Methods/structures of forming embedded inductor structures are described. Embodiments include forming a first interconnect structure on a dielectric material of a substrate, selectively forming a magnetic material on a surface of the first interconnect structure, forming an opening in the magnetic material, and forming a second interconnect structure in the opening. Build up layers are then formed on the magnetic material.
Legal claims defining the scope of protection, as filed with the USPTO.
5. The method of forming the microelectronic package structure of claim 4, wherein forming the magnetic material comprises forming a magnetic film.
6. The method of forming the microelectronic package structure of claim 1, wherein forming the first interconnect structure comprises forming a conductive pad, and wherein forming the second interconnect structure comprises forming a via.
7. The method of forming the microelectronic package of claim 1 wherein the magnetic material comprises one or more of nickel, iron or silicon, and alloys thereof.
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January 3, 2022
January 2, 2024
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