A method of forming a semiconductor structure and the semiconductor structure are provided. The method includes the following operations. A semiconductor substrate is provided, in which a plurality of isolation grooves distributed at intervals are provided in the semiconductor substrate, and each of the isolation grooves includes a top region isolation groove and a bottom region isolation groove. A first protective layer covering the side wall of the top region isolation groove and the top of the semiconductor substrate is formed. Oxidation treatment is performed on the bottom region isolation groove to oxidize a part of the semiconductor substrate close to the bottom region isolation groove to form a second substrate isolation layer. A dielectric layer filling the isolation groove is formed. The first protective layer and the dielectric layer higher than the top of the semiconductor substrate are etched to form an isolation structure.
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3. The method of forming the semiconductor structure of claim 1, wherein the treating comprises ion implantation, and an implanted ion at least comprises one of phosphorus, arsenic, boron, boron fluoride or carbon.
4. The method of forming the semiconductor structure of claim 3, wherein the ion implantation is performed in a tilted implantation manner, and a tilt angle ranges from 15° to 20°.
6. The method of forming the semiconductor structure of claim 5, wherein a process temperature used in the oxidation treatment ranges from 750° C. to 1000° C.
9. The method of forming the semiconductor structure of claim 8, wherein a thickness of the barrier layer formed ranges from 30 angstroms to 70 angstroms.
10. The method of forming the semiconductor structure of claim 1, wherein in a direction perpendicular to a top surface of the semiconductor substrate, a thickness of the top region isolation groove is less than a thickness of the bottom region isolation groove, and the thickness of the top region isolation groove is greater than ½ of the thickness of the bottom region isolation groove.
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July 27, 2021
January 9, 2024
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