Semiconductor device with sidewall interconnection structure, method of manufacturing the same, and electronic apparatus

3. The method according to claim 2, wherein high-density plasma deposition is performed to form the preliminary mask layer.

7. The method according to claim 6, wherein the filler comprises a material that is capable of being etched and is insoluble in a developer for developing the photoresist.

8. The method according to claim 7, wherein the filler comprises a polymer.

10. The method according to claim 9, wherein the third barrier layer is formed through spacer process.

11. The method according to claim 1, wherein the conductive material layer is patterned to form the conductive structure and a dummy structure, so that a minimum gap between the conductive structures, a minimum gap between the conductive structure and the dummy conductive structure, and a minimum gap between the dummy conductive structures are kept substantially consistent with one another.

13. The semiconductor device according to claim 12, wherein there is an interface between the electrical isolation layer and an interlayer dielectric layer in the first area.

14. The semiconductor device according to claim 12, wherein at least a part of the interfaces at different heights are substantially coplanar.

15. The semiconductor device according to claim 12, wherein the interconnection structure comprises a dummy conductive structure, a minimum gap between the conductive structures, a minimum gap between the conductive structure and the dummy conductive structure and a minimum gap between the dummy conductive structures in a same layer are kept substantially consistent with one another in the layer.

16. An electronic apparatus, comprising the semiconductor device according to claim 12.

17. The electronic apparatus according to claim 16, wherein the electronic apparatus comprises a smart phone, a personal computer, a tablet, an artificial intelligence apparatus, a wearable apparatus or a mobile power supply.