Miniature field plate T-gate and method of fabricating the same

2. The transistor of claim 1 further comprising ohmic contacts.

3. The transistor of claim 1 wherein the substrate comprises GaN, sapphire, silicon carbide (SiC), silicon (Si), GaAs, InP, or InSb.

4. The transistor of claim 1 wherein the epitaxy layer comprises an AlGaN barrier layer.

5. The transistor of claim 1 wherein the transistor comprises a high electron mobility transistor.

9. The transistor of claim 1 wherein the dielectric passivation layer has a thickness of 5 nanometers to 75 nanometers.

10. The transistor of claim 1 wherein the gate foot has a width of 40 nanometers or less.