Electronic device with 2-dimensional electron gas between polar-oriented rare-earth oxide layer grown over a semiconductor

2. The layered structure of claim 1, wherein the orientation of the III-N layer is non-polar.

3. The layered structure of claim 1, wherein the orientation of the III-N layer is semi-polar.

6. The layered structure of claim 1, wherein the polar rare-earth oxide layer has at least a first portion of electrons that diffuse to an interface between the polar rare-earth oxide layer and the III-N layer or are transferred to the III-N layer to form an n-type 2-dimensional electron gas (2DEG) on the III-N layer.

7. The layered structure of claim 6, wherein the III-N layer and the polar rare-earth oxide layer are selected to yield a conduction band offset between the III-N layer and the polar rare-earth oxide layer that is sufficient for electrons to diffuse from the polar rare-earth oxide layer into the III-N layer.

10. The layered structure of claim 1, wherein the III-N layer comprises gallium nitride.

12. The semiconductor device of claim 11, wherein the gate terminal comprises a rare-earth silicide or an epitaxial metal element.

16. The semiconductor device of claim 15, wherein the first region of the epi-twist rare-earth oxide layer and the second region of the epi-twist rare-earth oxide layer are discontinuous.

20. The layered structure of claim 19, wherein the orientation of the RE-N layer is non-polar.

21. The layered structure of claim 19, wherein the orientation of the RE-N layer is semi-polar.

24. The layered structure of claim 19, wherein the polar rare-earth oxide layer has at least a first portion of electrons that diffuse to an interface between the polar rare-earth oxide layer and the RE-N layer or are transferred to the RE-N layer to form an n-type 2-dimensional electron gas (DEG) on the RE-N layer.

25. The layered structure of claim 24, wherein the RE-N layer and the polar rare-earth oxide layer are selected to yield a conduction band offset between the RE-N layer and the polar rare-earth oxide layer that is sufficient for electrons to diffuse from the polar rare-earth oxide layer into the RE-N layer.