Multi-element ferroelectric gain memory bit-cell having stacked and folded planar capacitors with lateral offset

2. The apparatus of claim 1, wherein the metal layer is a shared bottom electrode for the plurality of capacitors.

3. The apparatus of claim 1, wherein the plurality of capacitors is staggered in rows.

4. The apparatus of claim 1, wherein the second terminal of the individual capacitor of the plurality of capacitors is coupled to the individual plate-line via an individual switch.

5. The apparatus of claim 1 comprises a plurality of switches connected to the plurality of capacitors, wherein the plurality of switches is connected to a plurality of plate-lines, and wherein the individual plate-line is among the plurality of plate-lines.

6. The apparatus of claim 1, wherein the metal layer comprises metal, a first conducting oxide, or a combination of a second conducting oxide and an insulative material.

7. The apparatus of claim 1, wherein the individual capacitor includes a top electrode which is coupled to the individual plate-line.

8. The apparatus of claim 7, wherein the top electrode is coupled to the individual plate-line via a pedestal.

11. The apparatus of claim 1, wherein the individual plate-line is parallel to the bit-line.

12. The apparatus of claim 1, wherein the plurality of capacitors comprises non-linear polar material.

14. The apparatus of claim 13, wherein the offset is substantially equal to a first lateral length of the first capacitor, or wherein the offset is less than a second lateral length of the first capacitor such that the first region overlaps with the second region.

15. The apparatus of claim 13, wherein the storage node extends vertically using vias and metal layers, wherein the storage node is a point of fold in the stacked and folded configuration, and wherein the first region is below the second region.

16. The apparatus of claim 15, wherein the plurality of capacitors has N capacitors are divided in L number of stacked layers such that there are N/L capacitors in an individual stacked layer, and wherein the N/L capacitors are shorted together with an electrode.

17. The apparatus of claim 16, wherein the electrode comprises metal, a first conducting oxide, or a combination of a second conducting oxide and an insulative material, and wherein the electrode is a shared bottom electrode that extends on either side of the point of the fold.

18. The apparatus of claim 13, wherein the individual capacitor includes a top electrode which is coupled to the individual plate-line.

19. The apparatus of claim 18, wherein the top electrode is coupled to the individual plate-line using a pedestal.

21. The apparatus of claim 20, wherein the first region is below the second region.

23. The apparatus of claim 22, wherein the top electrode is coupled to the individual plate-line via a pedestal.

24. The apparatus of claim 23, wherein the plurality of capacitors is staggered in rows.