Modified distribution of memory device states

4. The device of claim 3, wherein the log data comprises at least the plurality of values randomized based on the equal distribution probability and the first portion and second portion of the plurality of values.

5. The device of claim 1, wherein the high read frequency is determined based at least in part on a usage pattern of a host device.

6. The device of claim 1, wherein the determining the second probability is configured to select fewer states within a first group of the second plurality of states.

7. The device of claim 1, wherein the second plurality of states corresponds to groupings of an increasing range of voltage threshold range within the second portion of the plurality of memory devices.

8. The device of claim 7, wherein each grouping of the increasing voltage threshold range corresponds to a particular state.

9. The device of claim 8, wherein the second portion of the plurality of memory device states selected for grouping comprises memory device states that are affected by one or more negative effects.

10. The device of claim 9, wherein the grouping of the second portion of the plurality of memory states can be configured based on a desired reduction of one or more negative effects.

11. The device of claim 10, wherein the one or more negative effects include read disturb, program disturb, or data retention errors.

13. The method of claim 12, further comprising generating log data configured to facilitate a translation from the stored first portion and second portion of the plurality of values back to the host data.

14. The method of claim 13, further comprising, prior to determining the first probability and the second probability, randomizing the plurality of values based on an equal distribution probability.

15. The method of claim 14, wherein the log data comprises at least the plurality of values randomized based on the equal distribution probability and the first portion and second portion of the plurality of values.

16. The method of claim 12, wherein the high read frequency is determined based at least in part on a usage pattern of a host device.

17. The method of claim 12, wherein the determining the second probability is configured to select fewer states within a first group of the second plurality of states.

18. The method of claim 1, wherein the second plurality of states corresponds to groupings of an increasing range of voltage threshold range within the second portion of the plurality of memory devices, and wherein each grouping of the increasing voltage threshold range corresponds to a particular state.

19. The method of claim 18, wherein the second portion of the plurality of memory device states selected for grouping comprises memory device states that are affected by one or more negative effects, and wherein the grouping of the second portion of the plurality of memory states can be configured based on a desired reduction of one or more negative effects including read disturb, program disturb, or data retention errors.