Apparatuses and methods for controlling hydrogen supply in manufacturing memory devices are described. An example apparatus includes: a first capacitor disposed above a substrate; a hydrogen supply film above the first capacitor; a second capacitor above the hydrogen supply film; and a barrier film between the hydrogen supply film and the second capacitor. The hydrogen supply film provides hydrogen and/or hydrogen ions. The barrier film is hydrogen-impermeable.
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3. The apparatus of claim 2 wherein the hydrogen barrier film includes at least one of at least one of aluminum oxide (Al2O3), aluminum oxynitride (AlON) or silicon nitride (Si3N4) disposed by atomic layer deposition (ALD).
4. The apparatus of claim 2, wherein the hydrogen supply film comprises at least one of higher concentration of Si—H bonds, a low concentration of N—H bonds, or a high Si/N composition.
5. The apparatus of claim 4, wherein the hydrogen supply film includes a passivation plasma enhanced chemical vapor deposition (PECVD) nitride film.
6. The apparatus of claim 2 wherein the MIM compensation capacitor comprises a film comprising a material that has a dielectric constant greater than a dielectric constant of silicon dioxide.
10. The apparatus of claim 1, wherein the hydrogen supply film provides the hydrogen and/or hydrogen ions during a thermal process to treat the first capacitor at a lower temperature than a temperature for forming the FEOL.
11. The apparatus of claim 10, wherein the hydrogen barrier film prevents the hydrogen and/or hydrogen ions from reaching the second capacitor during the thermal process.
13. The apparatus of claim 8, wherein the hydrogen supply film is above the at least one interconnect.
14. The apparatus of claim 8, wherein the hydrogen supply film is below the at least one interconnect.
15. The apparatus of claim 8 wherein the hydrogen supply film is below the insulating film.
16. The apparatus of claim 15, wherein the barrier film is between the hydrogen supply film and the insulating film.
17. The apparatus of claim 8, wherein the barrier film is above the insulating film.
18. The apparatus of claim 17, wherein the hydrogen supply film is between the insulating film and the barrier film.
19. The apparatus of claim 8, wherein the insulating film includes a material that has a dielectric constant less than a dielectric constant of silicon dioxide.
20. The apparatus of claim 19, wherein the insulating film comprises at least one of carbon-doped silicon oxide (SiOC) or nitrogen-doped silicon carbide (SiCN).
21. The apparatus of claim 8, wherein the second capacitor is above the insulating film.
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July 2, 2021
January 2, 2024
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