Embodiments of systems and methods for dicing a bonded structure are provided. A method for dicing a bonded structure includes thinning a top surface and a bottom surface of a bonded structure. The bonded structure may have a first wafer and a second wafer bonded with a bonding interface. The method may also include forming a series of ablation structures in the first wafer and the second wafer. The series of ablation structures may be between a first part and a second part of the bonded structure. The method may also include separating the first part and the second part of the bonded structure along the series of ablation structures.
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
3. The method of claim 2, wherein determining the relative positions between the series of ablation structures and the bonding interface comprises determining a first cutting level in the first wafer and a second cutting level in the second wafer of the bonded structure, the first cutting level being a level away from the bonding interface into the first wafer by a first cutting depth along a vertical direction, and the second cutting level being a distance away from the bonding interface into the second wafer by a second cutting depth along the vertical direction.
A method for dicing a bonded structure involves thinning its top and bottom surfaces (where it consists of a first wafer and a second wafer joined by a bonding interface), forming a series of laser ablation structures within both wafers between intended parts, and then separating these parts along the ablation structures. A key step is determining the precise relative positions between these ablation structures and the bonding interface. This determination is achieved by defining a first cutting level within the first wafer and a second cutting level within the second wafer. The first cutting level is positioned at a specific first cutting depth vertically away from the bonding interface into the first wafer, and similarly, the second cutting level is positioned at a specific second cutting depth vertically away from the bonding interface into the second wafer.
6. The method of claim 5, wherein converging the laser beam at the first focal plane and at the second focal plane comprises adjusting an arrangement of an optical module to respectively form a series of focused laser spots on the first focal plane and on the second focal plane.
A method for dicing a bonded structure involves thinning its top and bottom surfaces (where it consists of a first wafer and a second wafer joined by a bonding interface), forming a series of laser ablation structures within both wafers between intended parts, and then separating these parts along the ablation structures. When forming these ablation structures, a laser beam is converged at a first focal plane and a second focal plane. This laser beam convergence is achieved by adjusting the configuration of an optical module, specifically to form a series of distinct focused laser spots on both the first and second focal planes, thereby precisely creating the ablation structures.
10. The method of claim 1, wherein separating the first part and the second part of the bonded structure comprises applying a lateral force on at least one of the first part or the second part of the bonded structure.
A method for dicing a bonded structure involves thinning its top and bottom surfaces (where it consists of a first wafer and a second wafer joined by a bonding interface), forming a series of laser ablation structures within both wafers between intended parts, and then separating these parts along the ablation structures. This separation of the first and second parts is specifically achieved by applying a lateral (sideways) force to at least one of these parts of the bonded structure, causing them to break apart cleanly along the pre-formed ablation structures.
13. The method of claim 1, wherein a first distance from the bonding interface to the first ablation spot is identical to a second distance from the bonding interface to the second ablation spot.
A method for dicing a bonded structure involves thinning its top and bottom surfaces (where it consists of a first wafer and a second wafer joined by a bonding interface), forming a series of laser ablation structures within both wafers between intended parts, and then separating these parts along the ablation structures. When forming these ablation structures, the first ablation spot is positioned such that its distance from the bonding interface is identical to the distance of the second ablation spot from the bonding interface, ensuring symmetrical placement of the ablation features relative to the joint between the wafers.
14. The method of claim 13, wherein the first distance, equal to the second distance, is within an arrange of about 20 μm to about 40 μm.
A method for dicing a bonded structure involves thinning its top and bottom surfaces (where it consists of a first wafer and a second wafer joined by a bonding interface), forming a series of laser ablation structures within both wafers between intended parts, and then separating these parts along the ablation structures. When forming these ablation structures, a first ablation spot is positioned such that its distance from the bonding interface is identical to the distance of a second ablation spot from the bonding interface. This identical distance for both the first and second ablation spots from the bonding interface is specifically set to be within a range of approximately 20 micrometers to 40 micrometers.
15. The method of claim 1, wherein a first length from a first end of the vertical ablation stripe to the bonding interface is identical to a second length from a second end of the vertical ablation stripe to the bonding interface, the first end and the second end being arranged at two opposite sides of the bonding interface.
A method for dicing a bonded structure involves thinning its top and bottom surfaces (where it consists of a first wafer and a second wafer joined by a bonding interface), forming a series of laser ablation structures, which include vertical ablation stripes, within both wafers between intended parts, and then separating these parts along the ablation structures. For each vertical ablation stripe, the length from its first end to the bonding interface is identical to the length from its second end to the bonding interface, with these first and second ends being positioned on opposite sides of the bonding interface. This ensures the ablation stripe is symmetrically centered across the bonding interface.
19. The method of claim 18, wherein the third ablation spots and the fourth ablation spots are on a one-to-one relationship along a vertical line perpendicular to the bonding interface.
A method for dicing a bonded structure involves thinning its top and bottom surfaces (where it consists of a first wafer and a second wafer joined by a bonding interface), forming a series of laser ablation structures within both wafers between intended parts, and then separating these parts along the ablation structures. Specifically, the formation of these ablation structures includes creating both third ablation spots and fourth ablation spots. These third and fourth ablation spots are arranged in a one-to-one correspondence along a vertical line that is perpendicular to the bonding interface, meaning each third spot has a corresponding fourth spot directly above or below it.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
September 28, 2021
March 26, 2024
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.