Devices and techniques for improving memory access operations of a memory device are provided. In an example, a method can include loading multiple LBA-to-physical address (L2P) regions of an L2P table from memory arrays of the memory device to a mapping cache in response to determining the LBA of the memory access command is not within the L2P region including of a mapping cache. When the memory access command is a sequential command, the multiple L2P regions loaded to the mapping cache can provide improved memory access performance.
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3. The method of claim 2, including, after receiving the second memory access command, executing the second memory access command without first transferring a further region of the L2P table from the memory array to the L2P cache.
4. The method of claim 1, wherein determining the first memory access command is a sequential read command further comprises determining that multiple immediately prior memory access commands were exclusively read commands.
5. The method of claim 1, wherein determining the first memory access command is a sequential read command further comprises determining the first memory access command is a read command with a data chunk size equal to a maximum data chunk size.
6. The method of claim 1, wherein determining the first memory access command is a sequential read command further comprises determining that a sum of a starting LBA of an immediately prior read command and a data chunk size of the immediately prior read command extend to a starting LBA of the first memory access command.
7. The method of claim 1, the memory device is a flash memory device and the memory array is a flash memory array, and wherein an L2P region of the L2P table is configured to map more than 1,000 LBAs to a corresponding physical address of the flash memory array.
8. The method of claim 1, wherein the loading multiple L2P regions includes loading at least three L2P regions of the L2P table from the memory to the memory L2P cache.
9. The method of claim 1, wherein determining that the first memory access command is a sequential read access comprises determining whether an LBA of an immediately preceding read command plus a data chunk size of the immediately preceding read command equals the LBA of the first memory access command.
12. The memory device of claim 11, wherein the operations include, after receiving the second memory access command, executing the second memory access command without first transferring a further portion of the L2P table from the memory array to the L2P cache.
13. The memory device of claim 10, wherein determining that the first memory access command is a sequential read command includes determining multiple immediately prior memory access commands were exclusively read commands.
14. The memory device of claim 10, wherein determining the first memory access command is a sequential read command includes determining that the first memory access command is a read command with a read data length equal to a maximum read data length.
15. The memory device of claim 10, wherein determining the first memory access command is a sequential read command includes determining a sum of a starting LBA from an immediately prior read command and a read data length of the immediately prior read command extends to a starting LBA of the first memory access command.
16. The memory device of claim 10, wherein the memory device is a flash memory device and the memory array is a flash memory array, and wherein an L2P region of the L2P table is configured to map more than 1,000 LBAs to a corresponding physical address of the flash memory array.
17. The memory device of claim 10, wherein the operation of loading multiple L2P regions includes loading at least three L2P regions of the L2P table from the memory array to the L2P cache.
18. The memory device of claim 10, wherein determining that the first memory access command is a sequential read access comprises determining whether an LBA of an immediately preceding read command plus a data chunk size of the immediately preceding read command equals the LBA of the first memory access command.
19. The memory device of claim 10, wherein determining that the first memory access command is a sequential read access comprises determining that a selected number of immediately preceding memory access commands were read commands.
20. The memory device of claim 10, wherein executing the first memory access command based on the first physical address, comprises sending multiple read commands to the memory array in batch.
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September 21, 2020
January 9, 2024
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