The present disclosure discloses a silicon-based nanowire, a preparation method thereof, and a thin film transistor. By using a eutectic point of catalyst particles and silicon, and a driving factor that the Gibbs free energy of amorphous silicon is greater than that of crystalline silicon, and due to absorption of the amorphous silicon by the molten catalyst particles to form a supersaturated silicon eutectoid, the silicon nucleates and grows into silicon-based nanowires. Moreover, during the growth of the silicon-based nanowire, the amorphous silicon film grows linearly along guide slots under the action of the catalyst particles, and reverse growth of the silicon-based nanowire is restricted by the retaining walls, thus obtaining silicon-based nanowires with a high density and high uniformity. Furthermore, by controlling the size of the catalyst particles and the thickness of the amorphous silicon film, the width of the silicon-based nanowire may also be controlled.
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9. The method of claim 8, wherein a width of a catalyst line is in a range from 50 nm to 1000 nm.
11. The method of claim 1, wherein a material of the catalyst particles is indium, tin, nickel, or indium oxide.
12. The method of claim 1, wherein heights of the guide walls and heights of the retaining walls are greater than or equal to particle diameters of the catalyst particles.
13. The method of claim 1, wherein particle diameters of the catalyst particles are in a range from 1 nm to 5000 nm.
14. The method of claim 1, wherein heights of the guide walls are in a range from 5 nm to 5000 nm, and heights of the retaining walls are in a range from 5 nm to 5000 nm.
17. The method of claim 16, wherein within an area defined by the retaining walls and the guide walls, the catalyst particles are in contact with a same retaining wall, and at least part of the catalyst particles is in contact with at least one guide wall.
18. The method of claim 1, wherein within each area defined by the retaining walls and the guide walls, one or more of the catalyst particles are formed.
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March 25, 2020
January 2, 2024
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