing material.

19. The method of claim 18, wherein the removing of the release film is performed when the solder bracing material is partially cured.

20. The method of claim 16, wherein a line roughness (Ra) of the rough surface of the solder bracing material is greater than about 1.3 μm.