A semiconductor device includes a first gate structure extending along a first lateral direction. The semiconductor device includes a first interconnect structure, disposed above the first gate structure, that extends along a second lateral direction perpendicular to the first lateral direction. The first interconnect structure includes a first portion and a second portion electrically isolated from each other by a first dielectric structure. The semiconductor device includes a second interconnect structure, disposed between the first gate structure and the first interconnect structure, that electrically couples the first gate structure to the first portion of the first interconnect structure. The second interconnect structure includes a recessed portion that is substantially aligned with the first gate structure and the dielectric structure along a vertical direction.
Legal claims defining the scope of protection. Each claim is shown in both the original legal language and a plain English translation.
2. The semiconductor device of claim 1, wherein the recessed portion of the second interconnect structure is directly connected to the first gate structure, and wherein the second interconnect structure further includes a non-recessed portion that is directly connected to the first portion of the first interconnect structure.
The semiconductor device relates to advanced integrated circuit (IC) interconnect structures, specifically addressing challenges in connecting gate structures to interconnect layers while minimizing resistance and improving reliability. The device includes a first interconnect structure with a first portion and a second interconnect structure with a recessed portion and a non-recessed portion. The recessed portion of the second interconnect structure is directly connected to a first gate structure, enabling a low-resistance electrical path between the gate and the interconnect. The non-recessed portion of the second interconnect structure is directly connected to the first portion of the first interconnect structure, facilitating signal routing while maintaining structural integrity. This configuration ensures efficient current flow and reduces contact resistance, which is critical for high-performance semiconductor devices. The design also helps mitigate electromigration and mechanical stress, improving long-term reliability. The interconnect structures are typically formed using conductive materials such as copper or tungsten, with dielectric layers providing insulation. The recessed portion may be formed through etching or chemical-mechanical planarization (CMP) processes, while the non-recessed portion remains at a standard interconnect level. This approach optimizes signal integrity and power delivery in densely packed IC designs.
5. The semiconductor device of claim 4, wherein the second interconnect structure and the third interconnect structure are disposed in the same interconnect layer.
A semiconductor device includes multiple interconnect structures formed within an interconnect layer of a semiconductor substrate. The device comprises a first interconnect structure, a second interconnect structure, and a third interconnect structure, all embedded within the same interconnect layer. The second and third interconnect structures are positioned in such a way that they are aligned with a first conductive feature and a second conductive feature, respectively, which are located in an underlying layer. The first interconnect structure is electrically connected to the first conductive feature, while the second and third interconnect structures are electrically connected to the second conductive feature. This configuration allows for efficient signal routing and reduced parasitic capacitance within the semiconductor device. The arrangement of the interconnect structures in the same layer minimizes manufacturing complexity while ensuring reliable electrical connections between different layers of the device. The device is particularly useful in integrated circuits where precise signal routing and low-power operation are critical.
6. The semiconductor device of claim 4, wherein the first gate structure and the second gate structure are spaced apart from each other by a distance along the second lateral direction, and wherein a width by which at least the first portion or the second portion of the first interconnect structure is extended along the second lateral direction is equal to or greater than 1.5 times the distance.
This invention relates to semiconductor devices, specifically addressing challenges in interconnect design for advanced integrated circuits. The device includes a first gate structure and a second gate structure spaced apart along a lateral direction, with an interconnect structure connecting these gates. The interconnect structure has a first portion and a second portion, where at least one of these portions is extended along the lateral direction by a width that is at least 1.5 times the spacing distance between the gate structures. This design ensures reliable electrical connectivity while optimizing space efficiency in densely packed semiconductor layouts. The extended width of the interconnect structure compensates for potential misalignment or process variations, reducing resistance and improving signal integrity. The gate structures may be part of a transistor array or logic circuit, where precise interconnect dimensions are critical for performance. The invention aims to enhance manufacturability and reliability in semiconductor fabrication, particularly for devices with fine-pitch interconnects. The interconnect structure's extension ensures robust connections even under tight spacing constraints, addressing yield and performance challenges in modern semiconductor manufacturing.
7. The semiconductor device of claim 4, wherein the first gate structure and the second gate structure are adjacent ones of a number of gate structures that constitute a standard cell, the number being equal to or less than 5.
This invention relates to semiconductor devices, specifically standard cells used in integrated circuit design. The problem addressed is optimizing gate structure configurations within standard cells to improve performance, density, or manufacturability. The invention describes a semiconductor device with a standard cell containing a limited number of gate structures, specifically five or fewer. The standard cell includes at least two adjacent gate structures, referred to as the first and second gate structures. These gate structures are part of a larger set of gate structures within the standard cell, all of which are interconnected or arranged in a specific layout. The gate structures may be transistors or other active elements, and their adjacency and limited quantity help reduce layout complexity, improve signal routing, or enhance electrical characteristics. The design ensures compatibility with standard cell libraries while allowing for customization within the constraints of the specified gate count. This approach aims to balance performance, area efficiency, and design flexibility in semiconductor manufacturing.
8. The semiconductor device of claim 1, wherein the first interconnect structure is included in one of a number of signal tracks disposed in an interconnect layer, the number being equal to or less than 3.
The semiconductor device relates to integrated circuit interconnect structures, specifically addressing the challenge of optimizing signal routing in densely packed semiconductor designs. The device includes a first interconnect structure that is part of a limited number of signal tracks within an interconnect layer, with the number of tracks being three or fewer. This configuration reduces signal congestion and improves routing efficiency in high-density semiconductor layouts. The interconnect layer is designed to minimize signal interference and crosstalk by restricting the number of parallel signal paths. The first interconnect structure is positioned within this constrained track layout, ensuring controlled signal propagation and reduced electromagnetic coupling between adjacent tracks. The device may also include additional interconnect structures, such as vias or conductive lines, that facilitate vertical and horizontal signal transmission while adhering to the track limitations. The overall design enhances signal integrity and manufacturability by simplifying the interconnect layout while maintaining performance in advanced semiconductor technologies.
11. The semiconductor device of claim 10, wherein the recessed portion of the second interconnect structure is directly connected to the first gate structure.
A semiconductor device includes a first gate structure and a second gate structure formed over a substrate, with a first interconnect structure electrically connected to the first gate structure and a second interconnect structure electrically connected to the second gate structure. The second interconnect structure has a recessed portion that is directly connected to the first gate structure, enabling electrical coupling between the two gate structures. This configuration allows for improved signal routing and reduced parasitic capacitance in integrated circuits, particularly in advanced logic or memory devices where multiple gate structures must be interconnected efficiently. The recessed portion of the second interconnect structure may be formed using selective etching or deposition techniques to ensure precise alignment and reliable electrical contact with the first gate structure. The device may further include additional interconnect layers and dielectric materials to isolate and support the gate structures and interconnects. This design is particularly useful in high-density semiconductor applications where space optimization and signal integrity are critical.
12. The semiconductor device of claim 10, wherein the second interconnect structure further includes a non-recessed portion that is directly connected to the first portion of the first interconnect structure.
The semiconductor device relates to advanced interconnect structures in integrated circuits, addressing challenges in electrical connectivity and reliability between stacked conductive layers. The device includes a first interconnect structure with a first portion and a second interconnect structure with a non-recessed portion. The non-recessed portion of the second interconnect structure is directly connected to the first portion of the first interconnect structure, ensuring robust electrical contact. This configuration enhances signal integrity and reduces resistance in multi-layer interconnect systems, which is critical for high-performance semiconductor devices. The interconnect structures may be part of a larger system where the first interconnect structure is embedded within a dielectric layer, and the second interconnect structure extends through the dielectric layer to interface with the first portion. The direct connection between the non-recessed portion and the first portion eliminates the need for additional intermediate layers, simplifying the manufacturing process and improving yield. This design is particularly useful in advanced nodes where interconnect density and reliability are paramount. The semiconductor device may also include additional features such as barrier layers or liners to prevent diffusion and ensure long-term stability. The overall structure enables efficient signal transmission while maintaining mechanical integrity in densely packed semiconductor architectures.
13. The semiconductor device of claim 10, wherein the first source/drain structure, the second source/drain structure, and the non-recessed portion of the second interconnect structure are substantially aligned with one another along the vertical direction.
This invention relates to semiconductor devices, specifically addressing alignment challenges in advanced semiconductor manufacturing. The device includes a first source/drain structure, a second source/drain structure, and a second interconnect structure. The second interconnect structure has a non-recessed portion that remains at its original height, unlike recessed portions that may be etched down. The first and second source/drain structures are vertically aligned with this non-recessed portion, ensuring precise electrical connectivity. This alignment minimizes misalignment-induced resistance and improves device performance. The invention is particularly useful in finFET or gate-all-around transistor architectures where vertical stacking and precise alignment are critical. The non-recessed portion of the interconnect structure serves as a reference for aligning the source/drain structures, reducing manufacturing variability. This design enhances yield and reliability in high-density semiconductor devices.
14. The semiconductor device of claim 10, wherein the first transistor has a first conductive type, and the second transistor has a second conductive type opposite to the first conductive type.
A semiconductor device includes a first transistor and a second transistor, where the first transistor has a first conductive type (e.g., n-type) and the second transistor has a second conductive type (e.g., p-type) opposite to the first. The device is designed to address challenges in semiconductor integration, such as improving performance, reducing power consumption, or enhancing compatibility with complementary metal-oxide-semiconductor (CMOS) technology. The first and second transistors may be part of a larger circuit, such as an inverter, logic gate, or memory cell, where the opposite conductive types enable complementary operation. The transistors may be fabricated using various semiconductor materials, including silicon, silicon carbide, or gallium nitride, depending on the application. The device may also include additional components like interconnects, dielectric layers, or isolation structures to optimize electrical and thermal performance. The opposite conductive types allow for balanced current flow and efficient switching, which is critical for high-speed and low-power applications. The device may be used in integrated circuits for computing, communication, or power electronics.
15. The semiconductor device of claim 10, wherein each of the first gate structure and the second gate structure is one of a number of gate structures that constitute a standard cell, the number being equal to or less than 5.
The semiconductor device relates to integrated circuit design, specifically standard cells used in digital logic circuits. Standard cells are pre-designed logic gates or circuits that are repeated across a chip to optimize layout efficiency and performance. A common challenge in standard cell design is balancing gate density, performance, and power consumption, particularly when integrating multiple gate structures within a single cell. This semiconductor device includes a standard cell with a first gate structure and a second gate structure, where each gate structure is one of a limited number of gates in the cell. The number of gate structures in the cell is five or fewer, ensuring compactness while maintaining functionality. The first and second gate structures may be transistors, such as FinFETs or planar FETs, configured to perform logic operations like AND, OR, or NOT. The limited gate count helps reduce layout complexity, improve manufacturability, and minimize parasitic effects, which are critical for high-performance and low-power applications. The design may also include interconnects and routing channels to connect the gates to other cells in the integrated circuit. This approach optimizes space utilization and signal integrity, making it suitable for advanced semiconductor processes.
16. The semiconductor device of claim 10, wherein the first interconnect structure is included in one of a number of signal tracks disposed in an interconnect layer, the number being equal to or less than 3.
This invention relates to semiconductor devices with optimized interconnect structures for signal routing. The problem addressed is the need to reduce signal interference and improve signal integrity in integrated circuits by limiting the number of signal tracks in an interconnect layer. The semiconductor device includes a first interconnect structure that is part of a limited number of signal tracks in an interconnect layer. The number of signal tracks is constrained to be three or fewer, which helps minimize crosstalk and electromagnetic interference between signals. The interconnect layer may be part of a multi-layer interconnect system, where other layers can include additional signal tracks or power/ground lines. The first interconnect structure is designed to carry signals with reduced noise and distortion, improving overall circuit performance. The limited number of signal tracks ensures that signal paths are spaced sufficiently to prevent interference, while still allowing efficient routing of critical signals. This approach is particularly useful in high-density integrated circuits where signal integrity is critical, such as in high-speed digital or mixed-signal designs. The invention focuses on balancing signal routing efficiency with noise reduction in semiconductor interconnect layers.
18. The semiconductor device of claim 10, wherein the first transistor and second transistor collectively form a complementary field-effect transistor.
A semiconductor device includes a first transistor and a second transistor configured as a complementary field-effect transistor (CFET) pair. The CFET structure integrates both n-type and p-type transistors in a vertically stacked arrangement, sharing a common gate electrode. This design reduces the footprint of the device compared to traditional planar CMOS layouts, enabling higher transistor density and improved performance in integrated circuits. The CFET configuration allows for enhanced switching speed and lower power consumption by minimizing parasitic capacitance and resistance. The device is particularly useful in advanced logic circuits, such as microprocessors and memory chips, where space efficiency and performance are critical. The shared gate structure simplifies fabrication while maintaining precise control over transistor operation. The CFET pair may be integrated into a larger semiconductor circuit, where the complementary transistors work together to amplify or switch signals efficiently. This approach addresses the challenges of scaling conventional CMOS technology by leveraging vertical integration to overcome physical limitations of planar designs. The device is suitable for applications requiring high-speed processing and energy efficiency, such as mobile devices, data centers, and high-performance computing systems.
20. The semiconductor device of claim 19, wherein the first portion is shorter than the second portion, with respective bottom boundaries of the first and second portions substantially aligned with each other.
This invention relates to semiconductor devices, specifically addressing the structural design of semiconductor components to improve performance and reliability. The device includes a first portion and a second portion, where the first portion is shorter than the second portion. The bottom boundaries of both portions are substantially aligned, ensuring precise structural integration. This design may enhance electrical characteristics, such as current flow or signal propagation, by optimizing the geometric configuration of the semiconductor layers. The alignment of the bottom boundaries ensures consistent fabrication and reduces defects, improving device yield and reliability. The shorter first portion may facilitate specific functional requirements, such as reduced capacitance or improved heat dissipation, while the longer second portion maintains structural stability. This configuration is particularly useful in advanced semiconductor manufacturing processes where precise control over layer dimensions is critical. The invention may be applied in various semiconductor applications, including transistors, memory cells, or integrated circuits, where optimized structural design is essential for performance and efficiency.
Cooperative Patent Classification codes for this invention. Click any code to explore related patents in that topic.
June 8, 2022
March 26, 2024
Browse 5M+ US patents with plain-English claim translations and AI-generated analysis.