The present disclosure relates to an imaging element and an electronic apparatus configured to achieve higher-resolution image taking. The imaging element includes: a photoelectric conversion portion provided in a semiconductor substrate for each pixel that performs photoelectric conversion on light that enters through a filter layer; an element isolation portion configured to separate the photoelectric conversion portions of adjacent pixels; and an inter-pixel light shielding portion disposed between the pixels in a layer and provided between the semiconductor substrate and the filter layer and separated from a light receiving surface of the semiconductor substrate by a predetermined interval. Moreover, an interval between the light receiving surface of the semiconductor substrate and a tip end surface of the inter-pixel light shielding portion is smaller than a width of the tip end surface of the inter-pixel light shielding portion. The present technology is applicable to back-illuminated CMOS image sensors, for example.
Legal claims defining the scope of protection, as filed with the USPTO.
4. The light detecting device according to claim 3, wherein the light shielding portion is at least partially disposed in the first insulation layer.
5. The light detecting device according to claim 3, wherein a material of the first insulation layer is different from a material of the second insulation layer.
6. The light detecting device according to claim 1, wherein the first separation region includes a trench that passes through the semiconductor substrate.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
February 28, 2022
January 9, 2024
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