Semiconductor device including magnetic tunnel junction structure

2. The semiconductor device according to claim 1, wherein the second metal interconnection is elongated in the first horizontal direction, and the third metal interconnection and the fourth metal interconnection are elongated in a second horizontal direction, respectively, and the second horizontal direction is parallel to the top surface of the substrate.

3. The semiconductor device according to claim 2, wherein the first horizontal direction and the second horizontal direction are orthogonal.

5. The semiconductor device according to claim 4, wherein a bottom surface of the first metal interconnection, a bottom surface of the fifth metal interconnection, and a bottom surface of the sixth metal interconnection are coplanar.

6. The semiconductor device according to claim 4, wherein a top surface of the first metal interconnection is lower than a top surface of the fifth metal interconnection and a top surface of the sixth metal interconnection in a thickness direction of the substrate.

7. The semiconductor device according to claim 4, wherein the material composition of the first metal interconnection is identical to a material composition of the fifth metal interconnection and a material composition of the sixth metal interconnection.

11. The semiconductor device according to claim 10, wherein the first horizontal direction and the second horizontal direction are orthogonal.

12. The semiconductor device according to claim 10, wherein a material composition of the second metal interconnection, a material composition of the third metal interconnection, and a material composition of the fourth metal interconnection are identical to one another.

14. The semiconductor device according to claim 13, wherein a bottom surface of the first metal interconnection, a bottom surface of the fifth metal interconnection, and a bottom surface of the sixth metal interconnection are coplanar.

15. The semiconductor device according to claim 13, wherein a top surface of the first metal interconnection is lower than a top surface of the fifth metal interconnection and a top surface of the sixth metal interconnection in a thickness direction of the substrate.

16. The semiconductor device according to claim 13, wherein a material composition of the first metal interconnection, a material composition of the fifth metal interconnection, and a material composition of the sixth metal interconnection are identical to one another.

19. The semiconductor device according to claim 10, wherein a material composition of the second metal interconnection is different from a material composition of the first metal interconnection, and a bottom width of the second metal interconnection is greater than a top width of the first metal interconnection.