A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.
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4. The semiconductor device according to claim 3, wherein the low-density region has a size in the order of several nanometers.
A semiconductor device includes a substrate with a high-density region and a low-density region of semiconductor material. The low-density region is formed by removing portions of the semiconductor material, creating a porous structure. This porous structure has a size in the order of several nanometers, which enhances the device's performance by improving charge carrier mobility or reducing parasitic capacitance. The high-density region remains intact, providing structural support and electrical connectivity. The porous low-density region can be used in transistors, memory cells, or sensors to optimize electrical properties. The nanometer-scale dimensions of the low-density region enable precise control over device characteristics, such as threshold voltage or leakage current, while maintaining mechanical stability. The device may also include insulating layers or conductive contacts to integrate the porous structure into larger circuits. This design addresses challenges in semiconductor miniaturization, such as maintaining performance at advanced technology nodes while reducing power consumption and improving reliability.
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October 12, 2022
March 19, 2024
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