Photoelectric conversion device and X-ray imaging device

2. The photoelectric conversion device according to claim 1, wherein the first terminal is disposed on the insulating layer in the second region.

3. The photoelectric conversion device according to claim 1, wherein the first terminal overlaps the second transistor in a plan view.

4. The photoelectric conversion device according to claim 1, wherein the first terminal is electrically connected to a gate of the first transistor, and a gate of the second transistor is electrically floating.

5. The photoelectric conversion device according to claim 1, wherein the first terminal is electrically connected to a source or a drain of the first transistor.

6. The photoelectric conversion device according to claim 1, wherein the second region surrounds the first region.

12. The photoelectric conversion device according to claim 1, wherein the first photoelectric conversion element includes an n-type semiconductor layer, a p-type semiconductor layer, and an i-type semiconductor layer disposed between the n-type semiconductor layer and the p-type semiconductor layer.

13. The photoelectric conversion device according to claim 12, wherein the n-type semiconductor layer is disposed on the i-type semiconductor layer, and the i-type semiconductor layer is disposed on the p-type semiconductor layer.

14. The photoelectric conversion device according to claim 12, wherein the p-type semiconductor layer is disposed on the i-type semiconductor layer, and the i-type semiconductor layer is disposed on the n-type semiconductor layer.

15. The photoelectric conversion device according to claim 12, wherein the first transistor is an oxide semiconductor TFT (thin film transistor) that includes an oxide semiconductor layer and a gate electrode disposed on the oxide semiconductor layer with a gate insulating film interposed therebetween.

16. The photoelectric conversion device according to claim 15, wherein the oxide semiconductor layer contains an In—Ga—Zn—O semiconductor.

18. The X-ray imaging device according to claim 17, wherein the scintillation light is converted into charges in the first region, and a voltage corresponding to the charges is output to outside through the first terminal.