Legal claims defining the scope of protection, as filed with the USPTO.
2. The method of claim 1, wherein a thermal gradient between the first end and the bulk material of the boule assists the one or more semiconductor substrates with separating from the boule at the damage layer in the first end of the boule.
3. The method of claim 1, wherein the damage layer is created through laser irradiation.
4. The method of claim 1, further comprising creating a second damage layer in a second end of the boule.
5. The method of claim 4, wherein a thermal gradient between the second end and the bulk material of the boule assists the one or more semiconductor substrates with separating from the boule at the damage layer in the second end of the boule.
6. The method of claim 1, wherein cooling the boule further comprises contacting the boule with liquid nitrogen.
7. The method of claim 1, wherein heating the boule comprises using a furnace or heated bath.
9. The method of claim 8, wherein a thermal gradient between the first end and a bulk material of the boule assists the one or more semiconductor substrates with separating from the boule at the damage layer in the first end of the boule.
10. The method of claim 8, wherein the damage layer is created through laser irradiation.
11. The method of claim 8, further comprising creating a second damage layer in a second end of the boule.
12. The method of claim 11, wherein a thermal gradient between the second end and a bulk material of the boule assists the one or more semiconductor substrates with separating from the boule at the damage layer in the second end of the boule.
13. The method of claim 8, wherein cooling the boule further comprises contacting the boule with liquid nitrogen.
14. The method of claim 8, wherein heating the boule comprises using a furnace or heated bath.
16. The method of claim 15, wherein heating the boule comprises using a furnace or heated bath.
17. The method of claim 15, wherein cooling the boule further comprises contacting the boule with liquid nitrogen.
18. The method of claim 15, wherein the thermal gradient between the second end and a bulk material of the boule assists a silicon carbide wafer with separating from the boule at the damage layer in the second end of the boule.
19. The method of claim 15, wherein the thermal gradient between the first end and the bulk material of the boule assists a silicon carbide wafer with separating from the boule at the damage layer in the first end of the boule.
20. The method of claim 1, wherein the damage layer is created from a source different from a source used to heat the bulk material of the boule.
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November 28, 2023
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